Fabrication process of superconducting integrated circuits with submicron Nb/AlO x /Nb junctions using electron-beam direct writing technique

1997 ◽  
Author(s):  
Masahiro Aoyagi ◽  
Hiroshi Nakagawa
Keyword(s):  
Electron Beam ◽  
Integrated Circuits ◽  
Fabrication Process ◽  
Direct Writing

Linewidth measurement using the low voltage SEM

1986 ◽  
Vol 44 ◽  
pp. 652-653
Author(s):  
M.G. Rosenfield
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Secondary Electron ◽  
Low Voltage ◽  
Fabrication Process ◽  
Critical Dimensions ◽  
Linewidth Measurement ◽  
Threshold Technique ◽  
Scanning Electron

Minimum feature sizes in experimental integrated circuits are approaching 0.5 μm and below. During the fabrication process it is usually necessary to be able to non-destructively measure the critical dimensions in resist and after the various process steps. This can be accomplished using the low voltage SEM. Submicron linewidth measurement is typically done by manually measuring the SEM micrographs. Since it is desirable to make as many measurements as possible in the shortest period of time, it is important that this technique be automated.Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary electron signal generated by that structure. Thus, it is important to understand how the actual dimension of the line being measured relates to the secondary electron signal. Since different features generate different signals, the same method of relating linewidth to signal cannot be used. For example, the peak to peak method may be used to accurately measure the linewidth of an isolated resist line; but, a threshold technique may be required for an isolated space in resist.

Direct-Writing of Cu Nano-Patterns with an Electron Beam

2015 ◽  
Vol 21 (6) ◽  
pp. 1639-1643 ◽  
Author(s):  
Shih-En Lai ◽  
Ying-Jhan Hong ◽  
Yu-Ting Chen ◽  
Yu-Ting Kang ◽  
Pin Chang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Exposure Time ◽  
Metal Ion ◽  
Reduction Rate ◽  
Industrial Applications ◽  
Growth Stages ◽  
Sample Holder ◽  
Direct Writing ◽  
Transmission Electron ◽  
Aqueous Layer

AbstractWe demonstrate direct electron beam writing of a nano-scale Cu pattern on a surface with a thin aqueous layer of CuSO4 solution. Electron beams are highly maneuverable down to nano-scales. Aqueous solutions facilitate a plentiful metal ion supply for practical industrial applications, which may require continued reliable writing of sophisticated patterns. A thin aqueous layer on a surface helps to confine the writing on the surface. For this demonstration, liquid sample holder (K-kit) for transmission electron microscope (TEM) was employed to form a sealed space in a TEM. The aqueous CuSO4 solution inside the sample holder was allowed to partially dry until a uniform thin layer was left on the surface. The electron beam thus reduced Cu ions in the solution to form the desired patterns. Furthermore, the influence of e-beam exposure time and CuSO4(aq) concentration on the Cu reduction was studied in this work. Two growth stages of Cu were shown in the plot of Cu thickness versus e-beam exposure time. The measured Cu reduction rate was found to be proportional to the CuSO4(aq) concentration.

scholarly journals Direct writing of CoFe alloy nanostructures by focused electron beam induced deposition from a heteronuclear precursor

2015 ◽  
Vol 26 (47) ◽  
pp. 475701 ◽  
Author(s):  
F Porrati ◽  
M Pohlit ◽  
J Müller ◽  
S Barth ◽  
F Biegger ◽  
...  
Keyword(s):  
Electron Beam ◽  
Direct Writing ◽  
Alloy Nanostructures ◽  
Electron Beam Induced Deposition

Planarized Nb 4-Layer Fabrication Process for Superconducting Integrated Circuits and Its Fabricated Device Evaluation

2021 ◽  
Author(s):  
Shuichi NAGASAWA ◽  
Masamitsu TANAKA ◽  
Naoki TAKEUCHI ◽  
Yuki YAMANASHI ◽  
Shigeyuki MIYAJIMA ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Fabrication Process

Development of single-layer positive resist process for electron beam direct writing technology

1995 ◽  
Vol 78 (8) ◽  
pp. 81-91 ◽  
Author(s):  
Hidenori Yamaguchi ◽  
Toshio Sakamizu ◽  
Fumio Murai ◽  
Hiroshi Shiraishi ◽  
Hajime Hayakawa ◽  
...  
Keyword(s):  
Electron Beam ◽  
Single Layer ◽  
Direct Writing ◽  
Writing Technology ◽  
Positive Resist
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