Air-Bridge Electron-Beam Lithography for Coplanar Millimeter Wave Circuits

1992 ◽  
Vol 260 ◽  
Author(s):  
William H. Haydl ◽  
R. J. Bojko ◽  
L. F. Eastman
Keyword(s):  
Electron Beam ◽  
Integrated Circuits ◽  
Millimeter Wave ◽  
Electron Beam Lithography ◽  
Ultrahigh Frequency ◽  
Turn Around Time ◽  
Low Capacitance ◽  
Beam Technique ◽  
Millimeter Wave Circuits

ABSTRACTIn the development of air bridges for low capacitance crossovers, resists of 3–6μm thickness a e needed, which calls for special alignment techniques. A technique has been developed for an air bridge tec nology, which is realized entirely by electron beam lithography. Such an all-electron-beam technique for sub-micron devices and ultrahigh frequency circuits, results in a fast turn-around-time in the development of integrated circuits.Gold plated air bridges with 20 to 120 pm span, 5–60 μm width, 2.6 pm height, and 2–4 μm thickness, were realized on GaAs and InP.

A Fundamental Study of the Electron Beam Lithography beyond Sub 100nm Process and its Application

2015 ◽  
Vol 1109 ◽  
pp. 617-625
Author(s):  
Shiro Nagaoka ◽  
Hideo Horibe ◽  
Jin Ping Ao ◽  
Seiichi Tagawa
Keyword(s):  
Electron Beam ◽  
Integrated Circuits ◽  
Electron Beam Lithography ◽  
Layer Structure ◽  
Design Rule ◽  
Process Conditions ◽  
Beam Diameter ◽  
Fundamental Study ◽  
Intrinsic Resolution ◽  
Gan Hfet

It is well known that electron beam lithography is one of the potential candidates to fulfill of the demand of the miniaturization of the design rule of semiconductor integrated circuits beyond sub 100nm size with high reproducibility. It is also a fact that the resolution is recognized to depend on the various factors which are oriented to the machine and process conditions, for example, electron beam diameter, the intensity distribution of the beam itself, the resistance properties polymers, the development conditions, etc. Therefore, it is thought that it is impossible to be derivable directly and unambiguously from the resist material itself. In this study, the intrinsic resolution of the resist polymer was discussed based on the hypothesis that the resolution itself may be able to improve to the same size as the size of an electron beam profile, or less. The bi-layer structure ZEP520A/poly methyl glutar imide (PMGI) was proposed and tested. As for the results achieved, the contrast γ was improved constantly with a reduction in the development time and a decrease in the development temperature. The highest γ value, approximately 18, was obtained during development at the-20°C condition. An approximately 70nm with high aspect ratio pattern which is almost the same size of the beam pattern was obtained. This result provides an understanding how the intrinsic resolution of the resist material should be, and can be applied to other lithography methods. This process was applied to the actual electrode pattern making process. An approximately 100nm width of Copper nanowire as the gate electrode for the AlGaN/GaN HFET was successfully demonstrated. In addition, AlGaN/GaN HFET operated at about 73.5GHz, successfully.

Fabrication limits of electron beam lithography and of UV, X -ray and ion-beam lithographies

1995 ◽  
Vol 353 (1703) ◽  
pp. 291-311 ◽  
Keyword(s):  
Electron Beam ◽  
Integrated Circuits ◽  
Ultraviolet Light ◽  
Electron Beam Lithography ◽  
Ion Beam ◽  
Future Generations ◽  
Exposure Rate ◽  
X Ray ◽  
Silicon Integrated Circuits ◽  
Electrons And Ions

The paper discusses and compares the lithography methods being developed for the fabrication of future generations of silicon integrated circuits. The smallest features in today’s circuits are about 0.3 μm in size and this will be reduced to 0.1 μm within the next ten years. The methods discussed include optical (ultraviolet light) projection, which is used predominantly at present, projection printing at wavelengths between the X-ray and ultraviolet regions, X-ray proximity printing, and scanning and projection with electrons and ions. There are severe problems to be overcome with all of the methods before they can satisfy future needs. The difficulties are not just connected with obtaining adequate resolution. The more challenging requirements are those associated with the elimination of distortion in the highly complex trillion pixel images and of achieving an exposure rate of about one per second with a system of acceptable cost, that is less than about $10M. The various approaches for correcting distortion and obtaining adequate throughput are described, as are the factors limiting resolution. Finally, the ultimate capabilities of electron beam methods for fabricating structures and devices with dimensions down to 1 nm are described.

Encrypted Electron Beam Lithography Nano-Signatures for Authentication

2017 ◽  
Vol 26 (03) ◽  
pp. 1740017 ◽  
Author(s):  
Kiarash Ahi ◽  
Abdiel Rivera ◽  
Mehdi Anwar
Keyword(s):  
Electron Beam ◽  
Supply Chain ◽  
Integrated Circuits ◽  
Electron Beam Lithography ◽  
Speckle Pattern ◽  
Global Supply Chain ◽  
Laser Speckle ◽  
Advanced Encryption Standard ◽  
Lookup Tables ◽  
Speckle Patterns

In this work, engineered nanostructures (ENS) have been fabricated on the packed integrated circuits. Coding lookup tables were developed to assign different digits in numerical matrices to different fabricated nano-signatures. The numerical matrices are encrypted according to advanced encryption standard (AES). The encrypted numerical matrix is ink printed on the components, and the nanosignatures are fabricated on the packaged of the chips via electron beam lithography (EBL). This process is to be done in the manufacturer side of the supply chain. The numerical matrix and the nanosignature accompany the product in its long journey in the global supply chain. The global supply chain is proved to be susceptible to counterfeiters. For keeping counterfeiters‘ hands out of the process, the cipher key and the coding lookup tables are provided to the consumer using a secure direct line between the authentic manufacturer and the consumer. In the consumer side, the printed numerical matrix is decrypted. Having the decrypted numerical matrix makes it possible to extract the nanosignature from the laser speckle pattern shined on the packaged product. In this work, an algorithm is developed to extract the nano-signature by having the decrypted matrix and reflected laser speckle patterns as inputs. Confirming the existence of the nano-signature confirms the authenticity of the component. Imitating the nano-signatures by the counterfeiters is not possible because there is no way for them to observe the shape of these signatures without having access to the cipher key.

TECHNOLOGIES FOR THE FABRICATION OF NANOSCALE SUPERCONDUCTING CIRCUITS

2005 ◽  
Vol 19 (09n10) ◽  
pp. 405-424 ◽  
Author(s):  
MICHIO WATANABE
Keyword(s):  
Electron Beam ◽  
Integrated Circuits ◽  
Electron Beam Lithography ◽  
Josephson Junctions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Superconducting Transition ◽  
Superconducting Circuits ◽  
Lift Off ◽  
Excellent Stability

Researches on the fabrication of ~ 0.1 × 0.1 μ m 2 superconductor–insulator–superconductor (SIS) Josephson junctions are reviewed. Today, a typical dimension is 1–10 μm for Josephson junctions in superconducting integrated circuits. These Josephson junctions are defined by well-established photolithographic technology with reactive ion etching (RIE), and for the superconductor, Nb is almost always used. The merits of Nb include the facts that the superconducting transition temperature Tc of Nb (9.2 K ) is higher than the boiling point of He (4.2 K ), and that Nb has excellent stability against thermal cycling between room temperature and liquid- He temperature. For the fabrication of ~ 0.1 × 0.1 μ m 2 junctions, on the other hand, there is a standard process with electron-beam lithography, shadow evaporation, and lift-off. This process works well for Al (Tc = 1.2 K ), however, it is not ideal for Nb . The scope of this brief review is the nanoscale junction with Nb electrodes. We will look at the efforts of optimizing the standard lift-off process for Nb , electron-beam-lithographic versions of the Nb Josephson-junction technology, focused-ion-beam (FIB) etching as a convenient alternative to electron-beam lithography and RIE, etc. In order to characterize nanoscale tunnel junctions, the single-charge transistor has been often fabricated. Therefore, a summary of its theoretical transport properties is also included.

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