Laser Photolysis And Ionization Of Polyatomic Molecules: Film Growth And Spectroscopic Diagnostics

1984 ◽  
Author(s):  
J G. Eden ◽  
J. F. Osmundsen ◽  
C C. Abele ◽  
D B. Geohegan
Keyword(s):  
Film Growth ◽  
Polyatomic Molecules ◽  
Laser Photolysis ◽  
Spectroscopic Diagnostics

SiO2 film growth by ArF laser photolysis of SiH4/N2O mixtures

1991 ◽  
Vol 51 (3-4) ◽  
pp. 171-176 ◽  
Author(s):  
Masaharu Tsuji ◽  
Minoru Sakumoto ◽  
Naoki Itoh ◽  
Hiroshi Obase ◽  
Yukio Nishimura
Keyword(s):  
Film Growth ◽  
Sio2 Film ◽  
Laser Photolysis ◽  
Arf Laser

Mechanisms of Al film growth by ultraviolet laser photolysis of trimethylaluminum

1986 ◽  
Vol 4 (6) ◽  
pp. 3146-3152 ◽  
Author(s):  
T. Motooka ◽  
S. Gorbatkin ◽  
D. Lubben ◽  
Djula Eres ◽  
J. E. Greene
Keyword(s):  
Film Growth ◽  
Laser Photolysis ◽  
Ultraviolet Laser

UV‐laser photolysis of trimethylaluminum for Al film growth

1985 ◽  
Vol 58 (11) ◽  
pp. 4397-4401 ◽  
Author(s):  
T. Motooka ◽  
S. Gorbatkin ◽  
D. Lubben ◽  
J. E. Greene
Keyword(s):  
Film Growth ◽  
Laser Photolysis ◽  
Uv Laser

Spectroscopic Diagnostics of Tokamaks

1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis
Keyword(s):  
Transport Properties ◽  
Power Losses ◽  
Spectroscopic Diagnostics ◽  
Important Concern

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

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