Performance optimization of long-wave infrared detectors based on InAs/GaSb strained layer superlattices

2011 ◽  
Author(s):  
Elena Plis ◽  
Brianna Klein ◽  
Nutan Gautam ◽  
Stephen Myers ◽  
Maya N. Kutty ◽  
...  
Keyword(s):  
Performance Optimization ◽  
Infrared Detectors ◽  
Strained Layer ◽  
Long Wave ◽  
Strained Layer Superlattices ◽  
Long Wave Infrared

scholarly journals Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors

2015 ◽  
Vol 44 (10) ◽  
pp. 3360-3366 ◽  
Author(s):  
Youxi Lin ◽  
Dmitry Donetsky ◽  
Ding Wang ◽  
David Westerfeld ◽  
Gela Kipshidze ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Long Wave ◽  
Long Wave Infrared

Study of minority carrier lifetimes in very long-wave infrared strained-layer InAs/GaInSb superlattices

2016 ◽  
Author(s):  
H. J. Haugan ◽  
B. V. Olson ◽  
G. J. Brown ◽  
E. A. Kadlec ◽  
J. K. Kim ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Strained Layer ◽  
Carrier Lifetimes ◽  
Long Wave ◽  
Minority Carrier Lifetimes ◽  
Long Wave Infrared

Ultra-thin enhanced-absorption long-wave infrared detectors

2018 ◽  
Vol 112 (9) ◽  
pp. 091104 ◽  
Author(s):  
Shaohua Wang ◽  
Narae Yoon ◽  
Abhilasha Kamboj ◽  
Priyanka Petluru ◽  
Wanhua Zheng ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Enhanced Absorption ◽  
Long Wave ◽  
Long Wave Infrared

Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes

2009 ◽  
Vol 38 (9) ◽  
pp. 1944-1947 ◽  
Author(s):  
Koushik Banerjee ◽  
Siddhartha Ghosh ◽  
Shubhrangshu Mallick ◽  
Elena Plis ◽  
Sanjay Krishna
Keyword(s):  
Electrical Characterization ◽  
Strained Layer ◽  
Long Wave ◽  
Strained Layer Superlattice ◽  
Long Wave Infrared

Single-image-based nonuniformity correction of uncooled long-wave infrared detectors: a deep-learning approach

2018 ◽  
Vol 57 (18) ◽  
pp. D155 ◽  
Author(s):  
Zewei He ◽  
Yanpeng Cao ◽  
Yafei Dong ◽  
Jiangxin Yang ◽  
Yanlong Cao ◽  
...  
Keyword(s):  
Deep Learning ◽  
Infrared Detectors ◽  
Learning Approach ◽  
Single Image ◽  
Nonuniformity Correction ◽  
Long Wave ◽  
Long Wave Infrared

Infrared Photoconductivity and Photoluminescence from InAs/Ga1–xInxSb Strained-Layer Superlattices

1990 ◽  
Vol 198 ◽  
Author(s):  
R. H. Miles ◽  
D. H. Chow ◽  
T. C. Mcgill
Keyword(s):  
Infrared Detectors ◽  
Far Infrared ◽  
Thin Layers ◽  
Band Gaps ◽  
Infrared Detection ◽  
Strained Layer ◽  
Energy Gaps ◽  
Theoretical Predictions ◽  
Spectrally Resolved ◽  
Strained Layer Superlattices

ABSTRACTWe have examined spectrally resolved photoconductivity and photoluminescence from InAs/Ga1–xInxSb strained-layer superlattices, which have been proposed as infrared detectors in the 8-14 μm region. Our measurements indicate that the energy gaps of the strained–layer superlattices are substantially smaller than those of InAs/GaSb superlattices with similar layer thicknesses, in agreement with previous theoretical predictions. Measurements on InAs/Ga1–xInxSb superlattices with x=0 and 0.25 and layer thicknesses of 25 – 45 A indicate superlattice band gaps of 3 – 15 μm, in excellent agreement with gaps calculated by a two band k · p model. Our results demonstrate that far-infrared energy gaps are compatible with the thin layers necessary for strong optical absorption in type-IT superlattices, and suggest that InAs/Ga1–xInxSb superlattices are promising candidates for far-infrared detection.

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