Study of minority carrier lifetimes in very long-wave infrared strained-layer InAs/GaInSb superlattices

2016 ◽  
Author(s):  
H. J. Haugan ◽  
B. V. Olson ◽  
G. J. Brown ◽  
E. A. Kadlec ◽  
J. K. Kim ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Strained Layer ◽  
Carrier Lifetimes ◽  
Long Wave ◽  
Minority Carrier Lifetimes ◽  
Long Wave Infrared

Significantly enhanced carrier lifetimes of very long-wave infrared absorbers based on strained-layer InAs/GaInSb superlattices

2017 ◽  
Vol 56 (9) ◽  
pp. 091604 ◽  
Author(s):  
Heather J. Haugan ◽  
Benjamin V. Olson ◽  
Gail J. Brown ◽  
Emil A. Kadlec ◽  
Jin K. Kim ◽  
...  
Keyword(s):  
Strained Layer ◽  
Carrier Lifetimes ◽  
Long Wave ◽  
Long Wave Infrared

InSb: A Key Material for IR Detector Applications

1986 ◽  
Vol 90 ◽  
Author(s):  
S. R. Jost ◽  
V. F. Meikleham ◽  
T. H. Myers
Keyword(s):  
Minority Carrier ◽  
Bulk Material ◽  
Device Performance ◽  
Injection Device ◽  
Ir Detector ◽  
Material Parameters ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes ◽  
Growth Technology ◽  
Device Technology

ABSTRACTInSb has served as an important mid-wave IR (λ=3−5μm) detector material for several decades. In this presentation, we will briefly review General Electric's InSb Charge Injection Device technology. Emphasis will be placed on device performance as a function of material parameters. A new InSb materials technology utilizing liquid phase epitaxy will be described. This epitaxial growth technology improves InSb material parameters and increases minority carrier lifetimes by more than two orders of magnitude to near the Auger limit. Comparisons will be made between available bulk material parameters and that of the epitaxial material.

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