Amorphous Si/SiC phototransistors and avalanche photodiodes

C.Y. Chang; J.W. Hong; Y.K. Fang

doi:10.1049/ip-j.1991.0040

Optical and noise characteristics of amorphous Si/SiC superlattice reach-through avalanche photodiodes

IEEE Transactions on Electron Devices ◽

10.1109/16.57130 ◽

1990 ◽

Vol 37 (8) ◽

pp. 1804-1809 ◽

Cited By ~ 12

Author(s):

J.-W. Hong ◽

W.-L. Laih ◽

Y.-W. Chen ◽

Y.-K. Fang ◽

C.-Y. Chang ◽

...

Keyword(s):

Avalanche Photodiodes ◽

Noise Characteristics ◽

Amorphous Si

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Growth of near noble metal Pd and Pt thin film silicides morphology and structure

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100112464 ◽

1984 ◽

Vol 42 ◽

pp. 498-499

Author(s):

E. I. Alessandrini ◽

M. O. Aboelfotoh

Keyword(s):

Noble Metals ◽

Annealing Temperature ◽

Chemical Compounds ◽

Barrier Properties ◽

Solid State Reactions ◽

Transmission Electron ◽

Stable Chemical ◽

Metal Thickness ◽

Amorphous Si ◽

Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

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High-angle electron scattering from amorphous silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100137185 ◽

1995 ◽

Vol 53 ◽

pp. 162-163

Author(s):

M. Libera ◽

J.A. Ott ◽

K. Siangchaew ◽

L. Tsung

Keyword(s):

Electron Scattering ◽

Amorphous Material ◽

Structural Defects ◽

Constant Thickness ◽

High Angle ◽

Fast Electrons ◽

Angle Scattering ◽

Stem Image ◽

Amorphous Si ◽

Thermal Vibrations

Channeling occurs when fast electrons follow atomic strings in a crystal where there is a minimum in the potential energy (1). Channeling has a strong effect on high-angle scattering. Deviations in atomic position along a channel due to structural defects or thermal vibrations increase the probability of scattering (2-5). Since there are no extended channels in an amorphous material the question arises: for a given material with constant thickness, will the high-angle scattering be higher from a crystal or a glass?Figure la shows a HAADF STEM image collected using a Philips CM20 FEG TEM/STEM with inner and outer collection angles of 35mrad and lOOmrad. The specimen (6) was a cross section of singlecrystal Si containing: amorphous Si (region A), defective Si containing many stacking faults (B), two coherent Ge layers (CI; C2), and a contamination layer (D). CBED patterns (fig. lb), PEELS spectra, and HAADF signals (fig. lc) were collected at 106K and 300K along the indicated line.

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HIGH EFFICIENCY, LARGE-AREA PHOTOVOLTAIC DEVICES USING AMORPHOUS Si : F : H ALLOY

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1981497 ◽

1981 ◽

Vol 42 (C4) ◽

pp. C4-463-C4-466

Author(s):

A. Madan ◽

W. Czubatyj ◽

J. Yang ◽

J. McGill ◽

S. R. Ovshinsky

Keyword(s):

High Efficiency ◽

Photovoltaic Devices ◽

Large Area ◽

Amorphous Si

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Harmonized system of quality assessment for electronic components. Semiconductor devices. Optoelectronic devices. Blank detail specification for avalanche photodiodes (APDs) with/without pigtail, for fibre optic systems or subsystems

10.3403/01126847 ◽

1997 ◽

Keyword(s):

Quality Assessment ◽

Semiconductor Devices ◽

Avalanche Photodiodes ◽

Optoelectronic Devices ◽

Fibre Optic ◽

Electronic Components ◽

Optic Systems

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Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

Nanoscience &Nanotechnology-Asia ◽

10.2174/2210681208666180813122642 ◽

2019 ◽

Vol 9 (2) ◽

pp. 192-197

Author(s):

Somrita Ghosh ◽

Aritra Acharyya

Keyword(s):

Optical Pulse ◽

Pulse Current ◽

Avalanche Photodiodes ◽

Simulation Method ◽

Rectangular Pulse ◽

Operating Conditions ◽

Multiple Quantum ◽

Material System ◽

Frequency Responses ◽

The Fourier Transform

Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part. Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors. Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

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