Intersubband impact ionization in THz QWIPs: shaping band structure reorganizations to design novel detectors

The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs

Solid-State Electronics ◽

10.1016/0038-1101(78)90151-x ◽

1978 ◽

Vol 21 (1) ◽

pp. 297-302 ◽

Cited By ~ 119

Author(s):

Thomas P. Pearsall ◽

Federico Capasso ◽

Robert E. Nahory ◽

Martin A. Pollack ◽

James R. Chelikowsky

Keyword(s):

Band Structure ◽

Impact Ionization ◽

Hot Carriers ◽

Structure Dependence

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Influence of the distribution function shape and the band structure on impact ionization modeling

Journal of Applied Physics ◽

10.1063/1.1415366 ◽

2001 ◽

Vol 90 (12) ◽

pp. 6165-6171 ◽

Cited By ~ 19

Author(s):

T. Grasser ◽

H. Kosina ◽

S. Selberherr

Keyword(s):

Distribution Function ◽

Band Structure ◽

Impact Ionization ◽

Function Shape

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Monte Carlo analysis of band structure influence on impact ionization in InP

Solid-State Electronics ◽

10.1016/0038-1101(93)90152-g ◽

1993 ◽

Vol 36 (2) ◽

pp. 285-290 ◽

Cited By ~ 13

Author(s):

V. Chandramouli ◽

C.M. Maziar

Keyword(s):

Monte Carlo ◽

Band Structure ◽

Impact Ionization ◽

Monte Carlo Analysis

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Transient analysis of impact ionization anisotropy using realistic band structure for GaAs

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) ◽

10.1109/iwce.1998.742747 ◽

2002 ◽

Author(s):

H.K. Jung ◽

H. Nakano ◽

K. Taniguchi

Keyword(s):

Band Structure ◽

Transient Analysis ◽

Impact Ionization

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Reply to ’’Comment on ’Simulation of high‐field transport in GaAs using a Monte Carlo method and pseudopotential band structures’ and on ’Band‐structure dependent transport and impact ionization in GaAs’ ’’

Journal of Applied Physics ◽

10.1063/1.330994 ◽

1982 ◽

Vol 53 (4) ◽

pp. 3327-3329 ◽

Cited By ~ 7

Author(s):

K. Hess ◽

J. Y. Tang ◽

K. Brennan ◽

H. Shichijo ◽

G. E. Stillman

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Band Structure ◽

High Field ◽

Impact Ionization ◽

Band Structures ◽

Dependent Transport

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Band-structure-dependent transport and impact ionization in GaAs

Physical Review B ◽

10.1103/physrevb.23.4197 ◽

1981 ◽

Vol 23 (8) ◽

pp. 4197-4207 ◽

Cited By ~ 246

Author(s):

H. Shichijo ◽

K. Hess

Keyword(s):

Band Structure ◽

Impact Ionization ◽

Dependent Transport

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Modelling Impact-Ionization in the Framework of the Spherical-Harmonics Expansion of the Boltzmann Transport Equation with Full-Band Structure Effects

Simulation of Semiconductor Devices and Processes ◽

10.1007/978-3-7091-6619-2_100 ◽

1995 ◽

pp. 416-419 ◽

Cited By ~ 2

Author(s):

M. C. Vecchi ◽

M. Rudan

Keyword(s):

Band Structure ◽

Transport Equation ◽

Spherical Harmonics ◽

Impact Ionization ◽

Boltzmann Transport Equation ◽

Boltzmann Transport ◽

Full Band ◽

Spherical Harmonics Expansion ◽

Full Band Structure

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Impact-ionization theory consistent with a realistic band structure of silicon

Physical Review B ◽

10.1103/physrevb.45.4171 ◽

1992 ◽

Vol 45 (8) ◽

pp. 4171-4180 ◽

Cited By ~ 129

Author(s):

Nobuyuki Sano ◽

Akira Yoshii

Keyword(s):

Band Structure ◽

Impact Ionization

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Impact‐ionization model consistent with the band structure of semiconductors

Journal of Applied Physics ◽

10.1063/1.358839 ◽

1995 ◽

Vol 77 (5) ◽

pp. 2020-2025 ◽

Cited By ~ 41

Author(s):

Nobuyuki Sano ◽

Akira Yoshii

Keyword(s):

Band Structure ◽

Impact Ionization ◽

Ionization Model

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Full-band-structure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAs

Journal of Technology Computer Aided Design TCAD ◽

10.1109/tcad.1996.6449160 ◽

1996 ◽

pp. 1-50 ◽

Cited By ~ 11

Author(s):

M V. Fischetti ◽

N. Sano ◽

S. E. Laux ◽

K. Natori

Keyword(s):

Band Structure ◽

High Field ◽

Impact Ionization ◽

Structure Theory ◽

Full Band ◽

Full Band Structure

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