Impact‐ionization model consistent with the band structure of semiconductors

1995 ◽  
Vol 77 (5) ◽  
pp. 2020-2025 ◽  
Author(s):  
Nobuyuki Sano ◽  
Akira Yoshii
Keyword(s):  
Band Structure ◽  
Impact Ionization ◽  
Ionization Model

The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs

1978 ◽  
Vol 21 (1) ◽  
pp. 297-302 ◽  
Author(s):  
Thomas P. Pearsall ◽  
Federico Capasso ◽  
Robert E. Nahory ◽  
Martin A. Pollack ◽  
James R. Chelikowsky
Keyword(s):  
Band Structure ◽  
Impact Ionization ◽  
Hot Carriers ◽  
Structure Dependence

Accurate impact ionization model which accounts for hot and cold carrier populations

2002 ◽  
Vol 80 (4) ◽  
pp. 613-615 ◽  
Author(s):  
T. Grasser ◽  
H. Kosina ◽  
C. Heitzinger ◽  
S. Selberherr
Keyword(s):  
Impact Ionization ◽  
Ionization Model

Impact ionization model for full band Monte Carlo simulation

1994 ◽  
Vol 75 (7) ◽  
pp. 3500-3506 ◽  
Author(s):  
Y. Kamakura ◽  
H. Mizuno ◽  
M. Yamaji ◽  
M. Morifuji ◽  
K. Taniguchi ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impact Ionization ◽  
Full Band ◽  
Ionization Model
Sign in / Sign up

Export Citation Format

Share Document