Reply to ’’Comment on ’Simulation of high‐field transport in GaAs using a Monte Carlo method and pseudopotential band structures’ and on ’Band‐structure dependent transport and impact ionization in GaAs’ ’’

K. Hess; J. Y. Tang; K. Brennan; H. Shichijo; G. E. Stillman

doi:10.1063/1.330994

Reply to ’’Comment on ’Simulation of high‐field transport in GaAs using a Monte Carlo method and pseudopotential band structures’ and on ’Band‐structure dependent transport and impact ionization in GaAs’ ’’

Journal of Applied Physics ◽

10.1063/1.330994 ◽

1982 ◽

Vol 53 (4) ◽

pp. 3327-3329 ◽

Cited By ~ 7

Author(s):

K. Hess ◽

J. Y. Tang ◽

K. Brennan ◽

H. Shichijo ◽

G. E. Stillman

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Band Structure ◽

High Field ◽

Impact Ionization ◽

Band Structures ◽

Dependent Transport

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Comment on ’’Simulation of high‐field transport in GaAs using a Monte Carlo method and pseudopotential band structures’’ and on ’’Band‐structure dependent transport and impact ionization in GaAs’’

Journal of Applied Physics ◽

10.1063/1.330993 ◽

1982 ◽

Vol 53 (4) ◽

pp. 3324-3326 ◽

Cited By ~ 16

Author(s):

F. Capasso ◽

T. P. Pearsall ◽

K. K. Thornber ◽

R. E. Nahory ◽

M. A. Pollack ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Band Structure ◽

High Field ◽

Impact Ionization ◽

Band Structures ◽

Dependent Transport

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Simulation of high‐field transport in GaAs using a Monte Carlo method and pseudopotential band structures

Applied Physics Letters ◽

10.1063/1.92266 ◽

1981 ◽

Vol 38 (2) ◽

pp. 89-91 ◽

Cited By ~ 17

Author(s):

H. Shichijo ◽

K. Hess ◽

G. E. Stillman

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

High Field ◽

Band Structures

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Calculation of high‐field diffusivity by a many‐particle Monte Carlo simulation including a complete band structure for GaAs

Journal of Applied Physics ◽

10.1063/1.333811 ◽

1984 ◽

Vol 56 (10) ◽

pp. 2793-2795 ◽

Cited By ~ 6

Author(s):

T. Wang ◽

K. Hess

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Band Structure ◽

High Field

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Calculation of High Field Electron Transport Properties in GaSb and GaAS Using a Monte Carlo Method

Research Journal of Applied Sciences ◽

10.3923/rjasci.2011.213.217 ◽

2011 ◽

Vol 6 (3) ◽

pp. 213-217

Author(s):

H. Arabshahi ◽

F. Taghavi

Keyword(s):

Monte Carlo ◽

Electron Transport ◽

Monte Carlo Method ◽

Transport Properties ◽

High Field ◽

Field Electron ◽

Electron Transport Properties

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Current impulse response of thin InP p+‐i‐n+ diodes using full band structure Monte Carlo method

Journal of Applied Physics ◽

10.1063/1.2434827 ◽

2007 ◽

Vol 101 (4) ◽

pp. 044502 ◽

Cited By ~ 3

Author(s):

A. H. You ◽

P. L. Cheang

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Band Structure ◽

Impulse Response ◽

Current Impulse ◽

Full Band ◽

Full Band Structure

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Monte Carlo analysis of band structure influence on impact ionization in InP

Solid-State Electronics ◽

10.1016/0038-1101(93)90152-g ◽

1993 ◽

Vol 36 (2) ◽

pp. 285-290 ◽

Cited By ~ 13

Author(s):

V. Chandramouli ◽

C.M. Maziar

Keyword(s):

Monte Carlo ◽

Band Structure ◽

Impact Ionization ◽

Monte Carlo Analysis

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Degeneracy in the ensemble Monte Carlo method for high-field transport in semiconductors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1985.22291 ◽

1985 ◽

Vol 32 (11) ◽

pp. 2431-2437 ◽

Cited By ~ 242

Author(s):

P. Lugli ◽

D.K. Ferry

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

High Field ◽

Ensemble Monte Carlo

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On the Impact Ionization of Double-Gate MOSFET Using Full Band Monte Carlo Method

2008 8th IEEE Conference on Nanotechnology ◽

10.1109/nano.2008.105 ◽

2008 ◽

Author(s):

Ping Bai ◽

Ken Chang ◽

R. S. Kajen ◽

Erping Li ◽

Ganesh Samudra

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Impact Ionization ◽

Double Gate ◽

Full Band ◽

Double Gate Mosfet ◽

The Impact

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Band-structure-dependent transport and impact ionization in GaAs

Physical Review B ◽

10.1103/physrevb.23.4197 ◽

1981 ◽

Vol 23 (8) ◽

pp. 4197-4207 ◽

Cited By ~ 246

Author(s):

H. Shichijo ◽

K. Hess

Keyword(s):

Band Structure ◽

Impact Ionization ◽

Dependent Transport

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Full-band-structure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAs

Journal of Technology Computer Aided Design TCAD ◽

10.1109/tcad.1996.6449160 ◽

1996 ◽

pp. 1-50 ◽

Cited By ~ 11

Author(s):

M V. Fischetti ◽

N. Sano ◽

S. E. Laux ◽

K. Natori

Keyword(s):

Band Structure ◽

High Field ◽

Impact Ionization ◽

Structure Theory ◽

Full Band ◽

Full Band Structure

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