Influence of the distribution function shape and the band structure on impact ionization modeling

2001 ◽  
Vol 90 (12) ◽  
pp. 6165-6171 ◽  
Author(s):  
T. Grasser ◽  
H. Kosina ◽  
S. Selberherr
Keyword(s):  
Distribution Function ◽  
Band Structure ◽  
Impact Ionization ◽  
Function Shape

The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs

1978 ◽  
Vol 21 (1) ◽  
pp. 297-302 ◽  
Author(s):  
Thomas P. Pearsall ◽  
Federico Capasso ◽  
Robert E. Nahory ◽  
Martin A. Pollack ◽  
James R. Chelikowsky
Keyword(s):  
Band Structure ◽  
Impact Ionization ◽  
Hot Carriers ◽  
Structure Dependence

scholarly journals Spherical Harmonic Modeling of a 0.05 μm Base BJT: A Comparison with Monte Carlo and Asymptotic Analysis

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 147-151 ◽  
Author(s):  
C.-H. Chang ◽  
C.-K. Lin ◽  
N. Goldsman ◽  
I. D. Mayergoyz
Keyword(s):  
Monte Carlo ◽  
Distribution Function ◽  
Band Structure ◽  
Asymptotic Analysis ◽  
Energy Distribution ◽  
Transport Equation ◽  
Spherical Harmonic ◽  
Boltzmann Transport Equation ◽  
System Of Equations ◽  
Boltzmann Transport

We perform a rigorous comparison between the Spherical Harmonic (SH) and Monte Carlo (MC) methods of solving the Boltzmann Transport Equation (BTE), on a 0.05 μm base BJT. We find the SH and the MC methods give very similar results for the energy distribution function, using an analytical band-structure, at all points within the tested devices. However, the SH method can be as much as seven thousand times faster than the MC approach for solving an identical problem. We explain the agreement by asymptotic analysis of the system of equations generated by the SH expansion of the BTE.

scholarly journals Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 454-461 ◽  
Author(s):  
Paul Hasler ◽  
Andreas G. Andreou ◽  
Chris Diorio ◽  
Bradley A. Minch ◽  
Carver A. Mead
Keyword(s):  
Distribution Function ◽  
Impact Ionization ◽  
Electron Distribution Function ◽  
Electron Injection ◽  
Quantitative Model ◽  
Depletion Region ◽  
Hot Electron ◽  
Boltzmann Transport ◽  
Hot Electron Injection ◽  
The Impact

We develop a quantitative model of the impact-ionizationand hot-electron–injection processes in MOS devices from first principles. We begin by modeling hot-electron transport in the drain-to-channel depletion region using the spatially varying Boltzmann transport equation, and we analytically find a self consistent distribution function in a two step process. From the electron distribution function, we calculate the probabilities of impact ionization and hot-electron injection as functions of channel current, drain voltage, and floating-gate voltage. We compare our analytical model results to measurements in long-channel devices. The model simultaneously fits both the hot-electron- injection and impact-ionization data. These analytical results yield an energydependent impact-ionization collision rate that is consistent with numerically calculated collision rates reported in the literature.

Sign in / Sign up

Export Citation Format

Share Document