Si (211) substrate thinning technology for HgCdTe focal plane arrays on Si substrates

2010 ◽  
Author(s):  
Shan Zhang ◽  
Chenfei Wang ◽  
Juying Cao ◽  
Xiaoning Hu
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Si Substrates

InSb Detectors and Focal Plane Arrays on GaAs, Si, and Al203 Substrates

1996 ◽  
Vol 450 ◽  
Author(s):  
E. Michel ◽  
H. Mohseni ◽  
J. Wojkowski ◽  
J. Sandven ◽  
J. Xu ◽  
...  
Keyword(s):  
Thermal Imaging ◽  
Focal Plane ◽  
Growth Conditions ◽  
Substrate Material ◽  
Focal Plane Arrays ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Si Substrates ◽  
Sapphire Substrates ◽  
Gaas Substrates

ABSTRACTIn this paper, we report on the growth and fabrication of InSb detectors and Focal Plane Arrays (FPA's) on (100) Si, Al203, and (100) and (111) GaAs substrates for infrared (IR) imaging. Several advantages result from using GaAs, Si, or Al203. First, InSb FPA's on these materials do not require thinning as with detectors fabricated from bulk InSb. In addition, these substrates are available in larger sizes, are semi-insulating (GaAs and sapphire), and are less expensive than InSb.Optimum growth conditions have been determined and discrete devices have been fabricated on each substrate material. The structural, electrical, and optical properties were verified using x-ray, Hall, photoresponse, and photoluminescence (PL) measurements. Measured x-ray Full Widths at Half Maximum (FWHM) were as low as 55 and 100 arcsec for InSb epilayers on GaAs and Si, respectively. Hall mobilities were as high as 128,000, 95,000 and 72,000 cm2/V-sec at 200 K, 77 K, and room temperature, respectively. In addition, 77 K PL linewidths were as low as 18, 20, and 30 meV on GaAs, Si, and sapphire substrates respectively, well below the 48 meV value previously reported in the literature.In collaboration with Lockheed Martin Fairchild Systems (LMFS), IR thermal imaging has been obtained from InSb FPA's on GaAs and Si substrates. This is the first successful IR thermal imaging from heteroepitaxially grown InSb. Because of the high quality substrates, larger areas, and higher yields, this technology is very promising for challenging traditional InSb FPA hybrid technology.

Heteroepitaxial HgCdTe/CdZnTe/GaAs/Si Materials for Infrared Focal Plane Arrays

1990 ◽  
Vol 216 ◽  
Author(s):  
S.M. Johnson ◽  
J.B. James ◽  
W.L. Ahlgren ◽  
W.J. Hamilton ◽  
M. Ray ◽  
...  
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
General Characteristic ◽  
Focal Plane Arrays ◽  
Misfit Dislocations ◽  
Cutoff Wavelength ◽  
X Ray Diffraction ◽  
Dislocation Interaction ◽  
X Ray ◽  
Si Substrates

ABSTRACTThe structural properties of LPE-grown HgCdTe on heteroepitaxial MOCVD-grown CdZnTe/GaAs/Si substrates were evaluated using high-resolution x-ray diffraction techniques and TEM. Large tilts {up to 4°} between CdZnTe layers and GaAs/Si substrates are a general characteristic of this heteroepitaxial system and are are attributed to the interaction of closely spaced misfit dislocations that arrange to form a tilt boundary. Either {112}CdTe or {552}CdTe can be grown on {112}GaAs/Si; the {552} was shown to result from a first-order twinning operation of {112}. Lamnella {111} microtwins in {111}CdZnTe/{100}GaAs/Si substrates, measured by x-ray techniques, are not readily propagated into the LPE-grown HgCdTe layer. The x-ray FWHM of the LPE HgCdTe is typically at least a factor of two lower than that of the Si-based substrate from annealing and due to the increased thickness of the layer; both mechanisms promote dislocation interaction and annihilation. High performance MWIR and LWIR HgCdTe 128×128 hybrid focal plane arrays were fabricated on these Si-based substrates. An array average of ROAj = 17.8 ohmcm2 for a cutoff wavelength of 10.8 μm at 78K was demonstrated.

MBE Growth Considerations for the Fabrication of 640×480 IR Focal Plane Arrays of SiGe Hip Detectors

1995 ◽  
Vol 402 ◽  
Author(s):  
P. E. Hompson ◽  
M. Weeks ◽  
P. Tedrow ◽  
K. Hobart
Keyword(s):  
Focal Plane ◽  
Sige Layer ◽  
Focal Plane Arrays ◽  
Optical Pyrometer ◽  
Ir Detectors ◽  
Detector Arrays ◽  
Si Substrates ◽  
Boron Doped ◽  
B Doping ◽  
Microelectronic Processing

AbstractEncouraging results have been reported for discrete heterojunction internal photoemission (HIP) infrared (IR) detectors composed of heavily boron doped Si1−3Gex layers on Si. We desired to build on those results and fabricate 640×480 IR focal plane arrays on 100 mm Si substrates, suitable for commercial microelectronic processing. In this paper we discuss the growth issues for growing these structures by molecular beam epitaxy. Since the wafers had already undergone processing and some had PtSi contacts, the growth temperature was constrained to be no greater than 600 °C. Precise temperature control was obtained by calibrating an optical pyrometer with a thermocouple embedded in the substrate heater assembly, which was calibrated using the eutectic emperatures of Au/Si and Al/Si. The final step of the cleaning process was a 1% HF dip/ spin dry, which resulted in a H-terminated surface. The H was removed at 550 °C in vacuum prior to rowth. The growth of the B-doped SiGe layer was done at 350 °C to minimize segregation and diffusion of the Ge and B. Doping levels of 2×1020/cm3 were obtained with near 100% activation. Using Si0.35, doped with 2×1020 B/cm3, a cut-off wavelength of 11.1 μm and an emission coefficient of 19.8 %/eV were obtained for discrete detectors. Preliminary results from the detector arrays show full functionality in the spectral range of 6.1 to 12.8 μm.

Direct growth of CdZnTe/Si substrates for large-area HgCdTe infrared focal plane arrays

1995 ◽  
Vol 24 (5) ◽  
pp. 467-473 ◽  
Author(s):  
S. M. Johnson ◽  
T. J. de Lyon ◽  
C. A. Cockrum ◽  
W. J. Hamilton ◽  
T. Tung ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Large Area ◽  
Infrared Focal Plane Arrays ◽  
Si Substrates ◽  
Direct Growth

High-Performance Long-Wavelength Infrared HgCdTe Focal Plane Arrays Fabricated on CdSeTe Compliant Si Substrates

2010 ◽  
Vol 57 (4) ◽  
pp. 782-787 ◽  
Author(s):  
Priyalal S. Wijewarnasuriya ◽  
Yuanping Chen ◽  
Gregory Brill ◽  
Bahram Zandi ◽  
Nibir K. Dhar
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
Focal Plane Arrays ◽  
Long Wavelength ◽  
Si Substrates ◽  
Long Wavelength Infrared

Deposition and Characterization of Pyroelectric PMN-PT Thin Films for Uncooled Infrared Focal Plane Arrays

2011 ◽  
Vol 687 ◽  
pp. 242-246
Author(s):  
Yan Xue Tang ◽  
Yue Tian ◽  
Fei Fei Wang ◽  
Wang Zhou Shi
Keyword(s):  
Thin Films ◽  
Focal Plane ◽  
High Performance ◽  
Pyroelectric Coefficient ◽  
Focal Plane Arrays ◽  
Infrared Focal Plane Arrays ◽  
Si Substrates ◽  
Low Dielectric ◽  
Device Applications ◽  
Electric Filed

Modern uncooled infrared focal plane arrays (UFPA) development is oriented toward silicon microstructure monolithic arrays by employing pyroelectric thin films with continuing trends in high performance and miniaturization. In order to exploit high performance pyroelectric thin films, (1−x)Pb(Mg1/3Nb2/3)O3−xPbTiO3(PMN-PT) thin films withx= 0.26 were deposited on LaNiO3/Si substrates by the radio-frequency magnetron sputtering technique. (110) preferred orientation thin films with pure perovskite structures were obtained at a substrate temperature of 500°C. The ferroelectric, dielectric and pyroelectric properties of the films were investigated. The films show a typical polarization – electric filed hysteresis loop with a large remnant polarization of 17.2 μC/cm2. At room temperature, the high pyroelectric coefficient of 3.1 × 10-4C/m2K together with low dielectric constant of 470 and loss tangent of 0.04 render the film promising for uncooled infrared device applications. The origin of the differences in electrical properties between the films and bulk materials has also been discussed.

GeSi Infrared Detectors Using Selective Deposition

1995 ◽  
Vol 402 ◽  
Author(s):  
R. Strong ◽  
D. W. Greve ◽  
M. M. Weeks
Keyword(s):  
Focal Plane ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Focal Plane Arrays ◽  
Ultra High Vacuum ◽  
Optical Measurements ◽  
Ir Detectors ◽  
Si Substrates ◽  
Thermal Oxide ◽  
Barrier Type

AbstractHeterojunction p++ GeSi / Si internal photoemission (HIP) detectors deposited by ultra high vacuum chemical vapor deposition (UHV/CVD) were investigated as alternatives to silicide Schottky-barrier type detectors for infrared focal plane arrays. HIP structures were grown using SiH4, GeH4, and B2H6 source gases on (100) p- Si substrates patterned with thermal oxide windows. Selective epitaxy was maintained over a range of boron concentrations (6×1019 – 6.5×1020 cm-3) and Ge fractions (0.38–0.50), and a maximum selective thickness of ~300Å was determined for silicon growth at 550°C. These structures were fabricated into IR detectors using techniques compatible with standard Si focal plane array processing technology. Photoresponse data were analyzed according to the modified Fowler equation, indicating cut-off wavelengths of 5–12 (μm) and Cl values of 8–21 (%/eV) depending on sample parameters. I(V) characteristics were also measured at various temperatures, yielding electrical barrier heights consistent with optical measurements.

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