Optical spectroscopy of Er doped Si-nanocrystals on sapphire substrates fabricated by ion implantation into SiO 2

2010 ◽  
Author(s):  
N. P. Hylton ◽  
I. F. Crowe ◽  
A. P. Knights ◽  
M. P. Halsall ◽  
S. Ruffell ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Optical Spectroscopy ◽  
Sapphire Substrates ◽  
Si Nanocrystals ◽  
Er Doped

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing

2001 ◽  
Vol 45 (8) ◽  
pp. 1487-1494 ◽  
Author(s):  
Tsutomu Shimizu-Iwayama ◽  
Takayuki Hama ◽  
David E Hole ◽  
Ian W Boyd
Keyword(s):  
Ion Implantation ◽  
Photoluminescence Properties ◽  
Si Nanocrystals

Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation

2016 ◽  
Vol 14 (5) ◽  
pp. 051602-51605 ◽  
Author(s):  
Xiaodan Wang Xiaodan Wang ◽  
Yajuan Mo Yajuan Mo ◽  
Xionghui Zeng Xionghui Zeng ◽  
Hongmin Mao Hongmin Mao ◽  
Jianfeng Wang Jianfeng Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Thick Films ◽  
Er Doped

Enhanced emission of Er3+ from alternately Er doped Si-rich Al2O3 multilayer film with Si nanocrystals as broadband sensitizers

2012 ◽  
Vol 258 (6) ◽  
pp. 1896-1901 ◽  
Author(s):  
Xiao Wang ◽  
Zuimin Jiang ◽  
Fei Xu ◽  
Zhongquan Ma ◽  
Run Xu ◽  
...  
Keyword(s):  
Multilayer Film ◽  
Si Nanocrystals ◽  
Er Doped

Coupling and Cooperative Up-conversion Coefficients in Er-doped Si Nanocrystals

2003 ◽  
Vol 770 ◽  
Author(s):  
Domenico Pacifici ◽  
Giorgia Franzò ◽  
Fabio Iacona ◽  
Francesco Priolo
Keyword(s):  
Steady State ◽  
Energy Level ◽  
Energy Level Scheme ◽  
Time Resolved ◽  
A Value ◽  
Si Nanocrystals ◽  
Si Nanocrystal ◽  
Conversion Coefficients ◽  
Quantitative Understanding ◽  
Er Doped

AbstractIn the present work, a quantitative understanding of the Er-doped Si nanocrystals interaction is reported. We present a model based on an energy level scheme taking into account the coupling between each Si nanocrystal and the neighboring Er ions. By fitting the steady state and time resolved luminescence signals at both the 1.54 and 0.98 μm Er lines we were able to determine a value of 3×10-15 cm3 s-1 for the coupling coefficient. Moreover, a strong cooperative up-conversion mechanism, active between two excited Er ions and characterized by a coefficient of 7×10-17 cm3 s-1, will be shown to be active in the system, demonstrating that each Si nanocrystal can actually excite more than one Er ion.

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