Comment on “Optical absorption measurements of silica containing Si nanocrystals produced by ion implantation and thermal annealing” [Appl. Phys. Lett. 80, 1325 (2002)]

2002 ◽  
Vol 81 (7) ◽  
pp. 1357-1358 ◽  
Author(s):  
Leonid Khriachtchev
Keyword(s):  
Optical Absorption ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Si Nanocrystals ◽  
Absorption Measurements

Synthesis and Properties of GaAs Nanocrystals in Sio2 Formed by Ion Implantation

1995 ◽  
Vol 396 ◽  
Author(s):  
Jane G. Zhu ◽  
C. W. White ◽  
D. J. Wallis ◽  
J. D. Budai ◽  
S. P. Withrow
Keyword(s):  
Optical Absorption ◽  
Ion Implantation ◽  
Size Distributions ◽  
As Species ◽  
Implantation Method ◽  
Diffusion Behaviors ◽  
Absorption Measurements

AbstractGaAs nanocrystals have been formed by the sequential ion implantation method. The sequence of Ga and As ion implantation (i.e., Ga + As or As + Ga) is found to affect the size distributions of GaAs nanocrystals significantly. The nanocrystal sizes are much bigger in the samples with Ga implanted first than those with As implanted first. This phenomenon is explained by the different diffusion behaviors of Ga and As species. Different precipitate regions have been observed in the samples implanted with Ga first and then As. Optical absorption measurements show that Ga particles have already formed in the as-implanted stage.

Optical Properties Of Si Nanocrystals Formed In Si02 By Ion Implantation

1998 ◽  
Vol 507 ◽  
Author(s):  
C. W. White ◽  
S. P. Withrow ◽  
A. Meldrum ◽  
J. D. Budai ◽  
D. M. Hembree ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Ion Implantation ◽  
Quantum Confinement ◽  
Dose Dependence ◽  
Interface States ◽  
High Dose ◽  
Size Dependent ◽  
Si Nanocrystals

ABSTRACTSi nanocrystals formed in SiO2 by high-dose ion implantation and annealing give rise to strong optical absorption and intense photoluminescence (PL). The dose dependence of optical absorption provides evidence for size-dependent quantum confinement in the Si nanocrystals. PL peak energies are nearly independent of dose suggesting that surface or interface states play an important role in PL. Estimates of absorption bandgaps in the nanocrystals are given.

Hydrogen Passivation of Si Nanocrystals in Silica

2000 ◽  
Vol 650 ◽  
Author(s):  
Stephanie Cheylan ◽  
Robert G. Elliman
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Silicon Nanocrystals ◽  
Emission Spectra ◽  
Red Shift ◽  
High Dose ◽  
Hydrogen Passivation ◽  
High Fluence ◽  
Si Nanocrystals ◽  
Pl Emission

ABSTRACTThis paper explores the effect of hydrogen on the luminescence properties of silicon nanocrystals formed in silica by high-dose ion-implantation and thermal annealing. For samples implanted to low fluence (small nanocrystals), passivation is shown to result in a uniform enhancement of the PL emission for all wavelengths. However, for samples implanted to high fluence, preferential enhancement of the emission from larger nanocrystals is evident, resulting in a red-shift of emission spectra. Both the intensity enhancement and the red-shift are shown to be reversible, with spectra returning to their pre-passivation form when H is removed from the samples by annealing. The luminescence lifetime is also shown to increase after passivation, confirming that defect-containing nanocrystals luminesce.

Fabrication and evolution of nanostructure in Al2O3 single crystals by Zn+ ion implantation and thermal annealing

Vacuum ◽  
2013 ◽  
Vol 89 ◽  
pp. 132-135
Author(s):  
J.X. Xu ◽  
X.H. Xiao ◽  
F. Ren ◽  
X.D. Zhou ◽  
G.X. Cai ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Thermal Annealing

Comment on ‘‘Optical absorption measurements of hydrogen at megabar pressures’’

1995 ◽  
Vol 52 (2) ◽  
pp. 1405-1407 ◽  
Author(s):  
Arthur L. Ruoff ◽  
Kouros Ghandehari
Keyword(s):  
Optical Absorption ◽  
Absorption Measurements

Properties of the TiSi2/p+nstructures formed by ion implantation through silicide and rapid thermal annealing

1992 ◽  
Vol 72 (1) ◽  
pp. 73-77 ◽  
Author(s):  
H. B. Erzgräber ◽  
P. Zaumseil ◽  
E. Bugiel ◽  
R. Sorge ◽  
K. Tittelbach‐Helmrich ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

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