Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation

2016 ◽  
Vol 14 (5) ◽  
pp. 051602-51605 ◽  
Author(s):  
Xiaodan Wang Xiaodan Wang ◽  
Yajuan Mo Yajuan Mo ◽  
Xionghui Zeng Xionghui Zeng ◽  
Hongmin Mao Hongmin Mao ◽  
Jianfeng Wang Jianfeng Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Thick Films ◽  
Er Doped

Low Temperature Sintering and Tunable Dielectrics Properties of Thick Films added of Li2CO3on BST

2006 ◽  
Vol 16 (12) ◽  
pp. 747-753
Author(s):  
So-Hyun Jeon ◽  
In-Sung Kim ◽  
Sun-Jong Jung ◽  
Jae-Sung Song ◽  
Jon-Do Yoon
Keyword(s):  
Low Temperature ◽  
Thick Films ◽  
Low Temperature Sintering ◽  
Tunable Dielectrics

Amorphous Fe-B alloys produced by ion implantation. II. Low-temperature radiation damage

1985 ◽  
Vol 15 (6) ◽  
pp. 1237-1247 ◽  
Author(s):  
A Audouard ◽  
A Benyagoub ◽  
L Thome ◽  
J Chaumont
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Radiation Damage ◽  
Temperature Radiation

Mössbauer study of iron hydride formation by low temperature ion implantation

1983 ◽  
Vol 46 (8) ◽  
pp. 647-650 ◽  
Author(s):  
F. Schreyer ◽  
G. Frech ◽  
G.K. Wolf ◽  
F.E. Wagner
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Mössbauer Study ◽  
Hydride Formation ◽  
Iron Hydride

Stability of non-equilibrium nickel hydrides prepared by low-temperature ion implantation

1981 ◽  
Vol 68 (2) ◽  
pp. 619-627 ◽  
Author(s):  
L. Brossard ◽  
L. Thomé ◽  
A. Traverse ◽  
H. Bernas ◽  
J. Chaumont ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Nickel Hydrides ◽  
Non Equilibrium

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

scholarly journals Inhomogeneous magnesium hydride synthesized by low temperature ion implantation: weak localization effect

1993 ◽  
Vol 3 (11) ◽  
pp. 2285-2297
Author(s):  
P. Nédellec ◽  
L. Dumoulin ◽  
J. P. Burger ◽  
H. Bernas ◽  
H. Köstler ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Weak Localization ◽  
Magnesium Hydride ◽  
Localization Effect

The substitutionality of hafnium in sapphire by ion implantation and low temperature annealing

1996 ◽  
pp. 602-605
Author(s):  
J.G. Marques ◽  
A.A. Melo ◽  
J.C. Soares ◽  
E. Alves ◽  
M.F. da Silva ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Low Temperature Annealing

An infrared transmission study of Ge:Mn thick films prepared by ion implantation and post-annealing

2020 ◽  
Vol 127 (10) ◽  
pp. 103902
Author(s):  
L. H. Obied ◽  
S. Roorda ◽  
S. Prucnal ◽  
Shengqiang Zhou ◽  
D. A. Crandles
Keyword(s):  
Ion Implantation ◽  
Thick Films ◽  
Infrared Transmission ◽  
Post Annealing ◽  
Transmission Study
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