Enhanced emission of Er3+ from alternately Er doped Si-rich Al2O3 multilayer film with Si nanocrystals as broadband sensitizers

2012 ◽  
Vol 258 (6) ◽  
pp. 1896-1901 ◽  
Author(s):  
Xiao Wang ◽  
Zuimin Jiang ◽  
Fei Xu ◽  
Zhongquan Ma ◽  
Run Xu ◽  
...  
Keyword(s):  
Multilayer Film ◽  
Si Nanocrystals ◽  
Er Doped

Coupling and Cooperative Up-conversion Coefficients in Er-doped Si Nanocrystals

2003 ◽  
Vol 770 ◽  
Author(s):  
Domenico Pacifici ◽  
Giorgia Franzò ◽  
Fabio Iacona ◽  
Francesco Priolo
Keyword(s):  
Steady State ◽  
Energy Level ◽  
Energy Level Scheme ◽  
Time Resolved ◽  
A Value ◽  
Si Nanocrystals ◽  
Si Nanocrystal ◽  
Conversion Coefficients ◽  
Quantitative Understanding ◽  
Er Doped

AbstractIn the present work, a quantitative understanding of the Er-doped Si nanocrystals interaction is reported. We present a model based on an energy level scheme taking into account the coupling between each Si nanocrystal and the neighboring Er ions. By fitting the steady state and time resolved luminescence signals at both the 1.54 and 0.98 μm Er lines we were able to determine a value of 3×10-15 cm3 s-1 for the coupling coefficient. Moreover, a strong cooperative up-conversion mechanism, active between two excited Er ions and characterized by a coefficient of 7×10-17 cm3 s-1, will be shown to be active in the system, demonstrating that each Si nanocrystal can actually excite more than one Er ion.

Enhancement of luminescence quantum yield of 1.5 µm emission from Er-doped SiO2 sensitized with Si nanocrystals

2014 ◽  
Vol 1592 ◽  
Author(s):  
S. Saeed ◽  
T. Gregorkiewicz
Keyword(s):  
Quantum Yield ◽  
Threshold Energy ◽  
Threshold Value ◽  
High Energy ◽  
Excitation Energies ◽  
Si Nanocrystals ◽  
Incoming Photon ◽  
Photon Conversion ◽  
Sample Characteristics ◽  
Er Doped

ABSTRACTExcitation of multiple Er3+ ions upon absorption of a single high-energy photon increases Er-related emission at 1.5 μm, and therefore enhances UV/visible-to-IR photon conversion efficiency. Here we investigate this effect for layers of Er-doped SiO2 sensitized with silicon nanocrystals by measuring the quantum yield of 1.5 µm Er-related emission. We demonstrate dramatic increase of the emission commencing for excitation energies above a certain threshold value, as the number of Er3+ ions excited upon absorption of a single incoming photon increases. By comparing differently prepared materials, we show that the actual value of this threshold energy and the rate of the observed increase of the quantum yield depend on sample characteristics – the size of Si nanocrystals and the ratio of Er3+ ions and nanocrystals concentrations.

Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals

2001 ◽  
Vol 89 (1) ◽  
pp. 264-272 ◽  
Author(s):  
Francesco Priolo ◽  
Giorgia Franzò ◽  
Domenico Pacifici ◽  
Vincenzo Vinciguerra ◽  
Fabio Iacona ◽  
...  
Keyword(s):  
Optical Properties ◽  
Energy Transfer ◽  
Si Nanocrystals ◽  
Er Doped

Annealing temperature dependence of Er3+ photoluminescence in alternately Er-doped Si-rich Al2O3 multilayer film

2010 ◽  
Vol 518 (23) ◽  
pp. 6993-6996 ◽  
Author(s):  
Lili Mai ◽  
Fei Xu ◽  
Zuimin Jiang ◽  
Zhongquan Ma ◽  
Xiao Wang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Multilayer Film ◽  
Annealing Temperature ◽  
Er Doped ◽  
Annealing Temperature Dependence

On the photoluminescence from Si nanocrystals in Er-doped silica by a double-pulse technique

2006 ◽  
Vol 89 (4) ◽  
pp. 041120 ◽  
Author(s):  
E. Borsella ◽  
M. Falconieri ◽  
F. Gourbilleau ◽  
R. Rizk
Keyword(s):  
Double Pulse ◽  
Pulse Technique ◽  
Si Nanocrystals ◽  
Er Doped

Excitation and non-radiative de-excitation processes in Er-doped Si nanocrystals

2001 ◽  
Vol 81 (1-3) ◽  
pp. 9-15 ◽  
Author(s):  
Francesco Priolo ◽  
Giorgia Franzò ◽  
Fabio Iacona ◽  
Domenico Pacifici ◽  
Vincenzo Vinciguerra
Keyword(s):  
Si Nanocrystals ◽  
Excitation Processes ◽  
Er Doped

Optical spectroscopy of Er doped Si-nanocrystals on sapphire substrates fabricated by ion implantation into SiO 2

2010 ◽  
Author(s):  
N. P. Hylton ◽  
I. F. Crowe ◽  
A. P. Knights ◽  
M. P. Halsall ◽  
S. Ruffell ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Optical Spectroscopy ◽  
Sapphire Substrates ◽  
Si Nanocrystals ◽  
Er Doped

Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er

2003 ◽  
Vol 253 (1-4) ◽  
pp. 10-15 ◽  
Author(s):  
C.Y. Chen ◽  
W.D. Chen ◽  
S.F. Song ◽  
C.C. Hsu
Keyword(s):  
Sio2 Films ◽  
Si Nanocrystals ◽  
Er Doped

Ion beam synthesis of undoped and Er-doped Si nanocrystals

2001 ◽  
Vol 175-177 ◽  
pp. 140-147 ◽  
Author(s):  
G Franzò ◽  
E.C Moreira ◽  
D Pacifici ◽  
F Priolo ◽  
F Iacona ◽  
...  
Keyword(s):  
Ion Beam ◽  
Si Nanocrystals ◽  
Ion Beam Synthesis ◽  
Er Doped

Impact of Erbium-Doped Silicon Nanocrystals on the Properties of Polyphenylene Vinylene Films

2000 ◽  
Vol 638 ◽  
Author(s):  
Jeffery L. Coffer ◽  
Junmin Ji
Keyword(s):  
Silicon Nanocrystals ◽  
Carrier Transport ◽  
Force Microscopy ◽  
Atomic Force ◽  
Si Nanocrystals ◽  
Current Voltage ◽  
Erbium Doped ◽  
Polyphenylene Vinylene ◽  
Er Doped

AbstractThis work describes our initial studies of Er-doped Si nanocrystal/poly(phenylene vinylene) (PPV) composites. Preliminary results have focused on the characterization of these materials via atomic force microscopy (AFM), profilometry, absorption/fluorescence spectroscopies, and current-voltage measurements. A particular point of emphasis here concerns the influence of the Er-doped Si nanocrystals on PPV photoluminescence and carrier transport.

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