A new approach to RF MEMS shunt switch modeling from K-band up to W-band

2009 ◽  
Author(s):  
V. Puyal ◽  
D. Dragomirescu ◽  
R. Plana
Keyword(s):  
Rf Mems ◽  
New Approach ◽  
W Band ◽  
K Band

RF MEMS design for phase shifters from K-band up to W-band

2008 ◽  
Author(s):  
V. Puyal ◽  
D. Dragomirescu ◽  
C. Villeneuve ◽  
J. Lattes ◽  
J. Ruan ◽  
...  
Keyword(s):  
Rf Mems ◽  
Phase Shifters ◽  
W Band ◽  
K Band

Design of a novel step structure RF MEMS switch for K-band applications

2020 ◽  
Author(s):  
K. Girija Sravani ◽  
Koushik Guha ◽  
K. Srinivasa Rao
Keyword(s):  
Rf Mems ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Step Structure ◽  
K Band

scholarly journals A K-Band RF-MEMS-Enabled Reconfigurable and Multifunctional Low-Noise Amplifier Hybrid Circuit

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
R. Malmqvist ◽  
C. Samuelsson ◽  
A. Gustafsson ◽  
P. Rantakari ◽  
S. Reyaz ◽  
...  
Keyword(s):  
Rf Mems ◽  
Noise Figure ◽  
Low Noise ◽  
Small Signal Gain ◽  
Small Signal ◽  
Mems Switch ◽  
Noise Amplifier ◽  
Hybrid Circuit ◽  
24 Ghz ◽  
K Band

A K-band (18–26.5 GHz) RF-MEMS-enabled reconfigurable and multifunctional dual-path LNA hybrid circuit (optimised for lowest/highest possible noise figure/linearity, resp.) is presented, together with its subcircuit parts. The two MEMS-switched low-NF (higher gain) and high-linearity (lower gain) LNA circuits (paths) present 16.0 dB/8.2 dB, 2.8 dB/4.9 dB and 15 dBm/20 dBm of small-signal gain, noise figure, and 1 dB compression point at 24 GHz, respectively. Compared with the two (fixed) LNA subcircuits used within this design, the MEMS-switched LNA circuit functions show minimum 0.6–1.3 dB higher NF together with similar values ofP1 dBat 18–25 GHz. The gain of one LNA circuit path is reduced by 25–30 dB when the MEMS switch and active circuitry used within in the same switching branch are switched off to select the other LNA path and minimise power consumption.

K‐band RF‐MEMS uniplanar reconfigurable‐bandwidth bandpass filter using multimodal immittance inverters

2013 ◽  
Vol 49 (11) ◽  
pp. 704-706 ◽  
Author(s):  
A. Contreras ◽  
M. Ribó ◽  
L. Pradell ◽  
J. Casals‐Terré ◽  
F. Giacomozzi ◽  
...  
Keyword(s):  
Bandpass Filter ◽  
Rf Mems ◽  
K Band

RF-MEMS Switch and Phase Shifter Optimized for W-Band

2008 ◽  
Author(s):  
A. Stehle ◽  
G. Georgiev ◽  
V. Ziegler ◽  
B. Schoenlinner ◽  
U. Prechtel ◽  
...  
Keyword(s):  
Phase Shifter ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
W Band

Comprehensive Dynamic Model of a Viscously Damped RF-MEMS Switch Including Squeeze Film and Impact Force Effects

2013 ◽  
Vol 389 ◽  
pp. 660-667 ◽  
Author(s):  
Ameen H. El-Sinawi ◽  
Omar A. Awad ◽  
Abdulaziz H. El-Sinawi
Keyword(s):  
Rf Mems ◽  
Impact Force ◽  
Squeeze Film ◽  
Rf Mems Switch ◽  
New Approach ◽  
Mems Switch ◽  
Switch Structure ◽  
Proposed Model ◽  
Resonance Frequencies ◽  
The Impact

This work presents a new approach to modeling the dynamic behavior of a viscously damped RF-MEMS switch. The model takes into account the effect of squeeze film on resonance frequencies of the switch structure. It also presents a new approach to modeling the impact force as well as its effect on transient pull-in, and release dynamics of the perforated switch membrane. Simulation results of the proposed model are validated against experimental results of the same exact switch, and the comparison was impressive. Model results show that the model is able to capture the experimental behavior of the switch with less than 2% error.

Sign in / Sign up

Export Citation Format

Share Document