K‐band RF‐MEMS uniplanar reconfigurable‐bandwidth bandpass filter using multimodal immittance inverters

2013 ◽  
Vol 49 (11) ◽  
pp. 704-706 ◽  
Author(s):  
A. Contreras ◽  
M. Ribó ◽  
L. Pradell ◽  
J. Casals‐Terré ◽  
F. Giacomozzi ◽  
...  
Keyword(s):  
Rf Mems ◽  
2010 ◽  
Vol 46 (9) ◽  
pp. 640 ◽  
Author(s):  
J. Giner ◽  
A. Uranga ◽  
F. Torres ◽  
E. Marigó ◽  
N. Barniol

2009 ◽  
Author(s):  
V. Puyal ◽  
D. Dragomirescu ◽  
R. Plana
Keyword(s):  
Rf Mems ◽  
W Band ◽  

2021 ◽  
Author(s):  
Lulu Han ◽  
Yu Wang ◽  
Qiannan Wu ◽  
Shiyi Zhang ◽  
Shanshan Wang ◽  
...  

Author(s):  
K. Girija Sravani ◽  
Koushik Guha ◽  
K. Srinivasa Rao

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
R. Malmqvist ◽  
C. Samuelsson ◽  
A. Gustafsson ◽  
P. Rantakari ◽  
S. Reyaz ◽  
...  

A K-band (18–26.5 GHz) RF-MEMS-enabled reconfigurable and multifunctional dual-path LNA hybrid circuit (optimised for lowest/highest possible noise figure/linearity, resp.) is presented, together with its subcircuit parts. The two MEMS-switched low-NF (higher gain) and high-linearity (lower gain) LNA circuits (paths) present 16.0 dB/8.2 dB, 2.8 dB/4.9 dB and 15 dBm/20 dBm of small-signal gain, noise figure, and 1 dB compression point at 24 GHz, respectively. Compared with the two (fixed) LNA subcircuits used within this design, the MEMS-switched LNA circuit functions show minimum 0.6–1.3 dB higher NF together with similar values ofP1 dBat 18–25 GHz. The gain of one LNA circuit path is reduced by 25–30 dB when the MEMS switch and active circuitry used within in the same switching branch are switched off to select the other LNA path and minimise power consumption.


2015 ◽  
Author(s):  
Fabio Quaranta ◽  
Anna Persano ◽  
Giovanni Capoccia ◽  
Antonietta Taurino ◽  
Adriano Cola ◽  
...  

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