Non-chemically amplified negative resist for EUV lithography

2009 ◽  
Author(s):  
Masamitsu Shirai ◽  
Koichi Maki ◽  
Haruyuki Okamura ◽  
Koji Kanayama ◽  
Toshiro Itani
Keyword(s):  
Chemically Amplified ◽  
Euv Lithography

Lithographic performance and optimization of chemically amplified single-layer resists for EUV lithography

2000 ◽  
Author(s):  
Takeo Watanabe ◽  
Hiroo Kinoshita ◽  
Atsushi Miyafuji ◽  
Shigeo Irie ◽  
Shigeru Shirayone ◽  
...  
Keyword(s):  
Single Layer ◽  
Chemically Amplified ◽  
Euv Lithography

POSS-Containing Nanocomposite Materials for Next Generation Nanolithography

2007 ◽  
Vol 119 ◽  
pp. 299-302 ◽  
Author(s):  
Jae Hak Choi ◽  
Phil Hyun Kang ◽  
Young Chang Nho ◽  
Sung Kwon Hong
Keyword(s):  
Excimer Laser ◽  
Laser Scanner ◽  
Nanocomposite Materials ◽  
Matrix Polymer ◽  
Chemically Amplified ◽  
Euv Lithography ◽  
The Matrix ◽  
Krf Excimer Laser ◽  
Chemically Amplified Resists ◽  
Dry Etch

Nanocomposite materials based on poly(p-hydroxystyrene-co-2-methyl-2-adamantyl methacrylate-co-methacrylisobutyl-POSS) were synthesized and evaluated as EUV chemically amplified resists. Incorporation of 2-methyl-2-adamantyl and POSS groups into the matrix polymer made it possible to improve the dry-etch resistance, and excellent lithographic performance was obtained. The well-defined 250 nm positive patterns were obtained using a KrF excimer laser scanner, and 100 nm elbow patterns using an EUV lithography tool. The dry-etch resistance of this resist for a CF4-based plasma was comparable to that of poly(p-hydroxystyrene).

scholarly journals Reduction of the Outgassing Segment in Acetal based Chemically Amplified Resist for EUV Lithography

2006 ◽  
Vol 19 (4) ◽  
pp. 533-538 ◽  
Author(s):  
Seiya Masuda ◽  
Yasutomo Kawanishi ◽  
Shuuji Hirano ◽  
Sou Kamimura ◽  
Kazuyoshi Mizutani ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Euv Lithography ◽  
Chemically Amplified Resist

Formulation of trade-off relationships between resolution, line edge roughness, and sensitivity in sub-10 nm half-pitch region for chemically amplified extreme ultraviolet resists

2021 ◽  
Author(s):  
Takahiro KOZAWA
Keyword(s):  
Extreme Ultraviolet ◽  
Numerical Aperture ◽  
Line Edge Roughness ◽  
Chemical Gradient ◽  
Trade Off ◽  
Chemically Amplified ◽  
Optical Images ◽  
Euv Lithography ◽  
Edge Roughness ◽  
The Relationship

Abstract The manufacturing of semiconductor devices using extreme ultraviolet (EUV) lithography started in 2019. A high numerical aperture (NA) tool under development is capable of resolving 8 nm line-and-space optical images and will extend the application of EUV lithography. However, resist materials have not been yet applicable to the production with 8 nm resolution. In this study, the relationships among the half-pitch of line-and-space patterns (resolution), chemical gradient [an indicator of line edge roughness (LER)], and sensitivity were investigated in the sub-10 nm half-pitch region for chemically amplified EUV resists. The chemical gradient was simulated on the basis of their sensitization and reaction mechanisms. The relationship was formulated as a function of total sensitizer concentration (the sum of photoacid generator and photodecomposable quencher concentrations) and the thermalization distance of secondary electrons. The effect of thermalized electrons was well incorporated into the trade-off relationships between resolution, LER, and sensitivity.

Resist material options for extreme ultraviolet lithography

2015 ◽  
Vol 4 (4) ◽  
Author(s):  
Takahiro Kozawa
Keyword(s):  
Extreme Ultraviolet ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography ◽  
The Past ◽  
Chemically Amplified ◽  
Euv Lithography ◽  
Urgent Task ◽  
Chemically Amplified Resists

AbstractOwing to the worldwide efforts, the development of extreme ultraviolet (EUV) lithography has significantly progressed during the past decade. The resolution of chemically amplified resists has reached sub-16-nm region. From the viewpoint of the extendibility of EUV lithography, the development of resist materials capable of resolving sub-10-nm is an urgent task. In this review, the resist material options for EUV lithography are discussed on the basis of the EUV sensitization mechanisms after reviewing the problems for the sub-10-nm fabrication.

Patterning performance of chemically amplified resist in EUV lithography

2016 ◽  
Author(s):  
Tatsuya Fujii ◽  
Shogo Matsumaru ◽  
Tomotaka Yamada ◽  
Yoshitaka Komuro ◽  
Daisuke Kawana ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Euv Lithography ◽  
Chemically Amplified Resist

EUV lithography performance of negative-tone chemically amplified fullerene resist

2013 ◽  
Author(s):  
A. Frommhold ◽  
D. X. Yang ◽  
A. McClelland ◽  
X. Xue ◽  
R. E. Palmer ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Euv Lithography ◽  
Negative Tone

Chemically amplified resists resolving 25 nm 1:1 line: space features with EUV lithography

2007 ◽  
Author(s):  
James W. Thackeray ◽  
Roger A. Nassar ◽  
Robert Brainard ◽  
Dario Goldfarb ◽  
Thomas Wallow ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Euv Lithography ◽  
Chemically Amplified Resists ◽  
Line Space
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