Chemically amplified resists resolving 25 nm 1:1 line: space features with EUV lithography

2007 ◽  
Author(s):  
James W. Thackeray ◽  
Roger A. Nassar ◽  
Robert Brainard ◽  
Dario Goldfarb ◽  
Thomas Wallow ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Euv Lithography ◽  
Chemically Amplified Resists ◽  
Line Space

POSS-Containing Nanocomposite Materials for Next Generation Nanolithography

2007 ◽  
Vol 119 ◽  
pp. 299-302 ◽  
Author(s):  
Jae Hak Choi ◽  
Phil Hyun Kang ◽  
Young Chang Nho ◽  
Sung Kwon Hong
Keyword(s):  
Excimer Laser ◽  
Laser Scanner ◽  
Nanocomposite Materials ◽  
Matrix Polymer ◽  
Chemically Amplified ◽  
Euv Lithography ◽  
The Matrix ◽  
Krf Excimer Laser ◽  
Chemically Amplified Resists ◽  
Dry Etch

Nanocomposite materials based on poly(p-hydroxystyrene-co-2-methyl-2-adamantyl methacrylate-co-methacrylisobutyl-POSS) were synthesized and evaluated as EUV chemically amplified resists. Incorporation of 2-methyl-2-adamantyl and POSS groups into the matrix polymer made it possible to improve the dry-etch resistance, and excellent lithographic performance was obtained. The well-defined 250 nm positive patterns were obtained using a KrF excimer laser scanner, and 100 nm elbow patterns using an EUV lithography tool. The dry-etch resistance of this resist for a CF4-based plasma was comparable to that of poly(p-hydroxystyrene).

Resist material options for extreme ultraviolet lithography

2015 ◽  
Vol 4 (4) ◽  
Author(s):  
Takahiro Kozawa
Keyword(s):  
Extreme Ultraviolet ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography ◽  
The Past ◽  
Chemically Amplified ◽  
Euv Lithography ◽  
Urgent Task ◽  
Chemically Amplified Resists

AbstractOwing to the worldwide efforts, the development of extreme ultraviolet (EUV) lithography has significantly progressed during the past decade. The resolution of chemically amplified resists has reached sub-16-nm region. From the viewpoint of the extendibility of EUV lithography, the development of resist materials capable of resolving sub-10-nm is an urgent task. In this review, the resist material options for EUV lithography are discussed on the basis of the EUV sensitization mechanisms after reviewing the problems for the sub-10-nm fabrication.

Understanding the Exposure Process in the Extreme Ultra Violet Lithography

2021 ◽  
Vol 21 (8) ◽  
pp. 4466-4469
Author(s):  
Sang-Kon Kim
Keyword(s):  
Extreme Ultraviolet ◽  
Ultra Violet ◽  
Chemically Amplified ◽  
Euv Lithography ◽  
Metal Organic ◽  
Deep Ultraviolet ◽  
Chemically Amplified Resists ◽  
193 Nm ◽  
Physical And Chemical ◽  
Exposure Process

Although being the optical lithography, the extreme ultraviolet (EUV) lithography with 13.5-nm wavelength is very different from the deep ultraviolet (DUV) lithography with 193-nm wavelength. Hence, the understanding of the complex detailed EUV mechanisms to cause a chemical reaction in chemically amplified resists (CARs) is required to develop EUV resists and exposure process. In this paper, for organic, metal-organic and metal-oxide resists, the electron-scattering model of exposure mechanisms needs to include the elastic and inelastic mean free paths. On top of that, Dill’s parameters of DUV and EUV resisters from the photo-generated reaction are discussed to indicate the physical and chemical characteristics. For CAR and EUV resists, Dill B parameter is large than Dill A and B parameters.

Heating effect of the radiation chemistry of polyhydroxystyrene-type chemically amplified resists

2020 ◽  
Vol 59 (8) ◽  
pp. 086506
Author(s):  
Yuta Ikari ◽  
Kazumasa Okamoto ◽  
Akihiro Konda ◽  
Takahiro Kozawa ◽  
Takao Tamura
Keyword(s):  
Radiation Chemistry ◽  
Heating Effect ◽  
Chemically Amplified ◽  
Chemically Amplified Resists

Characterizing acid diffusion lengths in chemically amplified resists from measurements of deprotection kinetics

2014 ◽  
Vol 13 (4) ◽  
pp. 043017 ◽  
Author(s):  
Abhijit A. Patil ◽  
Yogendra Narayan Pandey ◽  
Manolis Doxastakis ◽  
Gila E. Stein
Keyword(s):  
Acid Diffusion ◽  
Chemically Amplified ◽  
Chemically Amplified Resists

Lithographic performance and optimization of chemically amplified single-layer resists for EUV lithography

2000 ◽  
Author(s):  
Takeo Watanabe ◽  
Hiroo Kinoshita ◽  
Atsushi Miyafuji ◽  
Shigeo Irie ◽  
Shigeru Shirayone ◽  
...  
Keyword(s):  
Single Layer ◽  
Chemically Amplified ◽  
Euv Lithography

Design and Lithographic Characteristics of Alicyclic Fluoropolymer for ArF Chemically Amplified Resists

2006 ◽  
Vol 45 (No. 46) ◽  
pp. L1230-L1231
Author(s):  
Katsumi Maeda ◽  
Kaichiro Nakano ◽  
Masamitsu Shirai
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resists
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