EUV lithography performance of negative-tone chemically amplified fullerene resist

2013 ◽  
Author(s):  
A. Frommhold ◽  
D. X. Yang ◽  
A. McClelland ◽  
X. Xue ◽  
R. E. Palmer ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Euv Lithography ◽  
Negative Tone

Lithographic performance and optimization of chemically amplified single-layer resists for EUV lithography

2000 ◽  
Author(s):  
Takeo Watanabe ◽  
Hiroo Kinoshita ◽  
Atsushi Miyafuji ◽  
Shigeo Irie ◽  
Shigeru Shirayone ◽  
...  
Keyword(s):  
Single Layer ◽  
Chemically Amplified ◽  
Euv Lithography

Resist composition effects on ultimate resolution of negative-tone chemically amplified resists

2001 ◽  
Author(s):  
Laurent Pain ◽  
C. Gourgon ◽  
K. Patterson ◽  
B. Scarfogliere ◽  
Serge V. Tedesco ◽  
...  
Keyword(s):  
Composition Effects ◽  
Chemically Amplified ◽  
Negative Tone ◽  
Chemically Amplified Resists

INR negative resist: a negative-tone I-line chemically amplified photoresist

1994 ◽  
Author(s):  
Leo L. Linehan ◽  
Gary T. Spinillo ◽  
Randolph S. Smith ◽  
Wayne M. Moreau ◽  
Barry C. McCormick ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Photoresist ◽  
Negative Tone

scholarly journals Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography

2014 ◽  
Vol 13 (4) ◽  
pp. 043002 ◽  
Author(s):  
Vikram Singh ◽  
Vardhineedi Sri Venkata Satyanarayana ◽  
Nikola Batina ◽  
Israel Morales Reyes ◽  
Satinder K. Sharma ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
Euv Lithography ◽  
Negative Tone

POSS-Containing Nanocomposite Materials for Next Generation Nanolithography

2007 ◽  
Vol 119 ◽  
pp. 299-302 ◽  
Author(s):  
Jae Hak Choi ◽  
Phil Hyun Kang ◽  
Young Chang Nho ◽  
Sung Kwon Hong
Keyword(s):  
Excimer Laser ◽  
Laser Scanner ◽  
Nanocomposite Materials ◽  
Matrix Polymer ◽  
Chemically Amplified ◽  
Euv Lithography ◽  
The Matrix ◽  
Krf Excimer Laser ◽  
Chemically Amplified Resists ◽  
Dry Etch

Nanocomposite materials based on poly(p-hydroxystyrene-co-2-methyl-2-adamantyl methacrylate-co-methacrylisobutyl-POSS) were synthesized and evaluated as EUV chemically amplified resists. Incorporation of 2-methyl-2-adamantyl and POSS groups into the matrix polymer made it possible to improve the dry-etch resistance, and excellent lithographic performance was obtained. The well-defined 250 nm positive patterns were obtained using a KrF excimer laser scanner, and 100 nm elbow patterns using an EUV lithography tool. The dry-etch resistance of this resist for a CF4-based plasma was comparable to that of poly(p-hydroxystyrene).

scholarly journals Reduction of the Outgassing Segment in Acetal based Chemically Amplified Resist for EUV Lithography

2006 ◽  
Vol 19 (4) ◽  
pp. 533-538 ◽  
Author(s):  
Seiya Masuda ◽  
Yasutomo Kawanishi ◽  
Shuuji Hirano ◽  
Sou Kamimura ◽  
Kazuyoshi Mizutani ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Euv Lithography ◽  
Chemically Amplified Resist

scholarly journals The Development of Chemically Amplified Positive- and Negative-tone Resists for DUV Lithography.

1994 ◽  
Vol 7 (3) ◽  
pp. 619-630 ◽  
Author(s):  
James W. Thackeray ◽  
Timothy Adams ◽  
Michael F. Cronin ◽  
Mark Denison ◽  
Theodore H. Fedynyshyn ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Negative Tone
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