Modeling pattern dependencies in the micron-scale embossing of polymeric layers

2008 ◽  
Author(s):  
Hayden Taylor ◽  
Ciprian Iliescu ◽  
Ming Ni ◽  
Chen Xing ◽  
Yee Cheong Lam ◽  
...  
Keyword(s):  
Pattern Dependencies

Evaluating the impact of design pattern and anti-pattern dependencies on changes and faults

2015 ◽  
Vol 21 (3) ◽  
pp. 896-931 ◽  
Author(s):  
Fehmi Jaafar ◽  
Yann-Gaël Guéhéneuc ◽  
Sylvie Hamel ◽  
Foutse Khomh ◽  
Mohammad Zulkernine
Keyword(s):  
Design Pattern ◽  
Pattern Dependencies ◽  
The Impact

Determination of the Planarization Distance for Copper CMP Process

1999 ◽  
Vol 566 ◽  
Author(s):  
S Hymes ◽  
K. Smekalin ◽  
T. Brown ◽  
H. Yeung ◽  
M. Joffe ◽  
...  
Keyword(s):  
Reduction Ratio ◽  
Step Height ◽  
Measurement Tool ◽  
Process Conditions ◽  
Height Reduction ◽  
Pattern Dependencies ◽  
Copper Cmp

A planarization monitor has been applied to the copper system to investigate pattern dependencies during copper overburden planarization. Conventional profilometry and a noncontact, acousto-optic measurement tool, the Insite 300, are utilized to quantify the planarization performance in terms of the defined step-height-reduction-ratio (SHRR). Illustrative results as a function of slurry, pad type and process conditions are presented. For a typical stiff-pad copper CMP process, we determined the planarization distance to be approximately 2mm.

Characterizing STI CMP Processes with an STI Test Mask Having Realistic Geometric Shapes

2004 ◽  
Vol 816 ◽  
Author(s):  
Xiaolin Xie ◽  
Tae Park ◽  
Duane Boning ◽  
Aaron Smith ◽  
Paul Allard ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Device Performance ◽  
Secondary Effects ◽  
Feature Size ◽  
Shallow Trench Isolation ◽  
Trench Isolation ◽  
Oxide Deposition ◽  
Pattern Dependencies ◽  
Small Feature ◽  
Ongoing Development

AbstractChemical mechanical polishing (CMP) has become the enabling planarization method for shallow trench isolation (STI) of sub 0.25μm technology. CMP is able to reduce topography over longer lateral distances than earlier techniques; however, CMP still suffers from pattern dependencies that result in large variation in the post-polish profile across a chip. In the STI process, insufficient polish will leave residue nitride and cause device failure, while excess dishing and erosion degrade device performance.Our group has proposed several chip-scale CMP pattern density models [1], and a methodology using designed dielectric CMP test mask to characterize CMP processes [2]. The methodology has proven helpful in understanding STI CMP; however, it has several limitations as the existing test mask primarily consists of arrays of lines and spaces of large feature size varying from 10 to 100 μm. In this paper, we present a new STI characterization mask, which consists of various rectangular, L-shape, and X-shape structures of feature sizes down to submicron. The mask is designed to study advanced STI CMP processes better, as it is more representative of real STI structures. The small feature size amplifies the effects of edge acceleration and oxide deposition bias, and thus enables us to study their impact better. Experimental data from an STI CMP process is shown to verify the methodology, and these secondary effects are explored. The new mask and data guide ongoing development of improved pattern dependent STI CMP models.

Modeling of Pattern Dependencies for Multi-Level Copper Chemical-Mechanical Polishing Processes

2001 ◽  
Vol 671 ◽  
Author(s):  
Tamba Tugbawa ◽  
Tae Park ◽  
Brian Lee ◽  
Duane Boning
Keyword(s):  
Experimental Data ◽  
Contact Mechanics ◽  
Long Range ◽  
Chemical Mechanical Polishing ◽  
Region Of Interest ◽  
Mechanical Polishing ◽  
Copper Interconnects ◽  
Pattern Dependencies ◽  
Multi Level ◽  
Polishing Pressure

ABSTRACTWepropose an integratedcontact mechanics and density-step-heightmodel of pattern dependencies for the chemical-mechanical polishing (CMP) of multi-level copper interconnects, and show preliminary comparisons with experimental data for the overburden copper removal stage. The model uses contact mechanics to correctly apportion polishing pressure on all sections of an envelop function that reflects the long-range thickness differences on the chip, or region of interest. With the pressure over the entire envelop known, the density-step-height part of the model is then used to compute the amount of material removed in the local “up-areas” and “down-areas”. ThismodelshowspromiseinaccuratelyandefficientlypredictingpostCMPcopperanddielectric thicknesses across an entire chip.

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