Residual photoresist removal from Si and GaAs surface atomic hydrogen flow treatment

2004 ◽  
Author(s):  
E. Anishchenko ◽  
V. Diamant ◽  
Valerii A. Kagadei ◽  
E. Nefeyodtsev ◽  
Konstantin V. Oskomov ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Gaas Surface ◽  
Hydrogen Flow ◽  
Flow Treatment

Measurement of atomic hydrogen flow density during GaAs surface cleaning

2008 ◽  
Author(s):  
V. A. Kagadei ◽  
E. V. Nefyodtsev ◽  
D. I. Proskurovski ◽  
S. V. Romanenko
Keyword(s):  
Atomic Hydrogen ◽  
Surface Cleaning ◽  
Gaas Surface ◽  
Flow Density ◽  
Hydrogen Flow

Residual-Photoresist Removal from Si and GaAs Surfaces by Atomic-Hydrogen Flow Treatment

2005 ◽  
Vol 34 (3) ◽  
pp. 131-139 ◽  
Author(s):  
E. V. Anishchenko ◽  
V. A. Kagadei ◽  
E. V. Nefedtsev ◽  
K. V. Oskomov ◽  
D. I. Proskurovski ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Flow ◽  
Flow Treatment

The effect of atomic hydrogen flow on electrical resistance of the transition metal films

2004 ◽  
Vol 113 (3) ◽  
pp. 293-300 ◽  
Author(s):  
V. Kagadei ◽  
E. Nefyodtsev ◽  
D. Proskurovsky ◽  
Sv. Romanenko ◽  
N. Shevchenko ◽  
...  
Keyword(s):  
Transition Metal ◽  
Electrical Resistance ◽  
Atomic Hydrogen ◽  
Metal Films ◽  
Hydrogen Flow

Effects of Substrate Temperature and Atomic Hydrogen Flow on the Mircocrystallinity of Evaporated Hydrogenated silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
A.J. Stoltz ◽  
Whitney Mason ◽  
J.D. Benson ◽  
J.H. Dinan ◽  
K. McCormack ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Atomic Hydrogen ◽  
High Vacuum ◽  
Electron Beam Evaporation ◽  
Ultra High Vacuum ◽  
Hydrogenated Silicon ◽  
Hydrogen Flow ◽  
A Value ◽  
Hydrogenated Amorphous

AbstractAs a first step toward an understanding of the chemical and structural role of hydrogen in hydrogenated amorphous silicon, we utilized electron beam evaporation in an ultra high vacuum environment to deposit films of amorphous silicon and systematically dosed these films with atomic hydrogen during deposition. Secondary Ion Mass Spectroscopy (SIMS) data indicated that hydrogen concentration can be varied from the detection limit of SIMS to a value in excess of 1021 atoms cm-3. The intentional addition of hydrogen caused the concentration to fall from in an excess of 1021 atoms*cm-3 to below 1018 atoms*cm-3.

Atomically flat (001)GaAs surface prepared by two-step atomic-hydrogen treatment and its application to heteroepitaxy of GaN

1998 ◽  
Vol 189-190 ◽  
pp. 265-269 ◽  
Author(s):  
Hajime Nagano ◽  
Zhixin Qin ◽  
Anwei Jia ◽  
Yoshinori Kato ◽  
Masakazu Kobayashi ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Gaas Surface ◽  
Hydrogen Treatment ◽  
Atomically Flat

Kinetics of Hydrogenation and Variations in Resistance of Vanadium Thin Films Treated in Atomic Hydrogen Flow

2003 ◽  
Vol 46 (11) ◽  
pp. 1151-1159
Author(s):  
V. A. Kagadei ◽  
E. V. Nefyodtsev ◽  
D. I. Proskurovsky ◽  
S. V. Romanenko ◽  
N. A. Shevchenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Hydrogen ◽  
Hydrogen Flow ◽  
Kinetics Of
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