Next generation electron beam lithography system F7000 for wide range applications

2013 ◽  
Author(s):  
Hirofumi Hayakawa ◽  
Masahiro Takizawa ◽  
Masaki Kurokawa ◽  
Akiyoshi Tsuda ◽  
Masami Takigawa ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Next Generation ◽  
Wide Range ◽  
Lithography System

Fast Electron Beam Lithography System with 1024 Beams Individually Controlled by Blanking Aperture Array

1993 ◽  
Vol 32 (Part 1, No. 12B) ◽  
pp. 6012-6017 ◽  
Author(s):  
Hiroshi Yasuda ◽  
Soichiro Arai ◽  
Jun-ichi Kai ◽  
Yoshihisa Ooae ◽  
Tomohiko Abe ◽  
...  
Keyword(s):  
Electron Beam ◽  
Fast Electron ◽  
Electron Beam Lithography ◽  
Fast Electron Beam ◽  
Aperture Array ◽  
Lithography System

In situ patterning of organic molecules in aqueous solutions using an inverted electron-beam lithography system

2016 ◽  
Vol 55 (6S1) ◽  
pp. 06GL07 ◽  
Author(s):  
Hiroki Miyazako ◽  
Kazuhiko Ishihara ◽  
Kunihiko Mabuchi ◽  
Takayuki Hoshino
Keyword(s):  
Electron Beam ◽  
Aqueous Solutions ◽  
Electron Beam Lithography ◽  
Organic Molecules ◽  
Lithography System

High Resolution Resists for Next Generation Lithography: The Nanocomposite Approach

2000 ◽  
Vol 636 ◽  
Author(s):  
Kenneth E. Gonsalves ◽  
Hengpeng Wu ◽  
Yongqi Hu ◽  
Lhadi Merhari
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Ion Beam ◽  
Proximity Effects ◽  
Next Generation ◽  
Polyhedral Oligosilsesquioxane ◽  
Ion Beam Lithography ◽  
New Class ◽  
Next Generation Lithography

AbstractThe SIA roadmap predicts mass production of sub-100 nm resolution circuits by 2006. This not only imposes major constraints on next generation lithographic tools but also requires that new resists capable of accommodating such a high resolution be synthesized and developed concurrently. Except for ion beam lithography, DUV, X-ray, and in particular electron beam lithography suffer significantly from proximity effects, leading to severe degradation of resolution in classical resists. We report a new class of resists based on organic/inorganic nanocomposites having a structure that reduces the proximity effects. Synthetic routes are described for a ZEP520®nano-SiO2 resist where 47nm wide lines have been written with a 40 nm diameter, 20 keV electron beam at no sensitivity cost. Other resist systems based on polyhedral oligosilsesquioxane copolymerized with MMA, TBMA, MMA and a proprietary PAG are also presented. These nanocomposite resists suitable for DUV and electron beam lithography show enhancement in both contrast and RIE resistance in oxygen. Tentative mechanisms responsible for proximity effect reduction are also discussed.

Variably shaped electron beam lithography system, EB55: I. System design

1981 ◽  
Vol 19 (4) ◽  
pp. 941-945 ◽  
Author(s):  
M. Fujinami ◽  
T. Matsuda ◽  
K. Takamoto ◽  
H. Yoda ◽  
T. Ishiga ◽  
...  
Keyword(s):  
Electron Beam ◽  
System Design ◽  
Electron Beam Lithography ◽  
Lithography System
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