Fabrication and characterization of TO packaged high-speed laser modules

2007 ◽  
Author(s):  
Ji Min Wen ◽  
Yu Liu ◽  
Xin Wang ◽  
Hai Qing Yuan ◽  
Liang Xie ◽  
...  
2015 ◽  
Vol 24 (10) ◽  
pp. 108506
Author(s):  
Qing-Tao Chen ◽  
Yong-Qing Huang ◽  
Jia-Rui Fei ◽  
Xiao-Feng Duan ◽  
Kai Liu ◽  
...  

Sensors ◽  
2018 ◽  
Vol 18 (9) ◽  
pp. 2800 ◽  
Author(s):  
Jheng-Jie Liu ◽  
Wen-Jeng Ho ◽  
Cho-Chun Chiang ◽  
Chi-Jen Teng ◽  
Chia-Chun Yu ◽  
...  

This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, charge, and multiplication (SAGCM) epitaxial-structure. An electric field-profile of the SAGCM layers was derived from the epitaxial structure. The punch-through voltage of the SAGCM APD was controlled to within 16–17 V, whereas the breakdown voltage (VBR) was controlled to within 28–29 V. We obtained dark current of 2.99 nA, capacitance of 0.226 pF, and multiplication gain of 12, when the APD was biased at 0.9 VBR at room temperature. The frequency-response was characterized by comparing the calculated 3-dB cut-off modulation-frequency (f3-dB) and f3-dB values measured under various multiplication gains and modulated incident powers. The time-response of the APD was evaluated by deriving eye-diagrams at 0.9 VBR using pseudorandom non-return to zero codes with a length of 231-1 at 10–12.5 Gbps. There was a notable absence of intersymbol-interference, and the signals remained error-free at data-rates of up to 12.5 Gbps. The correlation between the rise-time and modulated-bandwidth demonstrate the suitability of the proposed SAGCM-APD chip for applications involving an optical-receiver at data-rates of >10 Gbps.


1999 ◽  
Author(s):  
Kevin T. Gahagan ◽  
Venkatraman Gopalan ◽  
Jeanne M. Robinson ◽  
Quanxi Jia ◽  
T. E. Mitchell ◽  
...  

2019 ◽  
Vol 16 (7) ◽  
pp. 5-14 ◽  
Author(s):  
G. A. Keeler ◽  
D. K. Serkland ◽  
M. Overberg ◽  
J. F. Klem ◽  
K. M. Geib ◽  
...  

2012 ◽  
Vol 49 (2) ◽  
pp. 022301
Author(s):  
刘少卿 Liu Shaoqing ◽  
韩勤 Han Qin ◽  
杨晓红 Yang Xiaohong ◽  
刘宇 Liu Yu ◽  
王杰 Wang Jie ◽  
...  

2020 ◽  
Vol 91 (1) ◽  
pp. 10301
Author(s):  
Zhi Yang ◽  
Guoqiang Zheng ◽  
Peng Zhu ◽  
Cong Xu ◽  
Qiu Zhang ◽  
...  

Parallel bridge foils (PBF) with four strip foils, which is derived from traditional single bridge foil (SBF), was designed to study the effect of convergence and collision of plasmas and shock waves on driving flyer. Firstly, Electro-thermal simulation of PBF was performed to analyze temperature distribution before melting, which predicted the synchronous burst characteristic of PBF. Subsequently, a capacitor discharging circuit was designed to initiate bridge foils, results indicated PBF reached higher burst power in shorter time compared with SBF due to better matching between PBF and the test circuit. The flow fields of electrical explosion of bridge foils were photographed by ultra-high-speed camera, which displayed PBF almost burst simultaneously. Moreover, PBF had wider and brighter flow field visualization than SBF owing to convergence and superposition of plasma beams. Most importantly, flyer-accelerators inserted with bridge foils were prepared by MEMS technology, and comparative analysis from PDV revealed MEMS flyer-accelerator inserted with PBF had access to better velocity performances, compared with that inserted with SBF. For instance, PBF flyer-accelerator spent mere 168 ns to 2325 m/s at 900 V/0.22 µF, but SBF flyer-accelerator took 335 ns to 1073 m/s. Finally, we proposed a mathematical model for explaining the enhancement effect of flyer velocity, which to some extent showed good agreement with experimentation.


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