scholarly journals Fabrication and characterization of high-speed integrated electro-optic lens and scanner devices

1999 ◽  
Author(s):  
Kevin T. Gahagan ◽  
Venkatraman Gopalan ◽  
Jeanne M. Robinson ◽  
Quanxi Jia ◽  
T. E. Mitchell ◽  
...  
Keyword(s):  
High Speed ◽  
Electro Optic ◽  
Fabrication And Characterization

Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity

2015 ◽  
Vol 24 (10) ◽  
pp. 108506
Author(s):  
Qing-Tao Chen ◽  
Yong-Qing Huang ◽  
Jia-Rui Fei ◽  
Xiao-Feng Duan ◽  
Kai Liu ◽  
...  
Keyword(s):  
High Speed ◽  
High Responsivity ◽  
Fabrication And Characterization

scholarly journals Design and Characterization of Traveling-wave Electrodes for InP-based Rectangular Mach-Zehnder High Speed Electro-optic Modulators

2017 ◽  
Vol 46 (5) ◽  
pp. 523002
Author(s):  
赵丽亚 ZHAO Li-ya ◽  
王乐 WANG Le ◽  
杨妍 YANG Yan ◽  
刘克 LIU Ke
Keyword(s):  
Traveling Wave ◽  
High Speed ◽  
Electro Optic

scholarly journals Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps

Sensors ◽  
2018 ◽  
Vol 18 (9) ◽  
pp. 2800 ◽  
Author(s):  
Jheng-Jie Liu ◽  
Wen-Jeng Ho ◽  
Cho-Chun Chiang ◽  
Chi-Jen Teng ◽  
Chia-Chun Yu ◽  
...  
Keyword(s):  
High Speed ◽  
Room Temperature ◽  
Modulation Frequency ◽  
Dynamic Performance ◽  
Epitaxial Structure ◽  
Data Rates ◽  
Conductive Substrate ◽  
Fabrication And Characterization ◽  
Electric Field Profile

This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, charge, and multiplication (SAGCM) epitaxial-structure. An electric field-profile of the SAGCM layers was derived from the epitaxial structure. The punch-through voltage of the SAGCM APD was controlled to within 16–17 V, whereas the breakdown voltage (VBR) was controlled to within 28–29 V. We obtained dark current of 2.99 nA, capacitance of 0.226 pF, and multiplication gain of 12, when the APD was biased at 0.9 VBR at room temperature. The frequency-response was characterized by comparing the calculated 3-dB cut-off modulation-frequency (f3-dB) and f3-dB values measured under various multiplication gains and modulated incident powers. The time-response of the APD was evaluated by deriving eye-diagrams at 0.9 VBR using pseudorandom non-return to zero codes with a length of 231-1 at 10–12.5 Gbps. There was a notable absence of intersymbol-interference, and the signals remained error-free at data-rates of up to 12.5 Gbps. The correlation between the rise-time and modulated-bandwidth demonstrate the suitability of the proposed SAGCM-APD chip for applications involving an optical-receiver at data-rates of >10 Gbps.

Electro-optic and dielectric characterization of ferroelectric films for high-speed optical waveguide modulators

2011 ◽  
Vol 109 (12) ◽  
pp. 124108 ◽  
Author(s):  
Shin Masuda ◽  
Atsushi Seki ◽  
Kazunori Shiota ◽  
Hideo Hara ◽  
Yoichiro Masuda
Keyword(s):  
Optical Waveguide ◽  
High Speed ◽  
Ferroelectric Films ◽  
Dielectric Characterization ◽  
Electro Optic ◽  
Waveguide Modulators

Fabrication and characterization of single-mode electro-optic polymer optical fiber

1998 ◽  
Vol 23 (23) ◽  
pp. 1826 ◽  
Author(s):  
David J. Welker ◽  
Jeff Tostenrude ◽  
Dennis W. Garvey ◽  
Brian K. Canfield ◽  
Mark G. Kuzyk
Keyword(s):  
Optical Fiber ◽  
Single Mode ◽  
Polymer Optical Fiber ◽  
Electro Optic ◽  
Fabrication And Characterization

GaAs/GaAlAs MULTIQUANTUM WELL ELECTROABSORPTION REFLECTION MODULATOR AND SELF ELECTRO-OPTIC EFFECT DEVICE (SEED)

1996 ◽  
Vol 07 (03) ◽  
pp. 399-407
Author(s):  
RONGHAN WU ◽  
WENZHI GAO ◽  
JUN ZHAO ◽  
ZHIBIAO CHEN ◽  
SHIMING LIN ◽  
...  
Keyword(s):  
Stark Effect ◽  
Optical Switch ◽  
Contrast Ratio ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Quantum Confined Stark Effect ◽  
Electro Optic ◽  
Fabry Perot ◽  
Fabrication And Characterization

GaAs/GaAlAs MQW reflection modulators and SEED have been investigated. The analysis is emphasized on the combined behaviors of quantum confined Stark effect (QCSE), distributed Bragg reflector (DBR), and different asymmetric Fabry–Perot cavities (ASFP). Experimental results include the fabrication and characterization of a modulator array with a contrast ratio of about 10 dB and S-SEED array with optical switch energy less than 10 fJ /(µ m )2. An application of a modulator array in microoptical interconnection module is also demonstrated.

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