scholarly journals Growth, Fabrication, and Characterization of High-Speed 1550-nm S-SEEDs for All-Optical Logic

2019 ◽  
Vol 16 (7) ◽  
pp. 5-14 ◽  
Author(s):  
G. A. Keeler ◽  
D. K. Serkland ◽  
M. Overberg ◽  
J. F. Klem ◽  
K. M. Geib ◽  
...  
Keyword(s):  
High Speed ◽  
Optical Logic ◽  
All Optical ◽  
Fabrication And Characterization

scholarly journals Fabrication and Characterization of Arrays of GaAs All-Optical Logic Gates

1986 ◽  
pp. 39-41
Author(s):  
M. Warren ◽  
Y. H. Lee ◽  
G. R. Olbright ◽  
B. P. McGinnis ◽  
H. M. Gibbs ◽  
...  
Keyword(s):  
Logic Gates ◽  
Optical Logic ◽  
Optical Logic Gates ◽  
All Optical ◽  
Fabrication And Characterization

Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity

2015 ◽  
Vol 24 (10) ◽  
pp. 108506
Author(s):  
Qing-Tao Chen ◽  
Yong-Qing Huang ◽  
Jia-Rui Fei ◽  
Xiao-Feng Duan ◽  
Kai Liu ◽  
...  
Keyword(s):  
High Speed ◽  
High Responsivity ◽  
Fabrication And Characterization

scholarly journals Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps

Sensors ◽  
2018 ◽  
Vol 18 (9) ◽  
pp. 2800 ◽  
Author(s):  
Jheng-Jie Liu ◽  
Wen-Jeng Ho ◽  
Cho-Chun Chiang ◽  
Chi-Jen Teng ◽  
Chia-Chun Yu ◽  
...  
Keyword(s):  
High Speed ◽  
Room Temperature ◽  
Modulation Frequency ◽  
Dynamic Performance ◽  
Epitaxial Structure ◽  
Data Rates ◽  
Conductive Substrate ◽  
Fabrication And Characterization ◽  
Electric Field Profile

This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, charge, and multiplication (SAGCM) epitaxial-structure. An electric field-profile of the SAGCM layers was derived from the epitaxial structure. The punch-through voltage of the SAGCM APD was controlled to within 16–17 V, whereas the breakdown voltage (VBR) was controlled to within 28–29 V. We obtained dark current of 2.99 nA, capacitance of 0.226 pF, and multiplication gain of 12, when the APD was biased at 0.9 VBR at room temperature. The frequency-response was characterized by comparing the calculated 3-dB cut-off modulation-frequency (f3-dB) and f3-dB values measured under various multiplication gains and modulated incident powers. The time-response of the APD was evaluated by deriving eye-diagrams at 0.9 VBR using pseudorandom non-return to zero codes with a length of 231-1 at 10–12.5 Gbps. There was a notable absence of intersymbol-interference, and the signals remained error-free at data-rates of up to 12.5 Gbps. The correlation between the rise-time and modulated-bandwidth demonstrate the suitability of the proposed SAGCM-APD chip for applications involving an optical-receiver at data-rates of >10 Gbps.

scholarly journals High Speed All Optical Logic Operations Utilizing the Protein Bacteriorhodopsin

2014 ◽  
Vol 106 (2) ◽  
pp. 421a
Author(s):  
László Fábián ◽  
Anna Mathesz ◽  
Sándor Valkai ◽  
Daniel Alexandre ◽  
Paulo V.S. Marques ◽  
...  
Keyword(s):  
High Speed ◽  
Optical Logic ◽  
All Optical ◽  
Logic Operations

High Speed All Optical Logic Gates Using Binary Phase Shift Keyed Signal Based On QD-SOA

2015 ◽  
Vol 24 (03n04) ◽  
pp. 1550005 ◽  
Author(s):  
Wenbo Li ◽  
Hongyu Hu ◽  
Xiang Zhang ◽  
Niloy K. Dutta
Keyword(s):  
Phase Shift ◽  
High Speed ◽  
Logic Gates ◽  
Boolean Logic ◽  
Rate Equations ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Optical Logic ◽  
Binary Phase ◽  
All Optical

A scheme to realize all-optical Boolean logic functions, XOR, AND and NAND operations using binary phase shift keyed (BPSK) signal based on quantum-dot semiconductor optical amplifiers (QD-SOA) has been designed and studied. Nonlinear dynamics including carrier heating and spectral hole-burning are taken into account together with the rate equations. We demonstrate XOR, AND and NAND operations at 250Gb/s using a pair of QD-SOA Mach-Zehnder interferometers. Results show that this scheme is suitable for high speed all-optical Boolean logic operations and can improve the output quality comparing with the system using on-off-keyed (OOK) signal.

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