The design, fabrication and characterization of an advanced graphite composite structure for high speed rotating machines

1999 ◽  
Vol 35 (1) ◽  
pp. 307-311 ◽  
Author(s):  
S. Rosenwasser ◽  
G. Nagy ◽  
G. Mehle
Keyword(s):  
Composite Structure ◽  
High Speed ◽  
Rotating Machines ◽  
Graphite Composite ◽  
Fabrication And Characterization

Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity

2015 ◽  
Vol 24 (10) ◽  
pp. 108506
Author(s):  
Qing-Tao Chen ◽  
Yong-Qing Huang ◽  
Jia-Rui Fei ◽  
Xiao-Feng Duan ◽  
Kai Liu ◽  
...  
Keyword(s):  
High Speed ◽  
High Responsivity ◽  
Fabrication And Characterization

scholarly journals Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps

Sensors ◽  
2018 ◽  
Vol 18 (9) ◽  
pp. 2800 ◽  
Author(s):  
Jheng-Jie Liu ◽  
Wen-Jeng Ho ◽  
Cho-Chun Chiang ◽  
Chi-Jen Teng ◽  
Chia-Chun Yu ◽  
...  
Keyword(s):  
High Speed ◽  
Room Temperature ◽  
Modulation Frequency ◽  
Dynamic Performance ◽  
Epitaxial Structure ◽  
Data Rates ◽  
Conductive Substrate ◽  
Fabrication And Characterization ◽  
Electric Field Profile

This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, charge, and multiplication (SAGCM) epitaxial-structure. An electric field-profile of the SAGCM layers was derived from the epitaxial structure. The punch-through voltage of the SAGCM APD was controlled to within 16–17 V, whereas the breakdown voltage (VBR) was controlled to within 28–29 V. We obtained dark current of 2.99 nA, capacitance of 0.226 pF, and multiplication gain of 12, when the APD was biased at 0.9 VBR at room temperature. The frequency-response was characterized by comparing the calculated 3-dB cut-off modulation-frequency (f3-dB) and f3-dB values measured under various multiplication gains and modulated incident powers. The time-response of the APD was evaluated by deriving eye-diagrams at 0.9 VBR using pseudorandom non-return to zero codes with a length of 231-1 at 10–12.5 Gbps. There was a notable absence of intersymbol-interference, and the signals remained error-free at data-rates of up to 12.5 Gbps. The correlation between the rise-time and modulated-bandwidth demonstrate the suitability of the proposed SAGCM-APD chip for applications involving an optical-receiver at data-rates of >10 Gbps.

scholarly journals Fabrication and characterization of high-speed integrated electro-optic lens and scanner devices

1999 ◽  
Author(s):  
Kevin T. Gahagan ◽  
Venkatraman Gopalan ◽  
Jeanne M. Robinson ◽  
Quanxi Jia ◽  
T. E. Mitchell ◽  
...  
Keyword(s):  
High Speed ◽  
Electro Optic ◽  
Fabrication And Characterization

Fabrication and characterization of TO packaged high-speed laser modules

2007 ◽  
Author(s):  
Ji Min Wen ◽  
Yu Liu ◽  
Xin Wang ◽  
Hai Qing Yuan ◽  
Liang Xie ◽  
...  
Keyword(s):  
High Speed ◽  
Fabrication And Characterization

scholarly journals Growth, Fabrication, and Characterization of High-Speed 1550-nm S-SEEDs for All-Optical Logic

2019 ◽  
Vol 16 (7) ◽  
pp. 5-14 ◽  
Author(s):  
G. A. Keeler ◽  
D. K. Serkland ◽  
M. Overberg ◽  
J. F. Klem ◽  
K. M. Geib ◽  
...  
Keyword(s):  
High Speed ◽  
Optical Logic ◽  
All Optical ◽  
Fabrication And Characterization
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