Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography

Mapping Intimacies ◽

10.1117/12.772174 ◽

2008 ◽

Cited By ~ 1

Author(s):

Akinori Saeki ◽

Takahiro Kozawa ◽

Seiichi Tagawa ◽

Heidi B. Cao ◽

Hai Deng ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Optical Lithography ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist ◽

On Line

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Line edge roughness after development in a positive-tone chemically amplified resist of post-optical lithography investigated by Monte Carlo simulation and a dissolution model

Nanotechnology ◽

10.1088/0957-4484/19/01/015705 ◽

2007 ◽

Vol 19 (1) ◽

pp. 015705 ◽

Cited By ~ 13

Author(s):

Akinori Saeki ◽

Takahiro Kozawa ◽

Seiichi Tagawa ◽

Heidi B Cao ◽

Hai Deng ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Optical Lithography ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist ◽

Dissolution Model

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Relationship between Resolution, Line Edge Roughness, and Sensitivity in Chemically Amplified Resist of Post-Optical Lithography Revealed by Monte Carlo and Dissolution Simulations

Applied Physics Express ◽

10.1143/apex.2.075006 ◽

2009 ◽

Vol 2 ◽

pp. 075006 ◽

Cited By ~ 5

Author(s):

Akinori Saeki ◽

Takahiro Kozawa ◽

Seiichi Tagawa

Keyword(s):

Monte Carlo ◽

Optical Lithography ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist

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Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.086504 ◽

2012 ◽

Vol 51 (8R) ◽

pp. 086504 ◽

Cited By ~ 25

Author(s):

Takahiro Kozawa

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Stochastic Effect ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resists

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Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.086504 ◽

2012 ◽

Vol 51 ◽

pp. 086504 ◽

Cited By ~ 10

Author(s):

Takahiro Kozawa

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Stochastic Effect ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resists

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Effect of molecular weight and protection ratio on line edge roughness and stochastic defect generation in chemically amplified resist processes of extreme ultraviolet lithography

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.084002 ◽

2014 ◽

Vol 53 (8) ◽

pp. 084002 ◽

Cited By ~ 2

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Molecular Weight ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist ◽

On Line ◽

Protection Ratio

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Monte Carlo simulation of gel formation and surface and line-edge roughness in negative tone chemically amplified resists

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1542616 ◽

2003 ◽

Vol 21 (1) ◽

pp. 254 ◽

Cited By ~ 4

Author(s):

G. P. Patsis ◽

N. Glezos ◽

E. Gogolides

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Gel Formation ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

Negative Tone ◽

Chemically Amplified Resists

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Effects of deprotonation efficiency of protected units on line edge roughness and stochastic defect generation in chemically amplified resist processes for 11 nm node of extreme ultraviolet lithography

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.116504 ◽

2014 ◽

Vol 53 (11) ◽

pp. 116504 ◽

Cited By ~ 1

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Defect Generation ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist ◽

On Line

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Correlation between proton dynamics and line edge roughness in chemically amplified resist for post-optical lithography

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2393250 ◽

2006 ◽

Vol 24 (6) ◽

pp. 3066 ◽

Cited By ~ 14

Author(s):

Akinori Saeki ◽

Takahiro Kozawa ◽

Seiichi Tagawa ◽

Heidi B. Cao

Keyword(s):

Optical Lithography ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist ◽

Proton Dynamics

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Relationship between Line Edge Roughness and Fluctuation of Acid Concentration in Chemically Amplified Resist

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.096506 ◽

2010 ◽

Vol 49 (9) ◽

pp. 096506 ◽

Cited By ~ 3

Author(s):

Takahiro Kozawa ◽

Hiroki Yamamoto ◽

Seiichi Tagawa

Keyword(s):

Acid Concentration ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist

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A study of line edge roughness in chemically amplified resist for low energy electron-beam lithography

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) ◽

10.1109/imnc.2001.984209 ◽

2002 ◽

Author(s):

T. Nakasugi ◽

A. Ando ◽

R. Inanami ◽

N. Sasaki ◽

K. Sugihara

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Low Energy ◽

Energy Electron ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist ◽

Low Energy Electron

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