Erbium doped silicon rich silicon oxide luminescent thin films deposited by ECR-PECVD

2005 ◽  
Author(s):  
D. Blakie ◽  
O. H. Y. Zalloum ◽  
J. Wojcik ◽  
E. J. Irving ◽  
A. P. Knights ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Oxide ◽  
Erbium Doped ◽  
Doped Silicon

Coupled luminescence centres in erbium-doped silicon rich silicon oxide thin films

2006 ◽  
Author(s):  
D. E. Blakie ◽  
O. H. Y. Zalloum ◽  
J. Wojcik ◽  
E. J. Irving ◽  
A. P. Knights ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Oxide ◽  
Oxide Thin Films ◽  
Erbium Doped ◽  
Doped Silicon

scholarly journals Effects of the thickness on the properties of erbium-doped silicon-rich silicon oxide thin films

2011 ◽  
Vol 8 (3) ◽  
pp. 1027-1032 ◽  
Author(s):  
Sébastien Cueff ◽  
Christophe Labbé ◽  
Julien Cardin ◽  
Khalil Hijazi ◽  
Jean-Louis Doualan ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Oxide ◽  
Oxide Thin Films ◽  
Erbium Doped ◽  
Doped Silicon

Facile Fabrication Procedure for C60-Doped Silicon Oxide Thin Films

1997 ◽  
Vol 26 (10) ◽  
pp. 995-996 ◽  
Author(s):  
Isao Hasegawa ◽  
Koji Shibusa ◽  
Satoshi Kobayashi ◽  
Shuichi Nonomura ◽  
Shoji Nitta
Keyword(s):  
Thin Films ◽  
Silicon Oxide ◽  
Oxide Thin Films ◽  
Doped Silicon ◽  
Fabrication Procedure ◽  
Facile Fabrication

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

Luminescence of Er-doped silicon oxide–zirconia thin films

2009 ◽  
Vol 129 (7) ◽  
pp. 696-703 ◽  
Author(s):  
Carlos Rozo ◽  
Luis F. Fonseca ◽  
Daniel Jaque ◽  
José García Solé
Keyword(s):  
Thin Films ◽  
Silicon Oxide ◽  
Doped Silicon ◽  
Er Doped

1.54 μm Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide

2000 ◽  
Vol 88 (4) ◽  
pp. 2160-2162 ◽  
Author(s):  
Hak-Seung Han ◽  
Se-Young Seo ◽  
Jung H. Shin ◽  
Dong-Su Kim
Keyword(s):  
Silicon Oxide ◽  
Erbium Doped ◽  
Doped Silicon

Europium Doped Silicon Oxide Thin Films Using an Integrated PECVD and Sputtering System

2020 ◽  
Vol MA2020-02 (42) ◽  
pp. 2749-2749
Author(s):  
Rashin Basiri Namin ◽  
Peter Mascher ◽  
Zahra Khatami
Keyword(s):  
Thin Films ◽  
Silicon Oxide ◽  
Oxide Thin Films ◽  
Doped Silicon ◽  
Sputtering System
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