Silicon flip-chip imaging with a resolution of 325-nm using solid-immersion lenses and the two-photon optical-beam induced current method

2006 ◽  
Author(s):  
Euan Ramsay ◽  
Nicholas Pleynet ◽  
Dong Xiao ◽  
Richard J. Warburton ◽  
Derryck T. Reid
Keyword(s):  
Flip Chip ◽  
Current Method ◽  
Optical Beam ◽  
Induced Current ◽  
Two Photon ◽  
Optical Beam Induced Current

Three-Dimensional Nanometric Sub-Surface Imaging of a Silicon Flip-Chip Using the Two-Photon Optical Beam Induced Current Method

2007 ◽  
Author(s):  
E. Ramsay ◽  
K. A. Serrels ◽  
M. J. Thomson ◽  
A. J. Waddie ◽  
R. J. Warburton ◽  
...  
Keyword(s):  
Flip Chip ◽  
Three Dimensional ◽  
Current Method ◽  
Optical Beam ◽  
Lateral Resolution ◽  
Surface Imaging ◽  
Induced Current ◽  
Axial Resolution ◽  
Two Photon ◽  
Optical Beam Induced Current

Abstract By implementing two-photon optical-beam-induced current microscopy using a solid-immersion lens, imaging inside a silicon flip chip is reported with 166nm lateral resolution and an axial resolution capable of resolving features only 100nm in height.

Three-dimensional nanometric sub-surface imaging of a silicon flip-chip using the two-photon optical beam induced current method

2007 ◽  
Vol 47 (9-11) ◽  
pp. 1534-1538 ◽  
Author(s):  
E. Ramsay ◽  
K.A. Serrels ◽  
M.J. Thomson ◽  
A.J. Waddie ◽  
R.J. Warburton ◽  
...  
Keyword(s):  
Flip Chip ◽  
Three Dimensional ◽  
Current Method ◽  
Optical Beam ◽  
Surface Imaging ◽  
Induced Current ◽  
Two Photon ◽  
Optical Beam Induced Current

Two-photon optical-beam-induced current solid-immersion imaging of a silicon flip chip with a resolution of 325 nm

2005 ◽  
Vol 30 (1) ◽  
pp. 26 ◽  
Author(s):  
E. Ramsay ◽  
N. Pleynet ◽  
D. Xiao ◽  
R. J. Warburton ◽  
D. T. Reid
Keyword(s):  
Flip Chip ◽  
Optical Beam ◽  
Induced Current ◽  
Two Photon ◽  
Optical Beam Induced Current

Photo-Leakage-Current Analysis of Poly-Si TFT by Using Rear Irradiation OBIC Method

1998 ◽  
Vol 507 ◽  
Author(s):  
Masatoshi Wakagi ◽  
Tatsuya Ookubo ◽  
Masahiko Ando ◽  
Genshiro Kawachi ◽  
Akio Mimura ◽  
...  
Keyword(s):  
Leakage Current ◽  
Current Method ◽  
Optical Beam ◽  
Induced Current ◽  
Current Analysis ◽  
Low Concentration ◽  
Drain Electrode ◽  
Lightly Doped Drain ◽  
Optical Beam Induced Current

ABSTRACTPhoto-leakage-current of poly-Si (polycrystalline Si) TFFs has been investigated by using the rear irradiation OBIC (Optical Beam Induced Current) method. In the case of the offset gate TFIs, it was found that the photo-leakage-current was generated in the offset region of the drain electrode side. In order to reduce the photo-leakage-current, low concentration phosphor (P) was doped in the offset region, which corresponds to LDD (Lightly Doped Drain) structure. In the LDD TFT, the photo leakage current at the offset region decreased remarkably, because of the reduction of hole transportation in this region.

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