Photo-Leakage-Current Analysis of Poly-Si TFT by Using Rear Irradiation OBIC Method

1998 ◽  
Vol 507 ◽  
Author(s):  
Masatoshi Wakagi ◽  
Tatsuya Ookubo ◽  
Masahiko Ando ◽  
Genshiro Kawachi ◽  
Akio Mimura ◽  
...  
Keyword(s):  
Leakage Current ◽  
Current Method ◽  
Optical Beam ◽  
Induced Current ◽  
Current Analysis ◽  
Low Concentration ◽  
Drain Electrode ◽  
Lightly Doped Drain ◽  
Optical Beam Induced Current

ABSTRACTPhoto-leakage-current of poly-Si (polycrystalline Si) TFFs has been investigated by using the rear irradiation OBIC (Optical Beam Induced Current) method. In the case of the offset gate TFIs, it was found that the photo-leakage-current was generated in the offset region of the drain electrode side. In order to reduce the photo-leakage-current, low concentration phosphor (P) was doped in the offset region, which corresponds to LDD (Lightly Doped Drain) structure. In the LDD TFT, the photo leakage current at the offset region decreased remarkably, because of the reduction of hole transportation in this region.

A time-resolved optical beam induced current method

1990 ◽  
Vol 12 (1-4) ◽  
pp. 143-148 ◽  
Author(s):  
Harald Bergner ◽  
Tobias Damm ◽  
Uwe Stamm ◽  
Klaus-Peter Stolberg
Keyword(s):  
Current Method ◽  
Optical Beam ◽  
Induced Current ◽  
Time Resolved ◽  
Optical Beam Induced Current

Three-Dimensional Nanometric Sub-Surface Imaging of a Silicon Flip-Chip Using the Two-Photon Optical Beam Induced Current Method

2007 ◽  
Author(s):  
E. Ramsay ◽  
K. A. Serrels ◽  
M. J. Thomson ◽  
A. J. Waddie ◽  
R. J. Warburton ◽  
...  
Keyword(s):  
Flip Chip ◽  
Three Dimensional ◽  
Current Method ◽  
Optical Beam ◽  
Lateral Resolution ◽  
Surface Imaging ◽  
Induced Current ◽  
Axial Resolution ◽  
Two Photon ◽  
Optical Beam Induced Current

Abstract By implementing two-photon optical-beam-induced current microscopy using a solid-immersion lens, imaging inside a silicon flip chip is reported with 166nm lateral resolution and an axial resolution capable of resolving features only 100nm in height.

Optical-Beam-Induced-Current Analysis of Wear-Out Degradation in High-Reliability Fabry–Perot Laser Diodes for Access Networks

2008 ◽  
Vol 47 (6) ◽  
pp. 4523-4526 ◽  
Author(s):  
Tsuyoshi Ito ◽  
Tatsuya Takeshita ◽  
Mitsuru Sugo ◽  
Takeshi Kurosaki ◽  
Yuji Akatsu ◽  
...  
Keyword(s):  
High Reliability ◽  
Laser Diodes ◽  
Access Networks ◽  
Optical Beam ◽  
Induced Current ◽  
Current Analysis ◽  
Fabry Perot ◽  
Optical Beam Induced Current

Hot Spots In 4H Sic P+N Diodes Studied By The Optical Beam Induced Current Technique

1998 ◽  
Vol 512 ◽  
Author(s):  
M. Frischholz ◽  
K. Nordgren ◽  
K. Rottner ◽  
J. Seidel ◽  
A. Schöner ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Leakage Current ◽  
High Voltage ◽  
Hot Spots ◽  
Operating Conditions ◽  
Optical Beam ◽  
Reverse Bias Voltage ◽  
Induced Current ◽  
Reverse Leakage Current ◽  
Optical Beam Induced Current

ABSTRACTThe optical beam induced current (OBIC) technique allows a direct imaging of high voltage PN junctions at a microscopic level under reverse operating conditions by measuring the local variation of the photocurrent. In this paper we focus on the application of the UV-OBIC technique for failure analysis of 4H SiC high voltage P+N diodes.4H SiC P+N diodes with a 2-zone junction termination extension were used. The diodes were characterized in terms of reverse leakage current and breakdown voltage. Various devices were chosen for failure analysis on the base of early breakdown and/or excessive leakage current for OBIC measurements to study extrinsic failures. As a reference we selected diodes that blocked more than 2 kV with a leakage current density of typically less than 0.1 μA/cm2.OBIC measurements have been used to detect failures in devices that manifest themselves as peaks or “hot spots” in the photocurrent distribution. Early breakdown of diodes could be attributed to formation of hot spots in the periphery of the diodes. The appearance of a hot spot preceded any noticeable increase in reverse leakage current and is thus a very sensitive tool to identify defective diodes already at low voltage levels.The photocurrent generated by illumination of hot spots has been measured as a function of reverse bias voltage and the current multiplication factor has been determined.

Three-dimensional nanometric sub-surface imaging of a silicon flip-chip using the two-photon optical beam induced current method

2007 ◽  
Vol 47 (9-11) ◽  
pp. 1534-1538 ◽  
Author(s):  
E. Ramsay ◽  
K.A. Serrels ◽  
M.J. Thomson ◽  
A.J. Waddie ◽  
R.J. Warburton ◽  
...  
Keyword(s):  
Flip Chip ◽  
Three Dimensional ◽  
Current Method ◽  
Optical Beam ◽  
Surface Imaging ◽  
Induced Current ◽  
Two Photon ◽  
Optical Beam Induced Current
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