Using neutral metastable argon atoms and contamination lithography to form nanostructures in silicon, silicon dioxide, and gold

1997 ◽  
Author(s):  
Kent S. Johnson ◽  
Karl K. Berggren ◽  
Andrew J. Black ◽  
Charles T. Black ◽  
Arthur P. Chu ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Silicon

Carrier tunneling in nanocrystalline silicon–silicon dioxide superlattices: A weak coupling model

2004 ◽  
Vol 69 (23) ◽  
Author(s):  
B. V. Kamenev ◽  
G. F. Grom ◽  
D. J. Lockwood ◽  
J. P. McCafrey ◽  
B. Laikhtman ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Weak Coupling ◽  
Coupling Model ◽  
Nanocrystalline Silicon ◽  
Carrier Tunneling ◽  
Silicon Silicon

scholarly journals Deposition of gold nanoparticles from colloid on TiO2 surface

2017 ◽  
Vol 68 (6) ◽  
pp. 487-491
Author(s):  
Vlastimil Rehacek ◽  
Ivan Hotovy
Keyword(s):  
Gold Nanoparticles ◽  
Titanium Dioxide ◽  
Silicon Dioxide ◽  
Coupling Agent ◽  
Oxide Surface ◽  
Tio2 Surface ◽  
Metal Oxide Surface ◽  
Colloidal Gold Nanoparticles ◽  
Titanium Dioxide Surface ◽  
Silicon Silicon

AbstractIn this paper, experimental results are presented on the deposition of colloidal gold nanoparticles on the surfaces of TiO2prepared on silicon/silicon dioxide. Important procedures, such as titanium dioxide surface hydrophilization as well as functionalization by an organosilane coupling agent (3-aminopropyl) trimethoxysilane and (3-mercaptopropyl) trimethoxysilane were investigated in order to obtain a metal oxide surface with the most convenient properties for immobilization of gold nanoparticles having a dense and uniform distribution. TiO2nanotips prepared by reactive ion etching of oxide surface covered with self-mask gold nanoparticles are demonstrated.

Structural Modifications of nc-Si/SiO2 Superlattices by Localized Photo-induced Heating

2004 ◽  
Vol 832 ◽  
Author(s):  
B. V. Kamenev ◽  
H. Grebel ◽  
L. Tsybeskov ◽  
V. Yu. Timoshenko
Keyword(s):  
Silicon Dioxide ◽  
Laser Irradiation ◽  
High Intensity ◽  
Nanocrystalline Silicon ◽  
Structural Modifications ◽  
High Intensity Laser ◽  
Melting Threshold ◽  
Intensity Laser ◽  
Silicon Silicon ◽  
Pulsed Irradiation

ABSTRACTStructural modifications in nanocrystalline silicon-silicon dioxide (nc-Si/SiO2) superlattices (SL) under high intensity laser irradiation have been studied experimentally and theoretically. The melting threshold in nc-Si/SiO2 SLs was found in the range of 5–8 kW/cm2 for cw excitation by 514 nm line of Ar+ laser and ∼11–15 mJ/cm2 for pulsed irradiation by 248 nm, π∼20 ns KrF laser. The irradiation of the samples above the melting threshold induces the irreversible modification of nc-Si layers, which is controlled by the thickness of the separating SiO2 layers, and increases the PL intensity increases by more than 300%.

Neutron Damage Equivalence for Silicon, Silicon Dioxide, and Gallium Arsenide

1987 ◽  
Vol 34 (6) ◽  
pp. 1557-1563 ◽  
Author(s):  
Theodore F. Luera ◽  
John G. Kelly ◽  
Herman J. Stein ◽  
Maximo S. Lazo ◽  
Clarence E. Lee ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Silicon Dioxide ◽  
Neutron Damage ◽  
Silicon Silicon
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