Synchronized low coherence interferometry for in-situ and ex-situ metrology for semiconductor manufacturing

2005 ◽  
Author(s):  
Wojciech J. Walecki ◽  
Alexander Pravdivtsev ◽  
Kevin Lai ◽  
Manuel SantosII ◽  
Ann Koo
Keyword(s):  
Semiconductor Manufacturing ◽  
Ex Situ ◽  
Low Coherence ◽  
Low Coherence Interferometry

Novel Noncontact Thickness Metrology for Partially Transparent and Nontransparent Wafers for Backend Semiconductor Manufacturing

2004 ◽  
Vol 829 ◽  
Author(s):  
Wojciech J. Walecki ◽  
Vitali Souchkov ◽  
Kevin Lai ◽  
Phuc Van ◽  
Manuel Santos ◽  
...  
Keyword(s):  
Semiconductor Manufacturing ◽  
Rough Surfaces ◽  
Optical Interferometry ◽  
Smooth Surfaces ◽  
Low Coherence ◽  
Low Coherence Interferometry ◽  
Single Probe ◽  
Thin Semiconductor ◽  
Compound Materials

ABSTRACTSingle probe infrared low coherence optical interferometry has been proven to be an effective tool for characterization of thin and ultra-thin semiconductor Si and compound materials wafers. Its application was however limited to wafers transparent at probing wavelength, and having relatively smooth surfaces. Purpose of this paper is to present an extension of low coherence interferometry to characterization of non-transparent wafers, and wafers with rough surfaces.

scholarly journals From Light to Displacement: A Design Framework for Optimising Spectral-Domain Low-Coherence Interferometric Sensors for In Situ Measurement

2020 ◽  
Vol 10 (23) ◽  
pp. 8590
Author(s):  
Tom Hovell ◽  
Jon Petzing ◽  
Laura Justham ◽  
Peter Kinnell
Keyword(s):  
Spectral Domain ◽  
Design Framework ◽  
Object Surface ◽  
Low Coherence ◽  
Interferometric Sensors ◽  
Spectral Domain Oct ◽  
Low Coherence Interferometry ◽  
Definition Of ◽  
In Situ Metrology

Growing requirements for in situ metrology during manufacturing have led to an increased interest in optical coherence tomography (OCT) configurations of low coherence interferometry (LCI) for industrial domains. This paper investigates the optimisation of spectral domain OCT hardware and signal processing for such implementations. A collation of the underlying theory of OCT configured LCI systems from disparate sources linking the journey of the light reflected from the object surface to the definition of the measurand is presented. This is portrayed in an applicable, comprehensible design framework through its application to profilometry measurements for optimising system performance.

Fiber-optics Low-coherence Integrated Metrology for In-Situ Non-contact Characterization of Wafer Curvature for Wafers Having Non-uniform Substrate and Thin Film Thickness

2005 ◽  
Vol 875 ◽  
Author(s):  
Wojciech J. Walecki ◽  
Alexander Pravdivtsev ◽  
Kevin Lai ◽  
Manuel Santos ◽  
Georgy Mikhaylov ◽  
...  
Keyword(s):  
Thin Film ◽  
Construction Industry ◽  
Fiber Optics ◽  
Fiber Optic ◽  
Flat Panel ◽  
Thin Film Thickness ◽  
Low Coherence ◽  
Low Coherence Interferometry

Abstract. We propose novel stress metrology technique for measurement of local values stress tensor components in the coated wafers. New metrology is based on fiber-optic low coherence interferometry and can be applied to study stress not only in semicondiuctor wafers but in wide variety applications spanning from semiconductor to construction industry where measurements of plates covered by thin film encountered in flat panel displayes, solar cells, modern windows.

Differential low-coherence interferometry for in situ diagnostics of transparent structures

2004 ◽  
Vol 30 (5) ◽  
pp. 389-391 ◽  
Author(s):  
V. V. Ivanov ◽  
V. A. Markelov ◽  
M. A. Novikov ◽  
S. S. Ustavshchikov
Keyword(s):  
Low Coherence ◽  
Low Coherence Interferometry ◽  
In Situ Diagnostics

Etching Kinetics of (100) Single Crystal Diamond Surfaces in a Hydrogen Microwave Plasma, Studied with In Situ Low-Coherence Interferometry

2017 ◽  
Vol 214 (11) ◽  
pp. 1700177 ◽  
Author(s):  
Vladimir Yurov ◽  
Egor Bushuev ◽  
Andrey Bolshakov ◽  
Evgeny Ashkinazi ◽  
Irina Antonova ◽  
...  
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Diamond Surfaces ◽  
Low Coherence ◽  
Low Coherence Interferometry ◽  
Single Crystal Diamond ◽  
Kinetics Of

New Non-Contact Measurement of Small inside-Diameter Using Tandem Low-Coherence Interferometer and Optical Fiber Devices

2012 ◽  
Vol 523-524 ◽  
pp. 871-876 ◽  
Author(s):  
Kenta Matsui ◽  
Hirokazu Matsumoto ◽  
Satoru Takahashi ◽  
Kiyoshi Takamasu
Keyword(s):  
Optical Fiber ◽  
Small Scale ◽  
Low Coherence ◽  
Inside Diameter ◽  
Low Coherence Interferometry ◽  
Optical Fiber Devices ◽  
Fiber Devices ◽  
Measurement Principle ◽  
Manufacturing Techniques

Recently, manufacturing techniques of small-scale products have been improved. As a result, precise measurement is required of small inside diameters, for example, of engine nozzles. However, an in situ measurement and measurement system for small-sized products has yet to be fully established. In this research, a contactless technique to measure small inside diameters is proposed. This new method uses tandem low-coherence interferometry and an optical fiber cut at an angle of 45°. This optical fiber is up to 30 μm in diameter and is used as a probe. Our objective is to measure holes as small as 50-μm inside diameter with an accuracy of 100 nm. In the present paper, we report on the measurement principle, calculate the measurement uncertainty and show that experimental measurements can be obtained of small-size holes up to 300-μm inside diameter with an accuracy of 100 nm.

In situ detection of nuclear atypia in Barrett's esophagus by using angle-resolved low-coherence interferometry

2007 ◽  
Vol 65 (3) ◽  
pp. 487-491 ◽  
Author(s):  
John W. Pyhtila ◽  
Kevin J. Chalut ◽  
Jeffrey D. Boyer ◽  
Justin Keener ◽  
Thomas D'Amico ◽  
...  
Keyword(s):  
Barrett’S Esophagus ◽  
Barrett's Esophagus ◽  
Nuclear Atypia ◽  
Low Coherence ◽  
Low Coherence Interferometry ◽  
In Situ Detection

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

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