Comparison using surface evolution theory of the smoothing and figuring of optics by plasma-assisted chemical etching and ion milling

1992 ◽  
Author(s):  
Charles B. Zarowin
Keyword(s):  
Chemical Etching ◽  
Evolution Theory ◽  
Ion Milling ◽  
Surface Evolution

scholarly journals The Art of Tungsten Etching in Semiconductor Chips

1999 ◽  
Vol 7 (2) ◽  
pp. 24-25
Author(s):  
Lisa Litz-Montanaro
Keyword(s):  
Manufacturing Process ◽  
Chemical Etching ◽  
Layer By Layer ◽  
Ion Milling ◽  
Etching Technique ◽  
Semiconductor Structures ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Semiconductor Chips ◽  
Complex Semiconductor

In the course of both physical and failure analysis of semiconductor chips (i.e., verifying what you actually deposited as a layer, vs, what caused the circuit to fail), it is essential to have appropriate deprocessing tools at your disposal in order to evaluate complex semiconductor structures, Deprocessing techniques are developed for each product manufactured and involve multi-step procedures that reveal the layer-by-layer secrets of the chip, These techniques require constant tweaking in duration and procedure as the manufacturing process imposes changes and as the architecture of the semiconductor changes. While there are many tools that assist in these analytical pursuits, such as RIE (reactive ion etching - a dry etching technique), ion milling, and microcleaving, the wet chemical etching of tungsten is sometimes more reproducible than RIE techniques.

Use of ion milling to expose and highlight defects on cross-sectioned integrated circuits

1989 ◽  
Vol 47 ◽  
pp. 720-721
Author(s):  
K.H. Martinek ◽  
J.P. Benedict ◽  
S.J. Klepeis ◽  
T. Joseph ◽  
G. Vandygrift
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Chemical Etching ◽  
Initial Period ◽  
Sample Holder ◽  
Ion Milling ◽  
Block Method ◽  
Short Period ◽  
Circuit Defects ◽  
A Current

Polishing and cross-sectioning of integrated circuits is standard practice in failure analysis. With most integrated circuit defects, all that is usually needed is mechanical polishing to the cross-sectioned plane of interest. The sample is then ready for examination in the scanning electron microscope (SEM). However, some defects are too small or too subtle to be seen without delineating them in some way. Chemical etching is useful in many situations but sometimes does not highlight the defect and may introduce artifacts. In this experiment, cross-sectioned chips were ion milled for a short period to highlight or uncover defects.After locating failing transistors, samples were cross-sectioned on diamond paper using the open block method (i.e., not encapsulated in epoxy). A special ion mill sample holder was designed to accommodate the polishing fixture. This holder is inserted into the ion mill. (This eliminates the need to transfer the chip from one fixture to another, avoiding damage or contamination.) Samples were milled in a Gatan ion mill for an initial period of two minutes at a 20 degree tilt. A current of ˙5 mA and voltage of 5 kV were used. Samples were positioned so that maximum milling occurred in the area of the failing transistors.

High Voltage Electron Microscopy of Ion-Milled Dental Enamel

1974 ◽  
Vol 32 ◽  
pp. 60-61
Author(s):  
L. D. Ackerman ◽  
S. H. Y. Wei
Keyword(s):  
Electron Microscopy ◽  
High Voltage ◽  
Third Molar ◽  
Polarized Light ◽  
Dental Enamel ◽  
Longitudinal Section ◽  
Ion Milling ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
High Voltage Electron

Mature human dental enamel has presented investigators with several difficulties in ultramicrotomy of specimens for electron microscopy due to its high degree of mineralization. This study explores the possibility of combining ion-milling and high voltage electron microscopy as a means of circumventing the problems of ultramicrotomy.A longitudinal section of an extracted human third molar was ground to a thickness of about 30 um and polarized light micrographs were taken. The specimen was attached to a single hole grid and thinned by argon-ion bombardment at 15° incidence while rotating at 15 rpm. The beam current in each of two guns was 50 μA with an accelerating voltage of 4 kV. A 20 nm carbon coating was evaporated onto the specimen to prevent an electron charge from building up during electron microscopy.

Techniques for Transmission Electron Microscopy of Fiber-Matrix Interfaces in Aluminum Alloy-Boron Composites by Ion Erosio

1971 ◽  
Vol 29 ◽  
pp. 204-205
Author(s):  
G. G. Shaw
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Aluminum Alloy ◽  
Electron Beam ◽  
Pure Aluminum ◽  
Ion Milling ◽  
Transmission Electron ◽  
Fiber Matrix ◽  
Ion Erosion ◽  
Row Of Fibers

The morphology and composition of the fiber-matrix interface can best be studied by transmission electron microscopy and electron diffraction. For some composites satisfactory samples can be prepared by electropolishing. For others such as aluminum alloy-boron composites ion erosion is necessary.When one wishes to examine a specimen with the electron beam perpendicular to the fiber, preparation is as follows: A 1/8 in. disk is cut from the sample with a cylindrical tool by spark machining. Thin slices, 5 mils thick, containing one row of fibers, are then, spark-machined from the disk. After spark machining, the slice is carefully polished with diamond paste until the row of fibers is exposed on each side, as shown in Figure 1.In the case where examination is desired with the electron beam parallel to the fiber, preparation is as follows: Experimental composites are usually 50 mils or less in thickness so an auxiliary holder is necessary during ion milling and for easy transfer to the electron microscope. This holder is pure aluminum sheet, 3 mils thick.

Microtomy of spherical Al2O3 powders

1983 ◽  
Vol 41 ◽  
pp. 74-75
Author(s):  
E.J. Jenkins ◽  
D.S. Tucker ◽  
J.J. Hren
Keyword(s):  
Thin Film ◽  
Size Range ◽  
Particle Aggregation ◽  
Ion Milling ◽  
Thin Sections ◽  
Α Phase ◽  
Convenient Means ◽  
Van Der Waals Attraction ◽  
Negative Feature ◽  
Film Substrate

The size range of mineral and ceramic particles of one to a few microns is awkward to prepare for examination by TEM. Electrons can be transmitted through smaller particles directly and larger particles can be thinned by crushing and dispersion onto a substrate or by embedding in a film followed by ion milling. Attempts at dispersion onto a thin film substrate often result in particle aggregation by van der Waals attraction. In the present work we studied 1-10 μm diameter Al2O3 spheres which were transformed from the amprphous state to the stable α phase.After the appropriate heat treatment, the spherical powders were embedded in as high a density as practicable in a hard EPON, and then microtomed into thin sections. There are several advantages to this method. Obviously, this is a rapid and convenient means to study the microstructure of serial slices. EDS, ELS, and diffraction studies are also considerably more informative. Furthermore, confidence in sampling reliability is considerably enhanced. The major negative feature is some distortion of the microstructure inherent to the microtoming operation; however, this appears to have been surprisingly small. The details of the method and some typical results follow.

Comparative Microstructures of Ion Milled and Electrochemically Thinned Composite Materials

1974 ◽  
Vol 32 ◽  
pp. 546-547
Author(s):  
R.R. Russell
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Composite Materials ◽  
Great Difficulty ◽  
Ion Milling ◽  
Transmission Electron ◽  
Ion Damage ◽  
Intermetallic Composite

Transmission electron microscopy of metallic/intermetallic composite materials is most challenging since the microscopist typically has great difficulty preparing specimens with uniform electron thin areas in adjacent phases. The application of ion milling for thinning foils from such materials has been quite effective. Although composite specimens prepared by ion milling have yielded much microstructural information, this technique has some inherent drawbacks such as the possible generation of ion damage near sample surfaces.

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