In situ monitoring during ion-beam etching of multilayer dielectric gratings: simulation and experiment

2005 ◽  
Author(s):  
Hua Lin ◽  
Lifeng Li ◽  
Lijiang Zeng
Keyword(s):  
Ion Beam ◽  
In Situ Monitoring ◽  
Ion Beam Etching ◽  
Dielectric Gratings ◽  
Simulation And Experiment ◽  
Multilayer Dielectric

scholarly journals In-situ monitoring of etch by-products during reactive ion beam etching of GaAs in chlorine/argon

1997 ◽  
Author(s):  
J.W. Lee ◽  
S.J. Pearton ◽  
C.R. Abernathy ◽  
G.A. Vawter ◽  
R.J. Shul ◽  
...  
Keyword(s):  
Ion Beam ◽  
In Situ Monitoring ◽  
Ion Beam Etching ◽  
By Products ◽  
Reactive Ion Beam Etching

scholarly journals In-situ monitoring of ion-beam luminescence of Si–O–C(–H) ceramics under proton-beam irradiation

2015 ◽  
Vol 123 (1441) ◽  
pp. 805-808 ◽  
Author(s):  
Masaki NARISAWA ◽  
Masashi KOKA ◽  
Akinori TAKEYAMA ◽  
Masaki SUGIMOTO ◽  
Akira IDESAKI ◽  
...  
Keyword(s):  
Proton Beam ◽  
Ion Beam ◽  
In Situ Monitoring ◽  
Beam Irradiation ◽  
Proton Beam Irradiation

scholarly journals Ion beam etching for multilayer dielectric pulse compressor gratings with top layers of HfO2

2013 ◽  
Vol 62 (23) ◽  
pp. 234202
Author(s):  
Xu Xiang-Dong ◽  
Liu Ying ◽  
Qiu Ke-Qiang ◽  
Liu Zheng-Kun ◽  
Hong Yi-Lin ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
Pulse Compressor ◽  
Multilayer Dielectric

Ion Beam Etching of Biological Material in the Scanning Electron Microscope

1969 ◽  
Vol 27 ◽  
pp. 10-11
Author(s):  
Patrick Echlin ◽  
David Kynaston ◽  
Paul M. Knights
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Biological Material ◽  
Ion Beam ◽  
Ion Source ◽  
Ion Beam Etching ◽  
Dynamic Experiments ◽  
First Time ◽  
Scanning Electron

An ion source has been designed to operate in the chamber of the Stereoscan scanning electron microscope and provides facilities for etching specimens in situ. The source is a demountable cold cathode discharge type requiring only simple control.The ion beam described above has been used to progressively etch away hard or resilient biological material. This is the first time that ion beam etching of botanical specimens has been followed inside the scanning microscope, and marks the beginning of a range of dynamic experiments using this form of instrumentation.

FIB-Etching of Polymer/Metal Laminates and its Effect on Mechanical Performance

2014 ◽  
Vol 20 (6) ◽  
pp. 1826-1834
Author(s):  
Enne Faber ◽  
Willem P. Vellinga ◽  
Jeff T.M. De Hosson
Keyword(s):  
Mechanical Properties ◽  
Polyethylene Terephthalate ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Mechanical Performance ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Polymer Metal ◽  
The Impact

AbstractThis paper investigates the adhesive interface in a polymer/metal (polyethylene terephthalate/steel) laminate that is subjected to uniaxial strain. Cross-sections perpendicular to such interfaces were created with a focused ion beam and imaged with scanning electron microscopy during straining in the electron microscope. During in situ straining, glide steps formed by the steel caused traction at the interface and initiated crazes in the polyethylene terephthalate (PET). These crazes readily propagated along the free surface of the PET layer. Similar crazing has not been previously encountered in laminates that were pre-strained or in numerical calculations. The impact of focused ion beam treatments on mechanical properties of the polymer/metal laminate system was therefore investigated. It was found that mechanical properties such as toughness of PET are dramatically influenced by focused ion beam etching. It was also found that this change in mechanical properties has a different effect on the pre-strained and in situ strained samples.

In-Situ Monitoring of the Initial Growth of a-C:H Films by AES

1989 ◽  
Vol 153 ◽  
Author(s):  
K.G. Tschersich
Keyword(s):  
Film Growth ◽  
Surface Composition ◽  
Ion Beam ◽  
Sample Surface ◽  
Carbon Films ◽  
In Situ Monitoring ◽  
Initial Growth ◽  
Amorphous Hydrogenated Carbon ◽  
Beam Deposition

AbstractAmorphous hydrogenated carbon films are deposited by direct ion beam deposition onto Si and W substrates at room temperature. Simultaneously, the sample surface composition is measured by Auger electron spectroscopy. The results indicate a sharp interface between film and Si and the formation of a W2C layer between film and W. The in-situ measurements are compared with sputter depth profiles. It is found that the former ones give insight into film growth processes, that is unattainable by sputter profiling.

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