In-Situ Monitoring of the Initial Growth of a-C:H Films by AES

1989 ◽  
Vol 153 ◽  
Author(s):  
K.G. Tschersich
Keyword(s):  
Film Growth ◽  
Surface Composition ◽  
Ion Beam ◽  
Sample Surface ◽  
Carbon Films ◽  
In Situ Monitoring ◽  
Initial Growth ◽  
Amorphous Hydrogenated Carbon ◽  
Beam Deposition

AbstractAmorphous hydrogenated carbon films are deposited by direct ion beam deposition onto Si and W substrates at room temperature. Simultaneously, the sample surface composition is measured by Auger electron spectroscopy. The results indicate a sharp interface between film and Si and the formation of a W2C layer between film and W. The in-situ measurements are compared with sputter depth profiles. It is found that the former ones give insight into film growth processes, that is unattainable by sputter profiling.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

Epitaxy and Chemical Reactions During Thin Film Formation from Low Energy Ions New Kinetic Pathways, New Phases and New Properties

1991 ◽  
Vol 236 ◽  
Author(s):  
Nicole Herbots ◽  
O.C. Hellman ◽  
O. Vancauwenberghe
Keyword(s):  
Thin Film ◽  
Chemical Reactions ◽  
Degrees Of Freedom ◽  
Film Growth ◽  
Film Formation ◽  
Chemical Reactivity ◽  
Ion Beam ◽  
Low Energy ◽  
Low Energy Ions ◽  
Beam Deposition

AbstractThree important effects of low energy direct Ion Beam Deposition (IBD) are the athermal incorporation of material into a substrate, the enhancement of atomic mobility in the subsurface, and the modification of growth kinetics it creates. All lead to a significant lowering of the temperature necessary to induce epitaxial growth and chemical reactions. The fundamental understanding and new applications of low temperature kinetics induced by low energy ions in thin film growth and surface processing of semiconductors are reviewed. It is shown that the mechanism of IBD growth can be understood and computed quantitatively using a simple model including ion induced defect generation and sputtering, elastic recombination, thermal diffusion, chemical reactivity, and desorption The energy, temperature and dose dependence of growth rate, epitaxy, and chemical reaction during IBD is found to be controlled by the net recombination rate of interstitials at the surface in the case of epitaxy and unreacted films, and by the balance between ion beam decomposition and phase formation induced by ion beam generated defects in the case of compound thin films. Recent systematic experiments on the formation of oxides and nitrides on Si, Ge/Si(100), heteroepitaxial SixGe1−x/Si(100) and GaAs(100) illustrate applications of this mechanism using IBD in the form of Ion Beam Nitridation (IBN), Ion Beam Oxidation (IBO) and Combined Ion and Molecular beam Deposition (CIMD). It is shown that these techniques enable (1) the formation of conventional phases in conditions never used before, (2) the control and creation of properties via new degrees of freedom such as ion energy and lowered substrate temperatures, and (3) the formation of new metastable heterostructures that cannot be grown by pure thermal means.

Alloy surface composition resulting from fabrication, as determined by s.i.m.s. (secondary ion mass spectrometry)

1980 ◽  
Vol 295 (1413) ◽  
pp. 134-135
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Surface Composition ◽  
Ion Beam ◽  
Sample Surface ◽  
Beam Current ◽  
Ion Source ◽  
Beam Current Density ◽  
Dynamic Mode ◽  
Static Mode ◽  
Subsequent Performance

In s.i.m.s. the sample surface is ion bombarded and the emitted secondary ions are mass analysed. When used in the static mode with very low primary ion beam current densities (10 -11 A/mm 2 ), the technique analyses the outermost atomic layers with the following advantages (Benninghoven 1973, I975): the structural—chemical nature of the surface may be deduced from the masses of the ejected ionized clusters of atoms; detection of hydrogen and its compounds is possible; sensitivity is extremely high (10 -6 monolayer) for a number of elements. Composition profiles are obtained by increasing the primary beam current density (dynamic mode) or by combining the technique in the static mode with ion beam machining with a separate, more powerful ion source. The application of static s.i.m.s. in metallurgy has been explored by analysing a variety of alloy surfaces after fabrication procedures in relation to surface quality and subsequent performance. In a copper—silver eutectic alloy braze it was found that the composition of the solid surface depended markedly on its pretreatment. Generally there was a surface enrichment of copper relative to silver in melting processes while sawing and polishing enriched the surface in silver

The influence of substrate temperature during ion beam deposition on the diamond-like or graphitic nature of carbon films

1993 ◽  
Vol 2 (2-4) ◽  
pp. 285-290 ◽  
Author(s):  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
I. Avigal ◽  
C. Uzan-Saguy ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Carbon Films ◽  
Ion Beam Deposition ◽  
Influence Of Substrate ◽  
Beam Deposition

Growth of diamond and diamond-like films using a low energy ion beam

1998 ◽  
Vol 13 (8) ◽  
pp. 2315-2320 ◽  
Author(s):  
Y. P. Guo ◽  
K. L. Lam ◽  
K. M. Lui ◽  
R. W. M. Kwok ◽  
K. C. Hui
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Low Energy ◽  
Hydrogen Passivation ◽  
Heteroepitaxial Growth ◽  
Ion Beam Deposition ◽  
Additional Control ◽  
Strain Release ◽  
Beam Deposition

Ion beam deposition provides an additional control of ion beam energy over the chemical vapor deposition methods. We have used a low energy ion beam of hydrogen and carbon to deposit carbon films on Si(100) wafers. We found that graphitic films, amorphous carbon films, and oriented diamond microcrystallites could be obtained separatedly at different ion beam energies. The mechanism of the formation of the oriented diamond microcrystallites was suggested to include three components: strain release after ion bombardment, hydrogen passivation of sp3 carbon, and hydrogen etching. Such a process can be extended to the heteroepitaxial growth of diamond films.

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