ECR plasma and etch characterization of photoresist dry etch processes

1992 ◽  
Author(s):  
Kyoung Y. Cho ◽  
Dong W. Im
Keyword(s):  
Ecr Plasma ◽  
Dry Etch

scholarly journals Description and characterization of a ECR plasma device developed for thin film deposition

2003 ◽  
Vol 33 (1) ◽  
pp. 123-127 ◽  
Author(s):  
J.A.S. da Matta ◽  
R.M.O. Galvão ◽  
L. Ruchko ◽  
M.C.A. Fantini ◽  
P.K. Kiyohara
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Ecr Plasma ◽  
Plasma Device

Characterization of an integrated multibeam laser mask-pattern generation and dry etch processing total solution

2002 ◽  
Author(s):  
Alex H. Buxbaum ◽  
Melisa J. Buie ◽  
Brigitte C. Stoehr ◽  
Warren Montgomery ◽  
Scott E. Fuller
Keyword(s):  
Pattern Generation ◽  
Mask Pattern ◽  
Dry Etch

Characterization of CNx films prepared by twinned ECR plasma source enhanced DC magnetron sputtering

2001 ◽  
Vol 390 (1-2) ◽  
pp. 107-112 ◽  
Author(s):  
Jun Xu ◽  
Xinlu Deng ◽  
Jialiang Zhang ◽  
Wenqi Lu ◽  
Tengcai Ma
Keyword(s):  
Magnetron Sputtering ◽  
Plasma Source ◽  
Dc Magnetron Sputtering ◽  
Ecr Plasma ◽  
Cnx Films

Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques

2011 ◽  
Vol 483 ◽  
pp. 14-17
Author(s):  
Jian An Lv ◽  
Zhen Chuan Yang ◽  
Gui Zheng Yan ◽  
Yong Cai ◽  
Bao Shun Zhang ◽  
...  
Keyword(s):  
Residual Stress ◽  
Residual Stress Distribution ◽  
Bending Test ◽  
Output Current ◽  
Micro Raman Spectroscopy ◽  
Gan Hemt ◽  
Gan Hemts ◽  
Dry Etch ◽  
Mems Process

In this article, integrated AlGaN/GaN cantilevers on (111) silicon substrate are fabricated and characterized. The process started with AlGaN/GaN HEMTs fabrication followed by a series of dry-etch-only MEMS process. To characterize the residual stress distribution, Micro-Raman spectroscopy is used and the residual stress in suspended GaN cantilever is found ~ 90% lower after releasing. A type of micro-bending test is used to characterize the piezoresponse of AlGaN/GaN HEMT on the GaN cantilever. An output current modulation greater than 20% can be observed when the cantilever is vertically downward deflected ~ 30 µm.

Characterization of atomic oxygen from an ECR plasma source

2002 ◽  
Vol 11 (4) ◽  
pp. 361-367 ◽  
Author(s):  
M Naddaf ◽  
V N Bhoraskar ◽  
A B Mandale ◽  
S R Sainkar ◽  
S V Bhoraskar
Keyword(s):  
Atomic Oxygen ◽  
Plasma Source ◽  
Ecr Plasma

Characterization of the Post Dry Etch Cleaning of the Silicon Surface Prior to Silicon Epitaxial Growth

1998 ◽  
Vol 65-66 ◽  
pp. 97-100
Author(s):  
Y.B. Kim ◽  
Matty Caymax ◽  
H. Bender ◽  
Serge Vanhaelemeersch
Keyword(s):  
Epitaxial Growth ◽  
Silicon Surface ◽  
Dry Etch

Application of Ftir Spectroscopy to the Characterization of as-Deposited and Chemical Mechanical Polished (CMP) Electron Cyclotron Resonance (ECR) Plasma Based SiO2 Films

1993 ◽  
Vol 324 ◽  
Author(s):  
Mukesh Desai ◽  
Ron Carpio ◽  
Rahul Jairath ◽  
Matt Stell ◽  
Robert Tolles
Keyword(s):  
Ftir Spectroscopy ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Removal Rate ◽  
Electron Cyclotron ◽  
Sources Of Information ◽  
Ecr Plasma ◽  
Rate Information ◽  
Vibrational Bands

AbstractFTIR spectroscopy has been used to characterize as-deposited and chemical mechanical polished (CMP) electron cyclotron resonance (ECR) plasma based SiOx films. The ECR films were deposited at different O2/SiH4 gas ratios in an attempt to vary the film stochiometry. Transmission and reflectance-absorbance IR spectral data were combined with CMP removal rate information to characterize the SiOx films and their polishing behavior. The asymmetric O-Si-O stretching (ASM) and Si-OH vibrational bands were found to be principal sources of information.

Characterization of Diamond like Carbon film Fabricated by ECR Plasma CVD at room Temperature

1997 ◽  
Vol 504 ◽  
Author(s):  
K. Kuramoto ◽  
Y. Domoto ◽  
H. Hirano ◽  
H. Tarui ◽  
S. Kiyama
Keyword(s):  
Electron Cyclotron Resonance ◽  
Carbon Film ◽  
Chemical Vapor ◽  
High Hardness ◽  
Major Influence ◽  
Diamond Like Carbon ◽  
Ecr Plasma ◽  
High Electrical Resistivity ◽  
Film Hardness

ABSTRACTLow temperature (about 50°C) fabrication of diamond like carbon (DLC) films with a high hardness (>3000Hv) and a high electrical resistivity (>1011 Ωm) has been achieved.In order to obtain such a result, the effect of ion impingement on the growth and structural change of DLC films in an electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) method was investigated. It was confirmed that ion impingement was fundamentally required in the growth of DLC films. Furthermore, impingement with ions energized by bias voltages between 50V and 150V had a major influence on the sp 2/sp 3 configuration in DLC films. This configuration is found to be rather sensitive to optoelectronic properties but not so sensitive to film hardness.Additionally, this method could fabricate ultrathin DLC films that exhibited excellent wear resistance for protective applications.

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