Application of Ftir Spectroscopy to the Characterization of as-Deposited and Chemical Mechanical Polished (CMP) Electron Cyclotron Resonance (ECR) Plasma Based SiO2 Films

1993 ◽  
Vol 324 ◽  
Author(s):  
Mukesh Desai ◽  
Ron Carpio ◽  
Rahul Jairath ◽  
Matt Stell ◽  
Robert Tolles
Keyword(s):  
Ftir Spectroscopy ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Removal Rate ◽  
Electron Cyclotron ◽  
Sources Of Information ◽  
Ecr Plasma ◽  
Rate Information ◽  
Vibrational Bands

AbstractFTIR spectroscopy has been used to characterize as-deposited and chemical mechanical polished (CMP) electron cyclotron resonance (ECR) plasma based SiOx films. The ECR films were deposited at different O2/SiH4 gas ratios in an attempt to vary the film stochiometry. Transmission and reflectance-absorbance IR spectral data were combined with CMP removal rate information to characterize the SiOx films and their polishing behavior. The asymmetric O-Si-O stretching (ASM) and Si-OH vibrational bands were found to be principal sources of information.

Hydrogen in Dielectric Film Formation From an Electron Cyclotron Resonance Plasma

1991 ◽  
Vol 235 ◽  
Author(s):  
J. C. Barbour ◽  
H. J. Stein
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Film Formation ◽  
Ion Beam ◽  
Electron Cyclotron ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Ecr Plasma ◽  
The Stability

ABSTRACTThe incorporation of hydrogen into silicon nitride films grown downstream from an electron cyclotron resonance (ECR) plasma decreased rapidly with increasing substrate temperature (100–600°C). Fourier transform infra-red (FTIR) spectroscopy showed that the hydrogen in the as-grown material was primarily bonded to nitrogen. However, an applied bias of -200 V caused an increase in the number of Si-H bonds relative to N-H bonds, as a result of increased ion-beam damage. In addition, ion irradiation of an as-grown film with 175 keV Ar+ at room temperature showed that H transferred from N-H bonds to Si-H bonds without a loss of H. Elastic recoil detection (ERD) and FTIR of thermally annealed films showed that the stability of H incorporated during deposition increased with deposition temperature, and that the N-H bond was more stable than the Si-H bond above 700°C. Deuterium plasma treatments, at 600°C, of annealed films caused isotopic substitution with a conservation of bonds. Therefore, hydrogen loss from annealed films is apparently accompanied by a reduction in dangling bonds.

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