Low temperature metal deposition processes for optoelectronic devices

Author(s):  
Larry N. Lewis ◽  
Kevin H. Janora ◽  
Jie Liu ◽  
Shellie Gasaway ◽  
Eric P. Jacobson
2004 ◽  
Vol 224 (1-4) ◽  
pp. 36-40 ◽  
Author(s):  
H.M. Buschbeck ◽  
A. Erhart ◽  
Y. Goeggel ◽  
C. Rosenblad ◽  
S. Wiltsche ◽  
...  

2010 ◽  
Vol 199 (37-40) ◽  
pp. 2343-2359 ◽  
Author(s):  
Michele Chiumenti ◽  
Miguel Cervera ◽  
Alessandro Salmi ◽  
Carlos Agelet de Saracibar ◽  
Narges Dialami ◽  
...  

Author(s):  
Lie Tang ◽  
Jianzhong Ruan ◽  
Robert G. Landers ◽  
Frank Liou

This paper proposes a novel method, called Variable Powder Flow Rate Control (VPFRC), for the regulation of powder flow rate in laser metal deposition processes. The idea of VPFRC is to adjust the powder flow rate to maintain a uniform powder deposition per unit length even when disturbances occur (e.g., the motion system accelerates and decelerates). Dynamic models of the powder delivery system motor and the powder transport system (i.e., five–meter pipe, powder dispenser, and cladding head) are constructed. A general tracking controller is then designed to track variable powder flow rate references. Since the powder flow rate at the nozzle exit cannot be directly measured, it is estimated using the powder transport system model. The input to this model is the DC motor rotation speed, which is estimated on–line using a Kalman filter. Experiments are conducted to examine the performance of the proposed control methodology. The experimental results demonstrate that the VPFRC method is successful in maintaining a uniform track morphology, even when the motion system accelerates and decelerates.


ChemCatChem ◽  
2015 ◽  
Vol 7 (22) ◽  
pp. 3674-3682 ◽  
Author(s):  
Sam Kalirai ◽  
Ulrike Boesenberg ◽  
Gerald Falkenberg ◽  
Florian Meirer ◽  
Bert M. Weckhuysen

2009 ◽  
Vol 145-146 ◽  
pp. 177-180 ◽  
Author(s):  
Roger Loo ◽  
Andriy Hikavyy ◽  
Frederik E. Leys ◽  
Masayuki Wada ◽  
Kenichi Sano ◽  
...  

Several device concepts have been further evaluated after the successful implementation of epitaxial Si, SiGe and/or Si:C layers. Most of the next device generations will put limitations on the thermal budget of the deposition processes without making concessions on the epitaxial layer quality. In this work we address the impact of ex-situ wet chemical cleans and in-situ pre-epi bake steps, which are required to obtain oxide free Si surfaces for epitaxial growth. The combination of defect measurements, Secondary Ion Mass Spectroscopy, photoluminescence, lifetime measurements, and electrical diode characterization gives a very complete overview of the performance of low-temperature pre-epi cleaning methods. Contamination at the epi/substrate interface cannot be avoided if the pre-epi bake temperature is too low. This interface contamination is traceable by the photoluminescence and lifetime measurements. It may affect device characteristics by enhanced leakage currents and eventually by yield issues due to SiGe layer relaxation or other defect generation. A comparison of state of the art 200 mm and 300 mm process equipment indicates that for the same thermal budgets the lowest contamination levels are obtained for the 300 mm equipments.


2021 ◽  
Author(s):  
Yu Lei ◽  
Srimanta Pakhira ◽  
Kazunori Fujisawa ◽  
He Liu ◽  
Cynthia Guerrero-Bermea ◽  
...  

Author(s):  
Lie Tang ◽  
Jianzhong Ruan ◽  
Todd E. Sparks ◽  
Robert G. Landers ◽  
Frank Liou

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4046
Author(s):  
Guo-Dong Hao ◽  
Manabu Taniguchi ◽  
Shin-ichiro Inoue

Hexagonal boron nitride (h-BN) is an attractive wide-bandgap material for application to emitters and detectors operating in the deep ultraviolet (DUV) spectral region. The optical transmittance of h-BN in the DUV region is particularly important for these devices. We report on the deposition of thick h-BN films (>200 nm) on Al0.7Ga0.3N templates via radio-frequency sputtering, along with the realization of ultrahigh transmittance in the DUV region. The fraction of the gas mixture (Ar/N2) was varied to investigate its effects on the optical transmittance of BN. DUV light transmittance of as high as 94% was achieved at 265 nm. This value could be further enhanced to exceed 98% by a post-annealing treatment at 800 °C in a N2 ambient for 20 min. The phase of the highly DUV–transparent BN film was determined to be a purely hexagonal structure via Raman spectra measurements. More importantly, these deposition processes were performed at a low temperature (300 °C), which can provide protection from device performance degradation when applied to actual devices.


1996 ◽  
Vol 450 ◽  
Author(s):  
F. Aqariden ◽  
P. S. Wijew Arnasuriya ◽  
S. Rujirawat ◽  
S. Sivananthan

ABSTRACTThe results of arsenic incorporation in HgCdTe (MCT) layers grown by molecular beam epitaxy (MBE) are reported. The incorporation into MBE-MCT was carried out by a technique called planar doping. Arsenic was successfully incorporated during the MBE growth or after a low temperature anneal as acceptors. These results are very promising for in-situ fabrication of advanced optoelectronic devices using HgCdTe material.


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