Production-ready dry cleaning and deposition processes for low-temperature Si and SiGe epitaxy

2004 ◽  
Vol 224 (1-4) ◽  
pp. 36-40 ◽  
Author(s):  
H.M. Buschbeck ◽  
A. Erhart ◽  
Y. Goeggel ◽  
C. Rosenblad ◽  
S. Wiltsche ◽  
...  
Keyword(s):  
Low Temperature ◽  
Dry Cleaning ◽  
Deposition Processes

Low Temperature Pre-Epi Treatment: Critical Parameters to Control Interface Contamination

2009 ◽  
Vol 145-146 ◽  
pp. 177-180 ◽  
Author(s):  
Roger Loo ◽  
Andriy Hikavyy ◽  
Frederik E. Leys ◽  
Masayuki Wada ◽  
Kenichi Sano ◽  
...  
Keyword(s):  
Low Temperature ◽  
Sige Layer ◽  
Ex Situ ◽  
Critical Parameters ◽  
Process Equipment ◽  
Successful Implementation ◽  
Lifetime Measurements ◽  
Deposition Processes ◽  
Cleaning Methods ◽  
The Impact

Several device concepts have been further evaluated after the successful implementation of epitaxial Si, SiGe and/or Si:C layers. Most of the next device generations will put limitations on the thermal budget of the deposition processes without making concessions on the epitaxial layer quality. In this work we address the impact of ex-situ wet chemical cleans and in-situ pre-epi bake steps, which are required to obtain oxide free Si surfaces for epitaxial growth. The combination of defect measurements, Secondary Ion Mass Spectroscopy, photoluminescence, lifetime measurements, and electrical diode characterization gives a very complete overview of the performance of low-temperature pre-epi cleaning methods. Contamination at the epi/substrate interface cannot be avoided if the pre-epi bake temperature is too low. This interface contamination is traceable by the photoluminescence and lifetime measurements. It may affect device characteristics by enhanced leakage currents and eventually by yield issues due to SiGe layer relaxation or other defect generation. A comparison of state of the art 200 mm and 300 mm process equipment indicates that for the same thermal budgets the lowest contamination levels are obtained for the 300 mm equipments.

scholarly journals Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4046
Author(s):  
Guo-Dong Hao ◽  
Manabu Taniguchi ◽  
Shin-ichiro Inoue
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
Hexagonal Boron Nitride ◽  
Annealing Treatment ◽  
Optical Transmittance ◽  
Hexagonal Structure ◽  
Light Transmittance ◽  
Radio Frequency Sputtering ◽  
Deep Ultraviolet ◽  
Deposition Processes

Hexagonal boron nitride (h-BN) is an attractive wide-bandgap material for application to emitters and detectors operating in the deep ultraviolet (DUV) spectral region. The optical transmittance of h-BN in the DUV region is particularly important for these devices. We report on the deposition of thick h-BN films (>200 nm) on Al0.7Ga0.3N templates via radio-frequency sputtering, along with the realization of ultrahigh transmittance in the DUV region. The fraction of the gas mixture (Ar/N2) was varied to investigate its effects on the optical transmittance of BN. DUV light transmittance of as high as 94% was achieved at 265 nm. This value could be further enhanced to exceed 98% by a post-annealing treatment at 800 °C in a N2 ambient for 20 min. The phase of the highly DUV–transparent BN film was determined to be a purely hexagonal structure via Raman spectra measurements. More importantly, these deposition processes were performed at a low temperature (300 °C), which can provide protection from device performance degradation when applied to actual devices.

Multiscale structured low-temperature solid oxide fuel cells with 13 W power at 500 °C

2020 ◽  
Vol 13 (10) ◽  
pp. 3459-3468 ◽  
Author(s):  
Sung Soo Shin ◽  
Jeong Hun Kim ◽  
Kyung Taek Bae ◽  
Kang-Taek Lee ◽  
Sang Moon Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Fuel Cell ◽  
Low Temperature ◽  
Solid Oxide Fuel Cells ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Large Area ◽  
Deposition Processes

A multiscale architectured solid oxide fuel cell is demonstrated by applying a large-area ceramic micropatterning and thin-film deposition processes.

Low temperature metal deposition processes for optoelectronic devices

2004 ◽  
Author(s):  
Larry N. Lewis ◽  
Kevin H. Janora ◽  
Jie Liu ◽  
Shellie Gasaway ◽  
Eric P. Jacobson
Keyword(s):  
Low Temperature ◽  
Optoelectronic Devices ◽  
Metal Deposition ◽  
Deposition Processes

scholarly journals Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3733
Author(s):  
Jongwan Jung ◽  
Baegmo Son ◽  
Byungmin Kam ◽  
Yong Sang Joh ◽  
Woonyoung Jeong ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Ex Situ ◽  
High Quality ◽  
Reduced Pressure ◽  
Dry Cleaning ◽  
Gaseous Environment

The key process steps for growing high-quality Si-based epitaxial films via reduced pressure chemical vapor deposition (RPCVD) are investigated herein. The quality of the epitaxial films is largely affected by the following steps in the epitaxy process: ex-situ cleaning, in-situ bake, and loading conditions such as the temperature and gaseous environment. With respect to ex-situ cleaning, dry cleaning is found to be more effective than wet cleaning in 1:200 dilute hydrofluoric acid (DHF), while wet cleaning in 1:30 DHF is the least effective. However, the best results of all are obtained via a combination of wet and dry cleaning. With respect to in-situ hydrogen bake in the presence of H2 gas, the level of impurities is gradually decreased as the temperature increases from 700 °C to a maximum of 850 °C, at which no peaks of O and F are observed. Further, the addition of a hydrogen chloride (HCl) bake step after the H2 bake results in effective in-situ bake even at temperatures as low as 700 °C. In addition, the effects of temperature and environment (vacuum or gas) at the time of loading the wafers into the process chamber are compared. Better quality epitaxial films are obtained when the samples are loaded into the process chamber at low temperature in a gaseous environment. These results indicate that the epitaxial conditions must be carefully tuned and controlled in order to achieve high-quality epitaxial growth.

The Effect of Source Microstructure on the Close-Space Sublimation of CdTe Thin Films for Solar Cell Applications

1995 ◽  
Vol 410 ◽  
Author(s):  
D. Albin ◽  
D. Rose ◽  
A. Swartzlander ◽  
H. Moutinho ◽  
F. Hasoon ◽  
...  
Keyword(s):  
Grain Size ◽  
Low Temperature ◽  
Bare Glass ◽  
Preferential Formation ◽  
Glass Substrates ◽  
Close Space Sublimation ◽  
Texture Change ◽  
Cdte Films ◽  
Deposition Processes ◽  
Space Sublimation

ABSTRACTThe microstructure of CdTe sources grown on bare 7059 and SnO2-coated 7059 glass substrates used in the close-space sublimation (CSS) growth of CdTe films, is affected by nucleation conditions during their fabrication. For CdTe sources grown on bare glass substrates, denser source microstructures with smaller grains are promoted by low-temperature nucleation conditions. Growth rates of CdTe films deposited using these source plates are inversely proportional to the packing density of the grains. CdTe sources grown on glass undergo significant texture changes during their use in subsequent CSS deposition. CdTe sources grown on SnO2-coated glass substrates exhibit dense structures both with and without low-temperature nucleation and increased grain size with low-temperature nucleation. These source plates show less texture change associated with thermal annealing than their bare-glass counterparts, however, they are much more susceptible to CdO formation during subsequent CSS deposition processes in which oxygen is present. Source oxidation results in a decrease of the (111)/(220) x-ray diffraction intensity. Analysis of the (111)/(220) intensity ratio with and without source oxidation suggests the preferential formation of CdO on the (111) planes. In general, source oxidation appears to be a inversely proportional to the grain size of the source material.

scholarly journals Incorporation of Na in Low-Temperature Deposition of CIGS Flexible Solar Cells

2009 ◽  
Vol 1210 ◽  
Author(s):  
Hendrik Zachmann ◽  
Stefan Puttnins ◽  
Felix Daume ◽  
Andreas Rahm ◽  
Karsten Otte ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Deposition Process ◽  
Beneficial Effects ◽  
Roll To Roll ◽  
Multi Stage ◽  
Deposition Parameters ◽  
Temperature Deposition ◽  
Deposition Processes

AbstractDifferent methods for Na incorporation are known for the use of Na-free substrates like stainless steel or polyimide foil. In this work Cu(In,Ga)Se2 (CIGS) absorber layers with different amounts of Na are investigated. The CIGS samples were prepared via a roll-to-roll deposition process with ion beam assistance (Solarion) and by a multi-stage low temperature co-evaporation process (HZB). Na was either incorporated via in-situ co-evaporation of NaF (for roll-to-roll deposition) or by a Na-containing precursor (for multi-stage deposition). With increasing amounts of Na an increase of VOC is observed for both deposition tech-niques. In contrast, within the deposition parameters used, jSC decreases with increasing Na amount for co-evaporation of NaF while it seems unaffected when using a NaF precursor layer. The elemental depth profiles of the different CIGS thin films were studied via secondary ion mass spectroscopy and were found to depend strongly on the deposition technique. It seems that beneficial effects of the addition of Na are independent of the method of in-corporation, even if the distribution of Na in the CIGS layer is different due to different methods of incorporation and CIGS deposition processes.

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