Peculiarities of solid-phase silicon surface laser-induced damage in vacuum and in various gases

2002 ◽  
Author(s):  
Alexander F. Banishev ◽  
Vladimir S. Golubev ◽  
Alexei Y. Kremnev
Keyword(s):  
Silicon Surface ◽  
Solid Phase ◽  
Surface Laser ◽  
Laser Induced Damage

scholarly journals High surface laser-induced damage threshold of SrB4O7 single crystals under 266-nm (DUV) laser irradiation

2020 ◽  
Vol 28 (20) ◽  
pp. 29239
Author(s):  
Yasunori Tanaka ◽  
Ryota Murai ◽  
Yoshinori Takahashi ◽  
Tsuyoshi Sugita ◽  
Daisetsu Toh ◽  
...  
Keyword(s):  
Single Crystals ◽  
Laser Irradiation ◽  
High Surface ◽  
Damage Threshold ◽  
Surface Laser ◽  
Laser Induced Damage

Emission of particles by solid-phase laser-induced destruction of silicon surface

1999 ◽  
Author(s):  
Alexander F. Banishev ◽  
Vladimir S. Golubev ◽  
Alexei Y. Kremnev
Keyword(s):  
Silicon Surface ◽  
Solid Phase

scholarly journals Morphology of ejected debris from laser super-heated fused silica following exit surface laser-induced damage

2015 ◽  
Author(s):  
Stavros G. Demos ◽  
Raluca A. Negres ◽  
Rajesh N. Raman ◽  
Michael D. Feit ◽  
Kenneth R. Manes ◽  
...  
Keyword(s):  
Fused Silica ◽  
Exit Surface ◽  
Surface Laser ◽  
Laser Induced Damage

Polymer Hosts for Non-Linear Absorbing Materials

1994 ◽  
Vol 374 ◽  
Author(s):  
Stephen P McGeoch ◽  
Alan Christie ◽  
Gurmit S Bahra ◽  
Kevin R Welford
Keyword(s):  
Solid Phase ◽  
Damage Threshold ◽  
Host Material ◽  
Absorbing Materials ◽  
Non Linear ◽  
Laser Induced Damage

AbstractThere is a recognised requirement for solid-phase, non-linear absorbing devices. We present data for a range of non-linear absorbing dyes in polymer hosts. We identify polycarbonate as a useful host material. We recognise that progress will be required to increase the laser-induced damage threshold of the dyed polymers if practical devices are to be realised.

Near-field optical microscopy: application to investigation of surface laser-induced damage of transparent optical materials

1998 ◽  
Author(s):  
Vitali E. Gruzdev ◽  
Mikhail N. Libenson ◽  
George A. Martsinovsky ◽  
Michael A. Paesler ◽  
M. J. Soileau ◽  
...  
Keyword(s):  
Optical Microscopy ◽  
Optical Materials ◽  
Near Field ◽  
Surface Laser ◽  
Laser Induced Damage

Formation of interfacial iron silicides on the oxidized silicon surface during solid-phase epitaxy

2007 ◽  
Vol 52 (12) ◽  
pp. 1586-1591 ◽  
Author(s):  
A. S. Voronchikhin ◽  
M. V. Gomoyunova ◽  
D. E. Malygin ◽  
I. I. Pronin
Keyword(s):  
Silicon Surface ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Iron Silicides

Effect of Buried Surface Structure on Solid Phase Epitaxy of GE on SI (111)-7×7

1993 ◽  
Vol 317 ◽  
Author(s):  
Olof C. Hellman
Keyword(s):  
Thin Film ◽  
Surface Structure ◽  
Surface Reconstruction ◽  
Silicon Surface ◽  
Room Temperature ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Rich Phase ◽  
One Dimensional ◽  
Surface Steps

ABSTRACTWe study the crystallization of a thin film of amorphous Ge deposited at room temperature on Si (111). Features of the silicon surface buried beneath the Ge film are shown to affect the rate of crystallization. In particular, solid phase epitaxy is observed to be enhanced at surface steps and defects in the surface reconstruction. It is further shown that one-dimensional crystallization patterns can be caused by impurity-Mediated crystallization. Precipitates of an impurity rich phase migrate in the plane of the film, leaving behind a crystalline trail. The Migration path of these precipitates is also dependent on the buried surface structure.

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