Basic processes accompanying solid‐phase reactions on the silicon surface

1996 ◽  
Vol 79 (5) ◽  
pp. 2369-2375 ◽  
Author(s):  
A. G. Italyantsev
2002 ◽  
Author(s):  
Alexander F. Banishev ◽  
Vladimir S. Golubev ◽  
Alexei Y. Kremnev

1997 ◽  
Vol 42 (11) ◽  
pp. 1270-1274
Author(s):  
A. I. Baranov ◽  
N. I. Boyarkina ◽  
A. V. Vasil’ev

2004 ◽  
Vol 461 (1) ◽  
pp. 81-85 ◽  
Author(s):  
C.H Yu ◽  
Y.L Chueh ◽  
S.W Lee ◽  
S.L Cheng ◽  
L.J Chen ◽  
...  

2021 ◽  
pp. 2150469
Author(s):  
T. G. Naghiyev ◽  
R. M. Rzayev

The solid solutions of [Formula: see text] were synthesized by solid-phase reactions from powder components of CaS, BaS, and Ga2S3. The temperature-concentration dependences of the Gibbs free energy of formation of [Formula: see text] solid solutions from ternary compounds and phase diagrams of the CaGa2S4–BaGa2S4 were determined by a calculation method. It was revealed that continuous solid solutions are formed in these systems. The spinodal decomposition of [Formula: see text] solid solutions into two phases is predicted at ordinary temperatures.


1996 ◽  
Vol 35 (Part 1, No. 7) ◽  
pp. 4027-4033 ◽  
Author(s):  
Mayumi Takeyama ◽  
Atsushi Noya ◽  
Kouichirou Sakanishi ◽  
Hikaru Seki ◽  
Katsutaka Sasaki

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