Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches

2002 ◽  
Author(s):  
J. David Benson ◽  
Andrew J. Stoltz, Jr. ◽  
Andrew W. Kaleczyc ◽  
Mike Martinka ◽  
Leo A. Almeida ◽  
...  
Keyword(s):  
Ecr Plasma ◽  
Feature Geometry

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering

2014 ◽  
Vol E97.C (5) ◽  
pp. 413-418 ◽  
Author(s):  
Dae-Hee HAN ◽  
Shun-ichiro OHMI ◽  
Tomoyuki SUWA ◽  
Philippe GAUBERT ◽  
Tadahiro OHMI
Keyword(s):  
Surface Roughness ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Ecr Plasma ◽  
Plasma Sputtering

Probing pure and mixed neon ECR plasma—An effort for understanding the mechanism of isotope anomaly and gas mixing effect

2021 ◽  
Vol 28 (3) ◽  
pp. 033508
Author(s):  
Puneeta Tripathi ◽  
Shushant Kumar Singh ◽  
Pravin Kumar
Keyword(s):  
Gas Mixing ◽  
Mixing Effect ◽  
Ecr Plasma

Measurements of Microwave Power Absorbed during ECR Plasma Heating at the L-2M Stellarator

2019 ◽  
Vol 45 (11) ◽  
pp. 1059-1065
Author(s):  
S. E. Grebenshchikov ◽  
N. K. Kharchev ◽  
D. G. Vasilkov
Keyword(s):  
Microwave Power ◽  
Plasma Heating ◽  
Ecr Plasma

Mechanistic approach to the plasma polymerization of acrylic acid by a pulsed MW(ECR) plasma

1998 ◽  
Vol 98 (1-3) ◽  
pp. 875-878 ◽  
Author(s):  
J. Behnisch ◽  
F. Mehdorn ◽  
A. Holländer ◽  
H. Zimmermann
Keyword(s):  
Acrylic Acid ◽  
Plasma Polymerization ◽  
Ecr Plasma ◽  
Mechanistic Approach

Lead phthalocyanine films deposited by ECR plasma-induced sublimation

2012 ◽  
Vol 45 (30) ◽  
pp. 305202 ◽  
Author(s):  
V Sh Aliev ◽  
I A Badmaeva ◽  
L D Pokrovsky
Keyword(s):  
Ecr Plasma

DC Bias Effects on Growth of a-Ge:H in Coaxial-Type ECR Plasma

1989 ◽  
Vol 28 (Part 1, No. 5) ◽  
pp. 849-855 ◽  
Author(s):  
Takeshi Aoki ◽  
Seiichi Kato ◽  
Masataka Hirose ◽  
Yasuo Nishikawa
Keyword(s):  
Ecr Plasma ◽  
Dc Bias
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