Modeling of the carrier mobility at the silicon oxynitride-silicon interface

2001 ◽  
Author(s):  
Kazimierz J. Plucinski
Keyword(s):  
Carrier Mobility ◽  
Silicon Oxynitride ◽  
Silicon Interface

Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability

2005 ◽  
Vol 87 (26) ◽  
pp. 262902 ◽  
Author(s):  
M. A. Quevedo-Lopez ◽  
S. A. Krishnan ◽  
P. D. Kirsch ◽  
G. Pant ◽  
B. E. Gnade ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Gate Dielectrics ◽  
Silicon Oxynitride

Silicon oxynitride and silicon oxynitride-silicon interface: a photoemission study

1989 ◽  
Vol 36 (12) ◽  
pp. 2821-2824 ◽  
Author(s):  
C. Coluzza ◽  
C. Gianetti ◽  
G. Fortunato ◽  
P. Perfetti ◽  
C. Quaresima ◽  
...  
Keyword(s):  
Silicon Oxynitride ◽  
Photoemission Study ◽  
Silicon Interface

scholarly journals PECVD Silicon Oxynitride as Insulator for MDMO-PPV Thin-Film Transistors

2010 ◽  
Vol 5 (2) ◽  
pp. 116-124
Author(s):  
Marco R. Cavallari ◽  
Katia F. Albertin ◽  
Gerson Dos Santos ◽  
Carlos A. S. Ramos ◽  
Inés Pereyra ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Bulk Heterojunction ◽  
Charge Carrier Mobility ◽  
Silicon Oxynitride ◽  
Organic Thin Film ◽  
Light Emitting ◽  
Heterojunction Solar Cells ◽  
Wide Range

We demonstrate that PECVD SiOxNy with good dielectric properties can replace thermally grown SiO2 in Organic Thin-Film Transistors (OTFT) applications. It can be used on ITO-covered glass or even flexible substrates. Poly [2-methoxy-5-(3’,7’-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) is used as the active layer, due to its wide range of applications such as bulk heterojunction solar cells, light-emitting diodes and light-emitting transistors.We show that charge carrier mobility can be at least two times higher for MDMO-PPV on silicon oxynitride than silicon dioxide, μh 1.1x10-4 cm2/Vs. MDMO-PPV spun from solvents such as chloroform and toluene provide comparable TFT performance on SiOxNy. Preliminary studies of devices with hexamethyldisilazane-treated SiO2 demonstrate that performance can be further improved by the choice of a proper surface treatment.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

The Influence of Nitrogen Position on Charge Carrier Mobility in Enantiopure Aza[6]helicene Crystals

2018 ◽  
Author(s):  
Francesco Salerno ◽  
Beth Rice ◽  
Julia Schmidt ◽  
Matthew J. Fuchter ◽  
Jenny Nelson ◽  
...  
Keyword(s):  
Solid State ◽  
Charge Carrier ◽  
Carrier Mobility ◽  
Chemical Structure ◽  
Crystal Packing ◽  
Charge Carrier Mobility ◽  
Individual Factor ◽  
Charge Mobility ◽  
Order Of Magnitude ◽  
Small Change

<p>The properties of an organic semiconductor are dependent on both the chemical structure of the molecule involved, and how it is arranged in the solid-state. It is challenging to extract the influence of each individual factor, as small changes in the molecular structure often dramatically change the crystal packing and hence solid-state structure. Here, we use calculations to explore the influence of the nitrogen position on the charge mobility of a chiral organic molecule when the crystal packing is kept constant. The transfer integrals for a series of enantiopure aza[6]helicene crystals sharing the same packing were analysed in order to identify the best supramolecular motifs to promote charge carrier mobility. The regioisomers considered differ only in the positioning of the nitrogen atom in the aromatic scaffold. The simulations showed that even this small change in the chemical structure has a strong effect on the charge transport in the crystal, leading to differences in charge mobility of up to one order of magnitude. Some aza[6]helicene isomers that were packed interlocked with each other showed high HOMO-HOMO integrals (up to 70 meV), whilst molecules arranged with translational symmetry generally afforded the highest LUMO-LUMO integrals (40 - 70 meV). As many of the results are not intuitively obvious, a computational approach provides additional insight into the design of new semiconducting organic materials.</p>

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