Silicon oxynitride and silicon oxynitride-silicon interface: a photoemission study

1989 ◽  
Vol 36 (12) ◽  
pp. 2821-2824 ◽  
Author(s):  
C. Coluzza ◽  
C. Gianetti ◽  
G. Fortunato ◽  
P. Perfetti ◽  
C. Quaresima ◽  
...  
Keyword(s):  
Silicon Oxynitride ◽  
Photoemission Study ◽  
Silicon Interface

Photoemission Study of Interfacial Oxidation in ZrO2/subnanometer SiONx/Si(100) Stacked Structures

2002 ◽  
Vol 747 ◽  
Author(s):  
Seiichi Miyazaki ◽  
Hiroki Yamashita ◽  
Hiroshi Nakagawa ◽  
Masanori Yamaoka
Keyword(s):  
Nitrogen Content ◽  
Oxide Layer ◽  
Barrier Layer ◽  
Oxide Thickness ◽  
Silicon Oxynitride ◽  
Experimental Fact ◽  
Nitrogen Incorporation ◽  
Ft Ir ◽  
Photoemission Study ◽  
Interfacial Oxidation

ABSTRACTFor staked structures consisting of evaporated ZrO2 and ∼0.6nm-thick silicon oxynitride formed on Si(100), the blocking capability of the silicon oxynitride against oxidation in dry-O2 anneal at 500°C has been studied as a function of nitrogen content in the barrier layer in the range within ∼11at.%. With increasing nitrogen content, the interfacial oxide thickness is decreased linearly and, to suppress the growth of the interfacial oxide layer within two monolayers, a nitrogen content of ∼10at.% is necessary. Observed efficient blocking against oxidation, even for the case with a nitrogen content as small as ∼6at.%, is attributable to the improved homogeneity in the Si-O-Si bonding features at the interface by nitrogen incorporation of a few at.%, which is suggested from the experimental fact that the bandwidth of LO phonons near the interface due to the nitrogen incorporation is decreased as obtained by FT-IR-ATR measurements.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Photoemission study on the valence bands of DMe-DCNQI derived charge-transfer salts

1991 ◽  
Vol 1 (9) ◽  
pp. 1347-1354 ◽  
Author(s):  
D. Schmeißer ◽  
A. Gonzales ◽  
J. U. von Schütz ◽  
H. Wachtel ◽  
H. C. Wolf
Keyword(s):  
Charge Transfer ◽  
Charge Transfer Salts ◽  
Valence Bands ◽  
Photoemission Study

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures

2013 ◽  
Vol E96.C (5) ◽  
pp. 680-685 ◽  
Author(s):  
Akio OHTA ◽  
Katsunori MAKIHARA ◽  
Seiichi MIYAZAKI ◽  
Masao SAKURABA ◽  
Junichi MUROTA
Keyword(s):  
X Ray ◽  
Photoemission Study
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