Photovoltaic response in poly(3-octylthiophene)-based metal-semiconductor-metal diodes

2001 ◽  
Author(s):  
Emmanouil Kymakis ◽  
Gehan A. J. Amaratunga ◽  
Ioannis Alexandrou ◽  
Manish Chhowalla ◽  
William I. Milne
Keyword(s):  
Photovoltaic Response ◽  
Metal Semiconductor Metal

CHARACTERIZATION OF AN AlGaAs/GaAs METAL-SEMICONDUCTOR-METAL PHOTODETECTOR

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-325-C4-328
Author(s):  
M. ZIRNGIBL ◽  
R. SACHOT ◽  
M. ILEGEMS
Keyword(s):  
Metal Semiconductor Metal

CuO nanowire-based metal semiconductor metal infrared photodetector

2021 ◽  
Vol 127 (5) ◽  
Author(s):  
Menuvolu Tetseo ◽  
Prasenjit Deb ◽  
Sudem Daimary ◽  
Jay Chandra Dhar
Keyword(s):  
Infrared Photodetector ◽  
Metal Semiconductor Metal ◽  
Cuo Nanowire

scholarly journals Monolayer Twisted Graphene-Based Schottky Transistor

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4109
Author(s):  
Ramin Ahmadi ◽  
Mohammad Taghi Ahmadi ◽  
Seyed Saeid Rahimian Koloor ◽  
Michal Petrů
Keyword(s):  
Dispersion Relation ◽  
Quantum Tunneling ◽  
Research Study ◽  
Channel Length ◽  
New Class ◽  
Metal Semiconductor Metal ◽  
The Relationship ◽  
Graphene Structures ◽  
Twisted Graphene ◽  
Device Technology

The outstanding properties of graphene-based components, such as twisted graphene, motivates nanoelectronic researchers to focus on their applications in device technology. Twisted graphene as a new class of graphene structures is investigated in the platform of transistor application in this research study. Therefore, its geometry effect on Schottky transistor operation is analyzed and the relationship between the diameter of twist and number of twists are explored. A metal–semiconductor–metal twisted graphene-based junction as a Schottky transistor is considered. By employing the dispersion relation and quantum tunneling the variation of transistor performance under channel length, the diameter of twisted graphene, and the number of twists deviation are studied. The results show that twisted graphene with a smaller diameter affects the efficiency of twisted graphene-based Schottky transistors. Additionally, as another main characteristic, the ID-VGS is explored, which indicates that the threshold voltage is increased by diameter and number of twists in this type of transistor.

Perspective metal-semiconductor-metal (Mo/p-CdTe/Mo) structure for switching elements

2020 ◽  
Author(s):  
A.N. Drozdov ◽  
G.S. Khrypunov ◽  
V.O. Nikitin ◽  
A.V. Meriuts ◽  
M.G. Khrypunov ◽  
...  
Keyword(s):  
Metal Semiconductor Metal

Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors

2018 ◽  
Vol 123 (16) ◽  
pp. 161551 ◽  
Author(s):  
S. Walde ◽  
M. Brendel ◽  
U. Zeimer ◽  
F. Brunner ◽  
S. Hagedorn ◽  
...  
Keyword(s):  
Threading Dislocations ◽  
Metal Semiconductor Metal ◽  
Open Core

Plasmonic effect–enhanced Ag nanodisk incorporated ZnO/Si metal–semiconductor–metal photodetectors

2016 ◽  
Vol 6 (4) ◽  
pp. 042508 ◽  
Author(s):  
Manjeet Kumar ◽  
Hossein Shokri Kojori ◽  
Sung Jin Kim ◽  
Hyeong-Ho Park ◽  
Joondong Kim ◽  
...  
Keyword(s):  
Plasmonic Effect ◽  
Metal Semiconductor Metal

scholarly journals A wide-bandgap metal–semiconductor–metal nanostructure made entirely from graphene

2012 ◽  
Vol 9 (1) ◽  
pp. 49-54 ◽  
Author(s):  
J. Hicks ◽  
A. Tejeda ◽  
A. Taleb-Ibrahimi ◽  
M. S. Nevius ◽  
F. Wang ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Metal Semiconductor Metal ◽  
Metal Nanostructure

AlGaN Metal–Semiconductor–Metal Photodetectors on Planar and Epitaxial Laterally Overgrown AlN/Sapphire Templates for the Ultraviolet C Spectral Region

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JF03 ◽  
Author(s):  
Andrea Knigge ◽  
Moritz Brendel ◽  
Frank Brunner ◽  
Sven Einfeldt ◽  
Arne Knauer ◽  
...  
Keyword(s):  
Spectral Region ◽  
Metal Semiconductor Metal ◽  
Ultraviolet C
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