Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors

2018 ◽  
Vol 123 (16) ◽  
pp. 161551 ◽  
Author(s):  
S. Walde ◽  
M. Brendel ◽  
U. Zeimer ◽  
F. Brunner ◽  
S. Hagedorn ◽  
...  
Keyword(s):  
Threading Dislocations ◽  
Metal Semiconductor Metal ◽  
Open Core

scholarly journals Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

2014 ◽  
Vol 116 (5) ◽  
pp. 053104 ◽  
Author(s):  
Michael Moseley ◽  
Andrew Allerman ◽  
Mary Crawford ◽  
Jonathan J. Wierer ◽  
Michael Smith ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Electrical Current ◽  
Threading Dislocations ◽  
Current Leakage ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes ◽  
Open Core

Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors

2011 ◽  
Vol 98 (1) ◽  
pp. 011108 ◽  
Author(s):  
Dabing Li ◽  
Xiaojuan Sun ◽  
Hang Song ◽  
Zhiming Li ◽  
Yiren Chen ◽  
...  
Keyword(s):  
Threading Dislocations ◽  
Metal Semiconductor Metal ◽  
Ultraviolet Photodetectors

Anisotropy of interfacial defects in the initial stage of MOVPE GaAs growth On Si

1990 ◽  
Vol 48 (4) ◽  
pp. 592-593
Author(s):  
C. Vannuffel ◽  
C. Schiller ◽  
J. P. Chevalier
Keyword(s):  
Early Stage ◽  
Threading Dislocations ◽  
Mbe Growth ◽  
Detailed Mechanism ◽  
Si Substrates ◽  
Initial Stage ◽  
Interfacial Defects ◽  
Interfacial Dislocations ◽  
Step Growth ◽  
Essential Problem

Recently, interest has focused on the epitaxy of GaAs on Si as a promising material for electronic applications, potentially for integration of optoelectronic devices on silicon wafers. The essential problem concerns the 4% misfit between the two materials, and this must be accommodated by a network of interfacial dislocations with the lowest number of threading dislocations. It is thus important to understand the detailed mechanism of the formation of this network, in order to eventually reduce the dislocation density at the top of the layers.MOVPE growth is carried out on slightly misoriented, (3.5°) from (001) towards , Si substrates. Here we report on the effect of this misorientation on the interfacial defects, at a very early stage of growth. Only the first stage, of the well-known two step growth process, is thus considered. Previously, we showed that full substrate coverage occured for GaAs thicknesses of 5 nm in contrast to MBE growth, where substantially greater thicknesses are required.

CHARACTERIZATION OF AN AlGaAs/GaAs METAL-SEMICONDUCTOR-METAL PHOTODETECTOR

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-325-C4-328
Author(s):  
M. ZIRNGIBL ◽  
R. SACHOT ◽  
M. ILEGEMS
Keyword(s):  
Metal Semiconductor Metal

OPEN CORE DATA PROJECT: INTEGRATING PHYSICAL SAMPLES INTO THE WEB OF DATA

2017 ◽  
Author(s):  
Stephen Richard ◽  
◽  
Douglas Fils ◽  
Anders Noren ◽  
Kerstin A. Lehnert
Keyword(s):  
Core Data ◽  
Web Of Data ◽  
Open Core ◽  
The Web

Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method

2019 ◽  
Vol 58 (5) ◽  
pp. 050918 ◽  
Author(s):  
Takeaki Hamachi ◽  
Tetsuya Tohei ◽  
Masayuki Imanishi ◽  
Yusuke Mori ◽  
Akira Sakai
Keyword(s):  
Single Crystals ◽  
Threading Dislocations ◽  
Flux Method ◽  
Current Leakage ◽  
Local Current ◽  
Bulk Single Crystals

Misfit and threading dislocations in HgCdTe epitaxy

1986 ◽  
Vol 4 (4) ◽  
pp. 2200-2204 ◽  
Author(s):  
Andrei Szilagyi ◽  
Michael N. Grimbergen
Keyword(s):  
Threading Dislocations

CuO nanowire-based metal semiconductor metal infrared photodetector

2021 ◽  
Vol 127 (5) ◽  
Author(s):  
Menuvolu Tetseo ◽  
Prasenjit Deb ◽  
Sudem Daimary ◽  
Jay Chandra Dhar
Keyword(s):  
Infrared Photodetector ◽  
Metal Semiconductor Metal ◽  
Cuo Nanowire
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