scholarly journals A wide-bandgap metal–semiconductor–metal nanostructure made entirely from graphene

2012 ◽  
Vol 9 (1) ◽  
pp. 49-54 ◽  
Author(s):  
J. Hicks ◽  
A. Tejeda ◽  
A. Taleb-Ibrahimi ◽  
M. S. Nevius ◽  
F. Wang ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Metal Semiconductor Metal ◽  
Metal Nanostructure

Deep Ultraviolet Photodetector Based on Sulphur-Doped Cubic Boron Nitride Thin Film

2016 ◽  
Vol 879 ◽  
pp. 1117-1122 ◽  
Author(s):  
Yu Bo Li ◽  
Jian Wei Zhong ◽  
Li Ming Zhou ◽  
Chao Lun Sun ◽  
Xiao Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Wide Bandgap ◽  
Blind Detection ◽  
Ultraviolet Photodetector ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
Deep Ultraviolet ◽  
Uv Response

Cubic boron nitride (c-BN) is a wide bandgap III-V compound semiconductor potentially useful for solar-blind photodetectors. This paper describes work on the use of Sulphur doping to adjust the bandgap of c-BN films prepared by plasma-enhanced chemical vapor deposition (PECVD). An S-doped c-BN film based metal-semiconductor-metal (MSM) solar-blind ultraviolet (SBUV) photodetector was successfully fabricated and its electro-optical properties were characterized. The photocurrent shows peak responsivity at 254nm with sharp cutoff wavelengths at 220 and 300 nm, respectively, which is appropriate for use in solar-blind detection. The maximum response reached 1.55×10-7 A/W/cm2 with a rejection ratio of more than three orders of magnitude. The high solar-blind region UV response could be attributed to the successful substitution of boron by Sulphur and the suppression of B vacancies. The experimental results show the same peak in response at around 254nm as is found in the theoretical analysis.

Structural aspects of silicon diffusion in quaternary III-V thin-film semiconductors

1991 ◽  
Vol 49 ◽  
pp. 850-851
Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson
Keyword(s):  
Semiconductor Lasers ◽  
Wide Bandgap ◽  
Semiconductor Diode ◽  
Visible Range ◽  
P System ◽  
Misfit Dislocations ◽  
Lattice Match ◽  
Semiconductor Diode Laser ◽  
Thin Film Semiconductors ◽  
Silicon Diffusion

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

CHARACTERIZATION OF AN AlGaAs/GaAs METAL-SEMICONDUCTOR-METAL PHOTODETECTOR

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-325-C4-328
Author(s):  
M. ZIRNGIBL ◽  
R. SACHOT ◽  
M. ILEGEMS
Keyword(s):  
Metal Semiconductor Metal

2D/3D Perovskite Heterostructures for High Performance and High Open Circuit Voltage in Wide-Bandgap Perovskite Photovoltaics

2019 ◽  
Author(s):  
Ulrich W. Paetzold ◽  
Saba Gharibzadeh ◽  
Marius Jackoby ◽  
Tobias Abzieher ◽  
Somayeh Moghadamzadeh ◽  
...  
Keyword(s):  
High Performance ◽  
Open Circuit Voltage ◽  
Wide Bandgap ◽  
Open Circuit

Organic Tandem Solar Cells with 15% Efficiency Employing Novel Wide Bandgap Nonfullerene Acceptor

2019 ◽  
Author(s):  
Yuliar Firdaus ◽  
Thomas D. Anthopoulos ◽  
Yuanbao Lin ◽  
Ferry Anggoro Ardy Nugroho ◽  
Emre Yengel ◽  
...  
Keyword(s):  
Solar Cells ◽  
Wide Bandgap ◽  
Tandem Solar Cells ◽  
Nonfullerene Acceptor

Wide-bandgap bipolar material with high thermal stability

2019 ◽  
pp. 903
Author(s):  
Sheng-Chieh Lin ◽  
Yu-Chieh Cheng ◽  
Man-Kit Leung ◽  
Jiun-Haw Lee ◽  
Tien-Lung Chiu
Keyword(s):  
Thermal Stability ◽  
Wide Bandgap ◽  
High Thermal Stability
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