CHARACTERIZATION OF AN AlGaAs/GaAs METAL-SEMICONDUCTOR-METAL PHOTODETECTOR

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-325-C4-328
Author(s):  
M. ZIRNGIBL ◽  
R. SACHOT ◽  
M. ILEGEMS
Keyword(s):  
Metal Semiconductor Metal

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

Characterization of Dynamic Behaviour of Metal-Semiconductor-Metal Photodetectors by Correlation Technique

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 844-847 ◽  
Author(s):  
Markus Sickmöller ◽  
Peter Urbach ◽  
Wolfgang Kowalsky
Keyword(s):  
Dynamic Behaviour ◽  
Correlation Technique ◽  
Metal Semiconductor Metal

Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360nm: Photoemission assessments

2008 ◽  
Vol 92 (2) ◽  
pp. 022108 ◽  
Author(s):  
A. BenMoussa ◽  
J. F. Hochedez ◽  
R. Dahal ◽  
J. Li ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Spectral Range ◽  
Metal Semiconductor Metal

scholarly journals Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor

PLoS ONE ◽  
2016 ◽  
Vol 11 (1) ◽  
pp. e0145423 ◽  
Author(s):  
Hassan Maktuff Jaber Al-Ta’ii ◽  
Vengadesh Periasamy ◽  
Yusoff Mohd Amin
Keyword(s):  
Radiation Sensor ◽  
Metal Semiconductor Metal

Characterization of picosecond GaAs metal-semiconductor-metal photodetectors

1991 ◽  
Author(s):  
Josef Rosenzweig ◽  
C. Moglestue ◽  
A. Axmann ◽  
Joachim Schneider ◽  
Axel Huelsmann ◽  
...  
Keyword(s):  
Metal Semiconductor Metal

scholarly journals Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 795
Author(s):  
Soumava Ghosh ◽  
Kuan-Chih Lin ◽  
Cheng-Hsun Tsai ◽  
Harshvardhan Kumar ◽  
Qimiao Chen ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Collection Efficiency ◽  
Short Wave ◽  
Carrier Generation ◽  
Optical Components ◽  
Metal Semiconductor Metal ◽  
Wide Range ◽  
Short Wave Infrared ◽  
Planar Fabrication

Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of the planar fabrication technique. In this article, we present the design, growth, and characterization of GeSn MSM PDs that are suitable for photonic integrated circuits. The introduction of 4% Sn in the GeSn active region also reduces the direct bandgap and shows a redshift in the optical responsivity spectra, which can extend up to 1800 nm wavelength, which means it can cover the entire telecommunication bands. The spectral responsivity increases with an increase in bias voltage caused by the high electric field, which enhances the carrier generation rate and the carrier collection efficiency. Therefore, the GeSn MSM PDs can be a suitable device for a wide range of short-wave infrared (SWIR) applications.

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