Polarization-dependent optical gain characteristics of delta-strained quantum wells for semiconductor optical amplifiers

2000 ◽  
Author(s):  
Yongsang Cho ◽  
Woo-Young Choi
Keyword(s):  
Quantum Wells ◽  
Optical Amplifiers ◽  
Optical Gain ◽  
Semiconductor Optical Amplifiers ◽  
Strained Quantum Wells

scholarly journals Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers

2021 ◽  
Vol 11 (23) ◽  
pp. 11096
Author(s):  
Joan Manel Ramírez ◽  
Pierre Fanneau de la Horie ◽  
Jean-Guy Provost ◽  
Stéphane Malhouitre ◽  
Delphine Néel ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Networks ◽  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Optical Amplifier ◽  
Silicon On Insulator ◽  
Total Power ◽  
Multiple Quantum ◽  
Total Power Consumption ◽  
On Chip

Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint of 0.5 mm2, a lasing current threshold of 10 mA, a selectable wavelength tuning range of 50 nm centered at λ = 1549 nm, a fiber-coupled output power of 10 mW, and a laser linewidth of ν = 259 KHz. The SOA provides an on-chip gain of 18 dB/mm. The total power consumption of the co-integrated devices remains below 0.5 W even for the most power demanding lasing wavelengths. Apart from the above-mentioned applications, the co-integration of compact widely tunable III-V/Si lasers with on-chip SOAs provides a step forward towards the development of highly efficient, portable, and low power systems for wavelength division multiplexed passive optical networks (WDM-PONs).

Reduced crosstalk semiconductor optical amplifiers based on Type-II quantum wells

2002 ◽  
Vol 14 (3) ◽  
pp. 278-280 ◽  
Author(s):  
J.B. Khurgin ◽  
I. Vurgraftman ◽  
J.R. Meyer ◽  
Shuangmei Xu ◽  
J.U. Kang
Keyword(s):  
Quantum Wells ◽  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Type Ii ◽  
Type Ii Quantum Wells

scholarly journals Valence hole subbands and optical gain spectra of GaN/Ga1−xAlxN strained quantum wells

1996 ◽  
Vol 80 (6) ◽  
pp. 3471-3478 ◽  
Author(s):  
W. J. Fan ◽  
M. F. Li ◽  
T. C. Chong ◽  
J. B. Xia
Keyword(s):  
Quantum Wells ◽  
Optical Gain ◽  
Strained Quantum Wells ◽  
Gain Spectra

Band structure and optical gain of InGaAsN/GaAsP/GaAs strained quantum wells

2005 ◽  
Vol 2 (8) ◽  
pp. 3023-3026
Author(s):  
H. Carrère ◽  
X. Marie ◽  
J. Barrau ◽  
T. Amand
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Optical Gain ◽  
Strained Quantum Wells
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